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Infineon Technologies CY7C1354CV25-200AXCT
- Part No.:
- CY7C1354CV25-200AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1354CV25-200AXCT.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,779
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Product details
Overview
CY7C1354CV25-200AXCT from Infineon Technologies (formerly Cypress) is a 2.5 V, 256K × 36 pipelined synchronous SRAM with NoBL™ architecture, supporting zero-wait-state 200 MHz bus operation, 3.2 ns clock-to-output access time, and synchronous self-timed writes. It serves as high-throughput data buffer in network packet processors requiring back-to-back read/write transitions.
For engineers reviewing the CY7C1354CV25-200AXCT datasheet, CY7C1354CV25-200AXCT pinout, CY7C1354CV25-200AXCT application, or CY7C1354CV25-200AXCT equivalent, key selection criteria include burst order support (linear/interleaved), byte-write capability across four 9-bit groups, IEEE 1149.1 JTAG compliance, and TQFP-100 packaging for board-level thermal and routing constraints.
Technical Context
The device implements fully registered I/O with rising-edge clock synchronization for all address, control, and data signals. Its NoBL™ logic enables consecutive read/write cycles without bus latency by eliminating asynchronous output enable timing dependencies.
Internally self-timed output buffer control replaces traditional OE-driven tri-state management, while synchronous write circuitry ensures deterministic write completion within one clock cycle. Three chip enables (CE1–CE3) and dedicated byte write selects (BWa–BWd) support fine-grained bank and byte-level memory access.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 (9-Mbit total); supports 36-bit parallel data path for wide-bus systems |
| Max Clock Frequency | 200 MHz; enables sustained 200 MT/s throughput with no wait states |
| Access Time (tAC) | 3.2 ns; defines minimum clock-to-valid-output delay for timing closure |
| Supply Voltage | 2.5 V ±0.2 V; single-rail operation simplifies power delivery vs. dual-voltage SRAMs |
| Burst Mode | Linear or interleaved; matches processor cache line fetch patterns in networking SoCs |
| Byte Write Control | BWa–BWd per 9-bit byte; allows independent write masking without read-modify-write overhead |
| Power Dissipation | 220 mA max operating current; enables thermal budgeting in dense packet buffer designs |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), 14 × 20 × 1.4 mm, lead-free (Pb-free) construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Primary synchronous clock input | Rising-edge-triggered register control for all inputs/outputs; governs pipeline stage alignment |
| CEN | Clock enable | Active-low signal that suspends clock domain operation without resetting internal state |
| CE1, CE2, CE3 | Synchronous chip enables | Three-level decode for multi-bank memory mapping; CE1 dominant for hierarchical selection |
| BWa–BWd | Byte write enables | Four independent 9-bit write masks; enables partial-word updates without external logic |
| DQa–DQd | Data I/O buses (9-bit each) | Four 9-bit bidirectional data groups aligned to 36-bit word width; support concurrent read/write on adjacent bytes |
| ADV/LD | Address valid/load | Controls burst address generation mode (linear vs. interleaved) and initiates burst sequences |
| ZZ | Deep sleep control | Asynchronous entry into low-power standby (<40 µA), retaining data with clock stopped |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ architecture | Enables true back-to-back read/write operations with zero wait states, increasing effective bandwidth by >30% vs. standard sync SRAMs |
| Fully registered I/O | All inputs and outputs synchronized to CLK rising edge, eliminating setup/hold violations in high-speed PCB layouts |
| IEEE 1149.1 JTAG boundary scan | Supports production test and debug of solder joint integrity and interconnect continuity on dense routing boards |
| Synchronous self-timed writes | Internal write completion detection eliminates need for external write acknowledge timing margins |
| 2.5 V single-supply operation | Reduces power delivery complexity and improves noise immunity vs. 3.3 V SRAMs in mixed-signal environments |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/25G Ethernet switch ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency data buffer interfacing directly with MAC-layer controllers via 36-bit parallel bus. Use Value: 200 MHz zero-wait-state operation sustains full line-rate buffering without stalling the packet processing pipeline. |
Use Scenario: Frame buffering in carrier-grade SDH/SONET add-drop multiplexers with strict jitter and latency requirements. IC Role / Device Role / Timing Role: Synchronous burst memory supporting linear address increments for contiguous frame storage. Use Value: 3.2 ns tAC and fully registered I/O ensure deterministic timing margins under temperature and voltage variation. |
| Baseband Processor Cache | Radar Signal Processing Buffer |
Use Scenario: L2 cache extension for multicore baseband processors in 5G NR massive MIMO base stations. IC Role / Device Role / Timing Role: Pipelined SRAM providing low-latency instruction/data fetch between DSP cores and shared memory fabric. Use Value: Byte-write capability (BWA–BWD) enables efficient cache line updates without full-word overwrites. |
Use Scenario: Real-time buffering of ADC samples in automotive radar ECU front-end modules. IC Role / Device Role / Timing Role: High-reliability burst memory storing chirp sequence data prior to FFT processing. Use Value: ZZ sleep mode reduces standby current to <40 µA during inter-chirp idle periods, extending system energy efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 3.3 V supply, 10 ns access time, 165-ball FBGA only | Lacks NoBL™ architecture; requires wait states above 133 MHz | Select when legacy 3.3 V system integration is required and bandwidth ≤133 MHz suffices |
| ISSI IS61WV102432BLL-100TQLI | 2.5 V, 100 MHz max, 10 ns tAC, no JTAG or ZZ mode | Non-pipelined architecture; no burst addressing or byte-write granularity | Select for cost-sensitive, lower-speed applications where advanced features are unnecessary |
Compared with IDT72V2115L10PF and IS61WV102432BLL-100TQLI, CY7C1354CV25-200AXCT delivers higher bandwidth (200 MHz vs. ≤133/100 MHz), deterministic zero-wait-state operation, and production-test-ready JTAG - critical for high-reliability telecom and networking hardware.
Availability
CY7C1354CV25-200AXCT is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, and baseband processor caches requiring stable component supply across extended product lifecycles.
Supply support for CY7C1354CV25-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ SRAMs, for industrial, automotive, and communications markets.
This device belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in networking and telecom infrastructure equipment.
FAQ
What is the function of the ADV/LD pin on CY7C1354CV25-200AXCT?
The ADV/LD (Address Valid/Load) pin controls burst address generation mode and initiates burst sequences. When asserted, it loads the initial address and determines whether subsequent addresses increment linearly or follow an interleaved pattern based on MODE pin state. It is essential for configuring burst behavior in cache-like applications.
Does CY7C1354CV25-200AXCT support both linear and interleaved burst orders?
Yes - burst order is selected via the MODE pin: MODE = HIGH enables linear burst, MODE = LOW enables interleaved burst. This dual-mode capability aligns with different processor cache line fetch strategies, such as those used in PowerPC and ARM-based network processors.
How does the ZZ (sleep) mode reduce power consumption?
In ZZ mode, the device enters deep standby with clock stopped and core logic powered down, drawing ≤40 µA typical current while retaining stored data. Exit is asynchronous and requires only ZZ deassertion followed by one clock cycle before normal operation resumes.
Is CY7C1354CV25-200AXCT pin-compatible with ZBT™ SRAMs?
Yes - it is pin-compatible and functionally equivalent to ZBT™ devices (e.g., IDT72V2115), enabling drop-in replacement in existing ZBT-based designs. Key compatible signals include CEN, CE1–CE3, BWx, and ADV/LD, preserving layout and firmware compatibility.
CY7C1354CV25-200AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1354CV25-200AXCT FAQ
1.How can I place an order for CY7C1354CV25-200AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1354CV25-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1354CV25-200AXCT reliable?
The price and inventory of CY7C1354CV25-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354CV25-200AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1354CV25-200AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354CV25-200AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1354CV25-200AXCT?
CY7C1354CV25-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1354CV25-200AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1354CV25-200AXCT?
For technical support, including CY7C1354CV25-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354CV25-200AXCT requirements.
6.How does Aetrix verify that CY7C1354CV25-200AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1354CV25-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354CV25-200AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1354CV25-200AXCT?
All CY7C1354CV25-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354CV25-200AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1354CV25-200AXCT part is unused and in its original packaging.
Return procedure for CY7C1354CV25-200AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1354CV25-200AXCT Tags
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