Infineon Technologies CY7C1354CV25-166BZCT

Overview

CY7C1354CV25-166BZCT from Infineon Technologies (formerly Cypress) is a 2.5 V, 256K × 36 pipelined synchronous SRAM with NoBL™ architecture, supporting zero-wait-state 166 MHz bus operation, 3.5 ns maximum access time, and synchronous self-timed writes. It serves as high-throughput buffer memory in network packet processors requiring back-to-back read/write transitions.

For engineers reviewing the CY7C1354CV25-166BZCT datasheet, CY7C1354CV25-166BZCT pinout, CY7C1354CV25-166BZCT application, or CY7C1354CV25-166BZCT equivalent, key selection criteria include burst order support (linear/interleaved), byte-write capability across four 9-bit groups, IEEE 1149.1 JTAG boundary scan compliance, and 100-pin TQFP package compatibility with ZBT™-pin-compatible systems.

Technical Context

The device implements fully registered inputs and outputs synchronized to the rising edge of CLK, with internal self-timed output buffer control eliminating asynchronous OE dependency. Three chip enables (CE1–CE3) and clock enable (CEN) provide hierarchical bank and cycle control.

Burst logic supports both linear and interleaved address sequences, while write coherency is maintained via on-chip registry and data steering. Sleep mode (ZZ) and stop-clock operation reduce standby current to 40 mA without compromising state retention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pipelined SRAM applications.

Compared with IDT72V2115L16PF and AS7C3256A-16JIN, CY7C1354CV25-166BZCT uniquely delivers 256K × 36 density with integrated parity, NoBL™ zero-wait-state operation, and 100-pin TQFP compatibility-making it optimal for high-integrity, high-throughput data path buffering where timing determinism and error detection are mandatory.

Availability

CY7C1354CV25-166BZCT is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, baseband signal processors, and radar acquisition systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1354CV25-166BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and long-term supply commitment for legacy Cypress memory devices.

This part belongs to the NoBL™ SRAM product line, engineered specifically for high-speed, low-latency data buffering in communications infrastructure where deterministic timing and burst efficiency are critical.

FAQ

What is the function of the MODE pin on CY7C1354CV25-166BZCT?

The MODE pin selects burst address sequence behavior at power-up: logic high configures interleaved burst order, while logic low selects linear burst order. This setting is latched internally and remains fixed until reset or power cycle. It directly affects how ADV/LD increments addresses during burst reads/writes and must match the controller's expected pattern to avoid data misalignment.

Does CY7C1354CV25-166BZCT support asynchronous output enable (OE)?

Yes, but OE operates asynchronously only to tri-state outputs; it does not gate data output timing. The device uses internally self-timed output buffer control, so data appears synchronously on the rising clock edge regardless of OE state. OE is used solely for bus contention avoidance during write cycles and does not affect access time or clock-to-output delay specifications.

Can CY7C1354CV25-166BZCT be operated at 200 MHz?

No. This specific speed grade is rated for 166 MHz maximum operation, with 3.5 ns access time and 180 mA operating current specified at that frequency. Attempting 200 MHz operation violates AC timing parameters including tCO (clock-to-output), tSU (data setup), and tH (data hold), risking metastability and data corruption. The 200 MHz variant is CY7C1354CV25-200BZCT, which has tighter internal timing margins.

How does the ZZ pin interact with CEN and clock stopping?

Asserting ZZ places the device in deep sleep mode, reducing current to 40 mA while retaining memory content; CEN remains functional but has no effect unless ZZ is deasserted first. Clock stopping (via CEN) alone maintains full functionality and current draw (~180 mA), whereas ZZ + stopped clock achieves lowest power state. Wake-up from ZZ requires ≥100 ns stabilization before first valid access.