Infineon Technologies CY7C1354D-200BZC

Overview

CY7C1354D-200BZC from Infineon Technologies (formerly Cypress) is a 9-Mbit (256K × 36) synchronous pipelined SRAM with No Bus Latency™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It supports true back-to-back read/write operations at 200 MHz with zero wait states, features 3.2 ns clock-to-output delay, byte-write capability via four BW inputs, and operates on a single 3.3 V core supply with selectable 3.3 V or 2.5 V I/O (VDDQ).

For engineers reviewing the CY7C1354D-200BZC datasheet, CY7C1354D-200BZC pinout, CY7C1354D-200BZC application, or CY7C1354D-200BZC equivalent, key selection criteria include burst mode control (linear/interleaved via MODE pin), synchronous self-timed write timing, JTAG boundary-scan support (IEEE 1149.1), and FBGA-165 package compatibility with ZBT-style memory interfaces.

Technical Context

The device implements fully registered synchronous operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to the same clock edge. Internal burst counter logic-configured by the MODE strap pin-supports either linear or interleaved 4-word burst sequences without external address generation.

Write operations are controlled by WE and four byte-write enables (BWa–BWd), with on-chip self-timed write circuitry eliminating external write pulse timing constraints. Output drivers are synchronously tristated during write data cycles and upon deselect, preventing bus contention. Asynchronous OE provides additional output control but is masked during writes and state transitions.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant (Pb-free option available per ordering code).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L10PF and IS61WV102436B, CY7C1354D-200BZC uniquely delivers 200 MHz operation with 3.2 ns tCO in a 9-Mbit configuration - optimal for bandwidth-constrained, latency-sensitive designs where ZBT compatibility and NoBL efficiency are mandatory.

Availability

CY7C1354D-200BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache applications requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C1354D-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

CY7C1354D belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered for zero-wait-state, high-throughput memory subsystems in carrier-grade networking and infrastructure equipment.

FAQ

What is the function of the MODE pin, and how does it affect burst behavior?

The MODE pin is a static configuration input that selects burst order: HIGH enables interleaved burst addressing (e.g., 0x00, 0x02, 0x01, 0x03), while LOW enables linear burst (e.g., 0x00, 0x01, 0x02, 0x03). It must be set at power-up and held stable during operation; floating defaults to HIGH. This setting determines how the internal 2-bit burst counter increments and directly impacts compatibility with legacy ZBT controllers or cache-line-aligned processors.

How does the device handle simultaneous read and write operations on the same data bus?

CY7C1354D prevents bus contention through synchronous tristate control: during the data portion of any write cycle, all DQ and DQP outputs are automatically forced into high-impedance regardless of OE state. Outputs remain tristated until the next read cycle begins and OE is asserted LOW. This hardware-enforced isolation eliminates need for external bus arbitration logic in full-duplex memory interfaces.

Can CY7C1354D-200BZC operate with VDDQ = 2.5 V while VDD remains at 3.3 V?

Yes - the device supports independent VDD (3.3 V ± 0.3 V) and VDDQ (2.5 V or 3.3 V) supplies. When VDDQ = 2.5 V, all DQ/DQP I/O levels conform to 2.5 V LVTTL specifications, allowing direct interfacing with 2.5 V FPGAs or PHYs without level shifters. Core logic remains powered at 3.3 V, ensuring full timing compliance at 200 MHz. Both supplies must be ramped monotonically during power-up.

Is JTAG boundary scan functional in sleep mode (ZZ) or stop-clock mode?

No - JTAG operation requires active VDD and CLK; the ZZ (deep sleep) mode powers down internal clocks and logic, disabling TAP controller functionality. However, JTAG remains fully operational when only CEN is deasserted (stop-clock mode), as core logic and TAP registers retain power and state. IEEE 1149.1 testing is supported in all active and stop-clock states but not in ZZ mode.