Infineon Technologies CY7C1355B-100AC
- Part No.:
- CY7C1355B-100AC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1355B-100AC.pdf
- Description:
- IC SRAM 9MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:2,998
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1355B-100AC from Cypress Semiconductor is a 9-Mbit synchronous flow-through SRAM (256K × 36 organization) with No Bus Latency™ architecture, designed for high-throughput memory buffering in networking and telecom data paths. It supports 100-MHz zero-wait-state operation, delivers 7.5 ns clock-to-output delay, features byte-write capability across four 9-bit data groups, and operates with 3.3V core/I/O supply.
For engineers reviewing the CY7C1355B-100AC datasheet, CY7C1355B-100AC pinout, CY7C1355B-100AC application, or CY7C1355B-100AC equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous chip enable timing (CE1/CE3 active-low, CE2 active-high), ZZ sleep mode behavior, and TQFP-100 package pin compatibility with ZBT™-class systems.
Technical Context
The device implements a synchronous flow-through architecture with registered address, control, and data inputs sampled on the rising edge of CLK, qualified by CEN. Burst addressing is driven by a two-bit internal counter using A[1:0], configurable via MODE pin for linear or interleaved sequences.
Write operations are self-timed and synchronized to CLK, with byte write select (BWA–BWD) controlling 9-bit segments independently. Output drivers are synchronously three-stated during write data cycles and upon deselection, eliminating bus contention without requiring external OE timing coordination.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 bits - supports 9-Mbit buffering with 36-bit wide data path for parallel bus architectures. |
| Max Clock Frequency | 100 MHz - enables sustained 100 MT/s throughput with no wait states in back-to-back read/write sequences. |
| Access Time (tCO) | 7.5 ns - defines minimum clock-to-valid-output delay for timing-critical synchronous interfaces. |
| I/O Voltage | 3.3V - compatible with LVTTL and LVCMOS logic families; separate VDDQ rail isolates I/O noise from core logic. |
| Standby Current | 30 mA - measured in CMOS standby mode; reduced further in ZZ sleep mode with data retention. |
| Burst Capability | Linear or interleaved - selected by MODE pin; determines address increment pattern during burst reads/writes. |
| Package | 100-pin TQFP (14 × 20 mm) - JEDEC-standard footprint with exposed thermal pad; pin-compatible with ZBT™ SRAMs. |
Pinout & Package
Package: 100-lead Thin Quad Flat Package (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, thermally enhanced with exposed pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Synchronous Address Input | 18-bit address bus sampled on CLK rise; A[1:0] drive internal 2-bit burst counter. |
| BWA–BWD | Synchronous Byte Write Enable | Four active-low signals controlling 9-bit write segments; qualified with WE and CLK. |
| CE1, CE3 | Synchronous Chip Enable (active low) | Two of three enables used for depth expansion; sampled on CLK rise with CE2 (active high). |
| CLK, CEN | Clock and Clock Enable | CLK is gated by CEN; deasserting CEN suspends operation without deselecting device. |
| DQPA–DQPD | Parity Data I/O | Four 9-bit parity I/O lines functionally identical to DQs; controlled by corresponding BWx pins. |
| OE | Asynchronous Output Enable | Three-states outputs asynchronously; masked during write data phase and device deselection. |
| ZZ | Asynchronous Sleep Control | Active-high entry into low-power sleep mode with full data retention; non-time-critical wake-up. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Eliminates dead cycles between consecutive read/write operations, enabling true back-to-back transfers at full clock rate. |
| Internally Self-Timed Output Buffer | Removes dependency on external OE timing control; output enable is managed synchronously within device logic. |
| Byte-Write Select per 9-bit Segment | Enables granular 9-bit writes across four independent data groups (A–D), reducing unnecessary data overwrites. |
| Configurable Burst Order | MODE pin selects linear (GND) or interleaved (VDD/floating) burst addressing for system-level cache coherence alignment. |
| Three Chip Enables with Mixed Polarity | CE1/CE3 (active low) and CE2 (active high) allow flexible bank decoding and seamless depth expansion in multi-SRAM systems. |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory in Telecom Routers |
|---|---|
Use Scenario: High-speed packet buffering between ingress and egress ports in Layer 2/3 switching fabric. IC Role / Device Role / Timing Role: Primary 36-bit wide synchronous SRAM providing zero-latency data staging for cut-through forwarding. Use Value: 100-MHz operation and NoBL™ architecture sustain 3.6 Gbps aggregate bandwidth with deterministic timing for jitter-sensitive traffic. | Use Scenario: Frame buffering in OC-192/STM-64 line interface cards handling SONET/SDH payloads. IC Role / Device Role / Timing Role: Flow-through SRAM acting as elastic store between framer and processor subsystems with burst-aligned access. Use Value: Linear/interleaved burst modes align with SONET pointer processing requirements; ZZ sleep reduces power during idle intervals. |
| PCI Express Endpoint Buffering | Industrial Real-Time Controller Cache |
Use Scenario: Temporary storage for PCIe transaction layer packets before DMA transfer to host memory. IC Role / Device Role / Timing Role: Synchronous SRAM interfacing directly to FPGA-based PCIe root complex logic with registered control signals. Use Value: Registered inputs (address, WE, CE) ensure setup/hold compliance at 100 MHz; CEN enables precise clock gating during link power management. | Use Scenario: Deterministic instruction/data cache for dual-core industrial motion controllers executing hard real-time tasks. IC Role / Device Role / Timing Role: Low-latency memory buffer supporting simultaneous read-modify-write cycles for servo loop updates. Use Value: 7.5 ns tCO and synchronous self-timed writes guarantee sub-10 ns memory access predictability critical for <1 µs control loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 512K × 18 organization, 100-MHz, 3.3V, same TQFP-100 package but different burst control and CE polarity. | Requires redesign of address mapping and burst sequence logic; lacks ZZ sleep mode. | Select when 18-bit data width suffices and JTAG boundary scan is not required. |
| ISSI IS61WV102436BLL-100TQLI | 1M × 36 organization, 100-MHz, 3.3V, TQFP-100, pin-compatible but uses standard synchronous SRAM timing (no NoBL™). | Introduces 1-cycle latency between write-read transitions; requires wait-state insertion in high-frequency back-to-back scenarios. | Select when cost sensitivity outweighs throughput optimization and system can tolerate added latency. |
Compared with IDT72V2115L10PF and IS61WV102436BLL-100TQLI, the CY7C1355B-100AC uniquely delivers zero-wait-state back-to-back operation via NoBL™ architecture, retains data in ZZ sleep mode, and supports mixed-polarity chip enables for flexible bank decoding-critical for telecom and networking designs demanding deterministic latency.
Availability
CY7C1355B-100AC is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, line card memory in telecom routers, and PCI Express endpoint buffering requiring stable component supply and long-term obsolescence planning.
Supply support for CY7C1355B-100AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.
The CY7C1355B belongs to Cypress's NoBL™ SRAM product line, engineered specifically to eliminate bus latency in high-speed packet-processing and real-time control systems where deterministic memory access is mandatory.
FAQ
What is the function of the MODE pin on CY7C1355B-100AC?
The MODE pin selects burst addressing order: tied to GND for linear burst (incrementing addresses), or to VDD/floating for interleaved burst (bit-reversed address sequencing). This setting is latched at power-up and remains fixed until reset. It directly affects how ADV/LD advances the internal burst counter and must match the expected pattern of the memory controller.
How does the ZZ pin behave during sleep mode?
When ZZ is driven HIGH, the device enters a non-time-critical sleep state with full data retention and reduced current draw (~30 mA standby drops further). Clock and control inputs are ignored except for ZZ itself; wake-up occurs synchronously on the next valid CLK edge after ZZ returns LOW. No initialization sequence is required post-wake.
Can CY7C1355B-100AC operate with mixed voltage supplies?
Yes - it requires 3.3V ± 0.3V on VDD (core) and VDDQ (I/O), with both rails referenced to the same ground. There is no separate 2.5V option for this -100AC speed grade; the 2.5V I/O support mentioned in general family docs applies only to other variants (e.g., -133AC with dual-voltage option). All I/Os are LVTTL-compatible at 3.3V.
Is JTAG boundary scan supported in the TQFP package?
No - JTAG (TDO, TDI, TMS, TCK) is available only on BGA and fBGA packages (119-ball and 165-ball). The 100-lead TQFP package omits these pins entirely; boundary scan testing is not possible in this variant. System-level test strategies must rely on functional I/O verification or external boundary-scan masters on adjacent devices.
CY7C1355B-100AC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Bag
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1355B-100AC FAQ
1.How can I place an order for CY7C1355B-100AC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1355B-100AC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1355B-100AC reliable?
The price and inventory of CY7C1355B-100AC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1355B-100AC is usually 5 days.
3.What payment methods are accepted for CY7C1355B-100AC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1355B-100AC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1355B-100AC?
CY7C1355B-100AC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1355B-100AC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1355B-100AC?
For technical support, including CY7C1355B-100AC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1355B-100AC requirements.
6.How does Aetrix verify that CY7C1355B-100AC is sourced from the original manufacturer or authorized distributors?
All CY7C1355B-100AC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1355B-100AC meets industry standards.
7.What is the process for return or replacement of CY7C1355B-100AC?
All CY7C1355B-100AC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1355B-100AC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1355B-100AC part is unused and in its original packaging.
Return procedure for CY7C1355B-100AC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1355B-100AC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

