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Infineon Technologies CY7C1354C-200BGXCT
- Part No.:
- CY7C1354C-200BGXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
CY7C1354C-200BGXCT.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,110
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Product details
Overview
CY7C1354C-200BGXCT from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in network switches and packet buffers. It operates at 200 MHz with zero wait states, supports 3.3 V core supply and 2.5/3.3 V I/O, and delivers 3.2 ns clock-to-output access time.
For engineers reviewing the CY7C1354C-200BGXCT datasheet, CY7C1354C-200BGXCT pinout, CY7C1354C-200BGXCT application, or CY7C1354C-200BGXCT equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select granularity (BWa–BWd), synchronous self-timed write timing, and 119-ball BGA package compatibility with ZBT-pin-compatible systems.
Technical Context
The device implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. Internal NoBL™ logic eliminates bus latency by enabling true back-to-back read/write cycles without wait states.
Burst capability supports both linear and interleaved orders via the MODE strap pin; synchronous self-timed writes use on-chip timing control independent of external OE assertion; tristate control is managed synchronously during write data phases and asynchronously via OE for output enable/disable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 organization), enabling full-word parallel access for 36-bit data paths. |
| Max Clock Frequency | 200 MHz - defines maximum sustained transaction rate for continuous burst transfers. |
| Access Time (tAC) | 3.2 ns - determines minimum clock-to-valid-data delay for synchronous read operations. |
| VDD Supply | 3.3 V ± 0.3 V - powers core logic and internal registers; requires stable low-noise regulation. |
| VDDQ Supply | 2.5 V or 3.3 V - independently powers I/O buffers, allowing mixed-voltage system interfacing. |
| Burst Order Control | MODE pin strapping - HIGH = interleaved, LOW = linear; sets address increment pattern for burst reads/writes. |
| Byte Write Selects | BWa–BWd (active LOW) - enables independent 9-bit write masking per DQ group (DQa/DQPa through DQd/DQPd). |
Pinout & Package
Package: 119-ball BGA (14 × 22 × 2.4 mm), RoHS-compliant, ball pitch 1.0 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Synchronous edge-trigger for all register captures; qualified by CEN; defines timing reference for all pipelined operations. |
| CEN | Clock enable | Active LOW gate for CLK recognition; suspends operation without deselecting device, extending previous cycle duration. |
| CE1, CE3 | Chip enable (active LOW) | Combined with CE2 (active HIGH) to form 3-signal chip select; enables bank-level addressing in multi-SRAM systems. |
| ADV/LD | Address advance/load | HIGH advances internal burst counter; LOW loads new address - controls sequential vs. random access behavior. |
| BWa–BWd | Byte write selects | Per-byte (9-bit) write enable signals; each controls one DQ/DQP pair, enabling partial-word writes without read-modify-write. |
| MODE | Burst order configuration | Strap pin determining linear (LOW) or interleaved (HIGH) burst address sequence - critical for cache line alignment. |
| ZZ | Deep sleep mode | Active LOW entry into low-power standby (≤40 mA CMOS standby current); retains memory contents. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables unlimited consecutive read/write operations with zero wait states - eliminates pipeline stalls in high-speed packet buffering. |
| Fully registered I/O | All inputs and outputs synchronized to CLK rising edge - ensures deterministic timing closure in FPGA/ASIC interfaces. |
| Synchronous self-timed writes | On-chip write timing control eliminates external write pulse width constraints - simplifies timing margining in 200 MHz designs. |
| IEEE 1149.1 JTAG boundary scan | Supports production test and board-level debug without additional test points - reduces manufacturing test cost and complexity. |
| Flexible I/O voltage (VDDQ) | 2.5 V or 3.3 V selectable - allows direct interfacing with both legacy 3.3 V and modern low-voltage 2.5 V logic families. |
Applications
| Network Packet Buffer | High-Speed Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payload fragments in Layer 2/3 switches. IC Role / Device Role / Timing Role: Primary burst-access SRAM providing zero-latency read/write turnaround for wire-speed forwarding decisions. Use Value: 200 MHz clock rate and NoBL™ architecture sustain 400 MT/s effective throughput - matching 10-Gbps Ethernet line rates with minimal buffer depth. |
Use Scenario: Holding temporary cell/packet data during crossbar arbitration in modular chassis switches. IC Role / Device Role / Timing Role: Pipelined memory node in distributed switch fabric, synchronized to central clock domain. Use Value: Fully registered interface ensures setup/hold compliance across 119-ball BGA trace lengths up to 8 inches on multilayer backplanes. |
| Telecom Line Card Buffer | Test Equipment Pattern Memory |
|
Use Scenario: Buffering ATM or SONET frame segments in OC-48/192 line interface cards. IC Role / Device Role / Timing Role: Burst-mode SRAM supporting interleaved address sequences aligned to cell-based traffic patterns. Use Value: MODE pin selection of interleaved burst order matches standard telecom framing structures - reducing address generation logic overhead. |
Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Deterministic-access memory delivering repeatable 3.2 ns tAC for sub-nanosecond timing verification. Use Value: Synchronous self-timed writes eliminate external write strobe generation - simplifying ATE timing controller design and improving vector density. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 10 ns access time, 100 MHz max frequency, 512K × 18 organization, 100-pin TQFP only | Limited to lower-bandwidth telecom control planes; lacks ZZ sleep mode and JTAG scan | Select when cost-sensitive, non-burst-intensive control memory is required and 100-pin TQFP footprint is fixed. |
| ISSI IS61WV102436B | 150 MHz max, 3.3 V only (no VDDQ flexibility), no MODE-controlled burst order, 165-ball FBGA | Suitable for simpler burst-linear-only systems; incompatible with interleaved burst protocols | Choose when VDDQ voltage flexibility and IEEE 1149.1 testability are not required, and FBGA layout already exists. |
Compared with IDT72V2115L10PF and IS61WV102436B, CY7C1354C-200BGXCT uniquely combines 200 MHz operation, dual-VDDQ support, programmable burst order, and JTAG testability - making it optimal for next-generation packet-processing hardware requiring both performance and production test coverage.
Availability
CY7C1354C-200BGXCT is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, and telecom line card applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1354C-200BGXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1354C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory subsystems in networking infrastructure where deterministic burst throughput and pin compatibility with ZBT standards are mandatory.
FAQ
What is the function of the MODE pin on CY7C1354C-200BGXCT?
The MODE pin is a static configuration input that selects burst address order: pulled HIGH for interleaved burst (e.g., 0x0000 → 0x0002 → 0x0001 → 0x0003), or LOW for linear burst (e.g., 0x0000 → 0x0001 → 0x0002 → 0x0003). It must be set before initialization and held stable during operation; no dynamic switching is supported.
Does CY7C1354C-200BGXCT support 2.5 V I/O while operating at 3.3 V core voltage?
Yes - VDD is fixed at 3.3 V for core logic, while VDDQ is independently configurable for 2.5 V or 3.3 V. This allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, provided VDDQ decoupling meets Cypress's 2.5 V AC noise specification (±50 mV).
How does the ZZ (sleep) mode reduce power consumption?
In ZZ mode (pin driven LOW), the device enters deep standby with CMOS standby current limited to 40 mA maximum, while retaining full memory content. Clock and control inputs are ignored except for ZZ deassertion; recovery time to active operation is ≤100 ns after ZZ returns HIGH.
Is the 119-ball BGA package of CY7C1354C-200BGXCT pin-compatible with ZBT SRAMs?
Yes - CY7C1354C-200BGXCT is explicitly designed as pin-compatible and functionally equivalent to industry-standard ZBT SRAMs. Ball assignments for CLK, CEN, CE1–CE3, ADV/LD, BWa–BWd, and DQ/DQP groups match ZBT-100/119 layouts, enabling drop-in replacement in validated ZBT designs.
CY7C1354C-200BGXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, ZBT
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
CY7C1354C-200BGXCT FAQ
1.How can I place an order for CY7C1354C-200BGXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1354C-200BGXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1354C-200BGXCT reliable?
The price and inventory of CY7C1354C-200BGXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354C-200BGXCT is usually 5 days.
3.What payment methods are accepted for CY7C1354C-200BGXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354C-200BGXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1354C-200BGXCT?
CY7C1354C-200BGXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1354C-200BGXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1354C-200BGXCT?
For technical support, including CY7C1354C-200BGXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354C-200BGXCT requirements.
6.How does Aetrix verify that CY7C1354C-200BGXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1354C-200BGXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354C-200BGXCT meets industry standards.
7.What is the process for return or replacement of CY7C1354C-200BGXCT?
All CY7C1354C-200BGXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354C-200BGXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1354C-200BGXCT part is unused and in its original packaging.
Return procedure for CY7C1354C-200BGXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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