My Inquiry
My Account
Infineon Technologies CY7C1354CV25-166AXCT
- Part No.:
- CY7C1354CV25-166AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1354CV25-166AXCT.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,783
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1354CV25-166AXCT from Infineon Technologies (formerly Cypress) is a 2.5 V, 256K × 36 pipelined synchronous SRAM with NoBL™ architecture, supporting zero-wait-state 166 MHz bus operation, 3.5 ns maximum access time, and synchronous self-timed writes. It serves as high-throughput data buffer in network packet processors requiring back-to-back read/write transitions.
For engineers reviewing the CY7C1354CV25-166AXCT datasheet, CY7C1354CV25-166AXCT pinout, CY7C1354CV25-166AXCT application, or CY7C1354CV25-166AXCT equivalent, key selection criteria include burst mode support (linear/interleaved), byte write capability (BWa–BWd), ZZ sleep mode, JTAG boundary scan compliance, and TQFP-100 packaging for PCB layout compatibility.
Technical Context
This SRAM implements fully registered I/O with rising-edge clock synchronization for both address/data inputs and outputs, enabling deterministic pipelined timing. Its NoBL™ logic eliminates bus latency by allowing consecutive read/write operations without wait states.
The device integrates synchronous self-timed write control, three chip enables (CE1–CE3), asynchronous OE, clock enable (CEN), and ADV/LD for burst address generation. It supports IEEE 1149.1 JTAG boundary scan and offers ZZ sleep mode with stop-clock option for power management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 configuration) |
| Operating Voltage | Single 2.5 V supply (VDD), with separate VDDQ for I/O to support mixed-voltage interfaces |
| Max Clock Frequency | 166 MHz - enables sustained 166 MT/s throughput with no wait states |
| Access Time | 3.5 ns - defines worst-case clock-to-output delay under 166 MHz operation |
| Power Consumption | 180 mA max operating current; 40 mA max CMOS standby current - critical for thermal budgeting in dense memory subsystems |
| Burst Capability | Linear or interleaved burst order - matches CPU/cache controller addressing patterns for efficient prefetch |
| Package | Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) - standard footprint with validated thermal and signal integrity performance |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm body, 1.4 mm height, Pb-free finish. Pin pitch: 0.5 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Primary clock input | Rising-edge-triggered master timing reference for all synchronous operations |
| CEN | Clock enable | Active-low input that suspends internal clock domain while preserving state - reduces dynamic power during idle cycles |
| CE1, CE2, CE3 | Chip enable inputs | Three-level synchronous bank select; all must be active for device access - enables multi-SRAM memory mapping |
| WE | Write enable | Controls write initiation in conjunction with BWx signals - determines whether data is latched into memory array |
| BWa–BWd | Byte write selects | Four independent 9-bit write masks for 36-bit data bus - allows partial-word updates without read-modify-write overhead |
| ADV/LD | Address valid/load | Qualifies burst address increment or loads new starting address - essential for sequential burst transfers |
| ZZ | Deep sleep control | Active-low entry into low-power ZZ mode (ISB ≤ 40 µA) - halts all internal activity except wake-up detection |
| DQa–DQd | Data I/O buses | Four 9-bit bidirectional data groups (36-bit total); each group has dedicated DQP parity pins for error detection |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables true back-to-back read/write operations on every clock cycle - eliminates pipeline stalls in high-bandwidth data paths |
| Fully registered I/O | All inputs and outputs pass through clocked registers - ensures precise setup/hold timing and simplifies FPGA/ASIC interface design |
| Synchronous self-timed writes | Internal write completion detection eliminates external write acknowledge timing constraints - streamlines control logic |
| JTAG boundary scan (IEEE 1149.1) | Supports production test and board-level debug without additional test points - reduces manufacturing test cost and complexity |
| ZZ sleep mode with stop-clock option | Reduces standby current to ≤40 µA while retaining address/data state - extends battery life in portable telecom infrastructure |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payload fragments in 10G/25G Ethernet switch ASICs. IC Role / Device Role / Timing Role: High-speed dual-port buffer between MAC and traffic manager, operating at 166 MHz with zero wait states. Use Value: Sustained 5.98 Gbps (166 MT/s × 36-bit) throughput prevents packet loss during bursty traffic peaks. |
Use Scenario: Frame buffering in carrier-grade SDH/SONET add-drop multiplexers with strict jitter tolerance. IC Role / Device Role / Timing Role: Synchronous pipeline stage synchronizing asynchronous line-side and system-side clocks. Use Value: Fully registered I/O and 3.5 ns access time ensure sub-100 ps clock-to-output jitter for phase-aligned data transfer. |
| Baseband Processing Cache | Radar Signal Processing FIFO |
|
Use Scenario: L2 cache for LTE/5G baseband processors handling real-time channel estimation and precoding. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed via burst reads/writes aligned to OFDM symbol boundaries. Use Value: Linear burst mode and ADV/LD control reduce address overhead by 75% vs. random access - accelerating FFT/IFFT pipelines. |
Use Scenario: Real-time ADC sample buffering in phased-array radar front-ends with pulse-Doppler processing. IC Role / Device Role / Timing Role: First-in-first-out memory staging digitized RF samples before DSP engine ingestion. Use Value: Byte write capability (BWa–BWd) enables selective update of metadata fields without disturbing active sample buffers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V255L15PF | 3.3 V supply, 15 ns access time, 133 MHz max frequency, 256K × 36 organization | Lacks ZZ sleep mode and JTAG scan; requires level-shifting for 2.5 V systems | Choose when legacy 3.3 V infrastructure exists and ultra-low standby power is not required. |
| ISSI IS61WV25636BLL-166TQLI | 2.5 V supply, 166 MHz, 256K × 36, but uses traditional ZBT™ architecture (not NoBL™) | Requires external OE control and lacks ADV/LD burst control - increases controller logic complexity | Prefer only if existing ZBT™ firmware and PCB layout are fixed and NoBL™ latency advantage is unnecessary. |
Compared with IDT72V255L15PF and IS61WV25636BLL-166TQLI, the CY7C1354CV25-166AXCT delivers lower latency via NoBL™ architecture and tighter power control via ZZ mode - making it optimal for next-generation telecom and radar systems where deterministic timing and microamp-level sleep current matter.
Availability
CY7C1354CV25-166AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache requiring stable component supply across extended product lifecycles.
Supply support for CY7C1354CV25-166AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including legacy SRAMs designed for demanding communications infrastructure.
This device belongs to Cypress' NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput buffering in packet-switched networks and real-time signal processing systems.
FAQ
Is CY7C1354CV25-166AXCT pin-compatible with ZBT™ SRAMs?
Yes - it is pin-compatible and functionally equivalent to ZBT™ devices per the datasheet. The 100-pin TQFP footprint matches industry-standard ZBT™ layouts, and all control signals (CE, WE, OE, CLK) align electrically and temporally. However, NoBL™ eliminates the need for asynchronous OE control, simplifying timing closure.
What is the role of the ADV/LD pin in burst operations?
The ADV/LD pin controls burst address generation: when asserted, it increments the internal burst counter; when deasserted, it loads a new starting address from the address bus. This enables seamless switching between linear bursts (e.g., cache line fills) and random-access reloads without controller intervention.
Does this SRAM support parity checking?
Yes - it provides four dedicated parity output pins (DQPa–DQPd), one per 9-bit data byte group. Parity is generated internally on writes and checked on reads, supporting single-bit error detection in mission-critical telecom and radar applications per system-level safety requirements.
How does ZZ sleep mode interact with CEN and clock stopping?
ZZ mode overrides CEN: when ZZ is asserted, the device enters deep sleep regardless of CEN state, disabling all internal clocks and reducing current to ≤40 µA. Clock stopping via CEN alone retains register state and consumes higher standby current (~40 mA); ZZ mode is required for ultra-low-power retention.
CY7C1354CV25-166AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1354CV25-166AXCT FAQ
1.How can I place an order for CY7C1354CV25-166AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1354CV25-166AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1354CV25-166AXCT reliable?
The price and inventory of CY7C1354CV25-166AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354CV25-166AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1354CV25-166AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354CV25-166AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1354CV25-166AXCT?
CY7C1354CV25-166AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1354CV25-166AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1354CV25-166AXCT?
For technical support, including CY7C1354CV25-166AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354CV25-166AXCT requirements.
6.How does Aetrix verify that CY7C1354CV25-166AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1354CV25-166AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354CV25-166AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1354CV25-166AXCT?
All CY7C1354CV25-166AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354CV25-166AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1354CV25-166AXCT part is unused and in its original packaging.
Return procedure for CY7C1354CV25-166AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1354CV25-166AXCT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
