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Infineon Technologies CY7C1355B-100AC

Part No.:
CY7C1355B-100AC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1355B-100AC.pdf
Description:
IC SRAM 9MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,998

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Product details

Overview

CY7C1355B-100AC from Cypress Semiconductor is a 9-Mbit synchronous flow-through SRAM (256K × 36 organization) with No Bus Latency™ architecture, designed for high-throughput memory buffering in networking and telecom data paths. It supports 100-MHz zero-wait-state operation, delivers 7.5 ns clock-to-output delay, features byte-write capability across four 9-bit data groups, and operates with 3.3V core/I/O supply.

For engineers reviewing the CY7C1355B-100AC datasheet, CY7C1355B-100AC pinout, CY7C1355B-100AC application, or CY7C1355B-100AC equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous chip enable timing (CE1/CE3 active-low, CE2 active-high), ZZ sleep mode behavior, and TQFP-100 package pin compatibility with ZBT™-class systems.

Technical Context

The device implements a synchronous flow-through architecture with registered address, control, and data inputs sampled on the rising edge of CLK, qualified by CEN. Burst addressing is driven by a two-bit internal counter using A[1:0], configurable via MODE pin for linear or interleaved sequences.

Write operations are self-timed and synchronized to CLK, with byte write select (BWA–BWD) controlling 9-bit segments independently. Output drivers are synchronously three-stated during write data cycles and upon deselection, eliminating bus contention without requiring external OE timing coordination.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 36 bits - supports 9-Mbit buffering with 36-bit wide data path for parallel bus architectures.
Max Clock Frequency100 MHz - enables sustained 100 MT/s throughput with no wait states in back-to-back read/write sequences.
Access Time (tCO)7.5 ns - defines minimum clock-to-valid-output delay for timing-critical synchronous interfaces.
I/O Voltage3.3V - compatible with LVTTL and LVCMOS logic families; separate VDDQ rail isolates I/O noise from core logic.
Standby Current30 mA - measured in CMOS standby mode; reduced further in ZZ sleep mode with data retention.
Burst CapabilityLinear or interleaved - selected by MODE pin; determines address increment pattern during burst reads/writes.
Package100-pin TQFP (14 × 20 mm) - JEDEC-standard footprint with exposed thermal pad; pin-compatible with ZBT™ SRAMs.

Pinout & Package

Package: 100-lead Thin Quad Flat Package (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, thermally enhanced with exposed pad.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Synchronous Address Input18-bit address bus sampled on CLK rise; A[1:0] drive internal 2-bit burst counter.
BWA–BWDSynchronous Byte Write EnableFour active-low signals controlling 9-bit write segments; qualified with WE and CLK.
CE1, CE3Synchronous Chip Enable (active low)Two of three enables used for depth expansion; sampled on CLK rise with CE2 (active high).
CLK, CENClock and Clock EnableCLK is gated by CEN; deasserting CEN suspends operation without deselecting device.
DQPA–DQPDParity Data I/OFour 9-bit parity I/O lines functionally identical to DQs; controlled by corresponding BWx pins.
OEAsynchronous Output EnableThree-states outputs asynchronously; masked during write data phase and device deselection.
ZZAsynchronous Sleep ControlActive-high entry into low-power sleep mode with full data retention; non-time-critical wake-up.

Key Features

FeatureDesign Value
No Bus Latency™ ArchitectureEliminates dead cycles between consecutive read/write operations, enabling true back-to-back transfers at full clock rate.
Internally Self-Timed Output BufferRemoves dependency on external OE timing control; output enable is managed synchronously within device logic.
Byte-Write Select per 9-bit SegmentEnables granular 9-bit writes across four independent data groups (A–D), reducing unnecessary data overwrites.
Configurable Burst OrderMODE pin selects linear (GND) or interleaved (VDD/floating) burst addressing for system-level cache coherence alignment.
Three Chip Enables with Mixed PolarityCE1/CE3 (active low) and CE2 (active high) allow flexible bank decoding and seamless depth expansion in multi-SRAM systems.

Applications

Packet Buffering in Switch ASICsLine Card Memory in Telecom Routers

Use Scenario: High-speed packet buffering between ingress and egress ports in Layer 2/3 switching fabric.

IC Role / Device Role / Timing Role: Primary 36-bit wide synchronous SRAM providing zero-latency data staging for cut-through forwarding.

Use Value: 100-MHz operation and NoBL™ architecture sustain 3.6 Gbps aggregate bandwidth with deterministic timing for jitter-sensitive traffic.

Use Scenario: Frame buffering in OC-192/STM-64 line interface cards handling SONET/SDH payloads.

IC Role / Device Role / Timing Role: Flow-through SRAM acting as elastic store between framer and processor subsystems with burst-aligned access.

Use Value: Linear/interleaved burst modes align with SONET pointer processing requirements; ZZ sleep reduces power during idle intervals.

PCI Express Endpoint BufferingIndustrial Real-Time Controller Cache

Use Scenario: Temporary storage for PCIe transaction layer packets before DMA transfer to host memory.

IC Role / Device Role / Timing Role: Synchronous SRAM interfacing directly to FPGA-based PCIe root complex logic with registered control signals.

Use Value: Registered inputs (address, WE, CE) ensure setup/hold compliance at 100 MHz; CEN enables precise clock gating during link power management.

Use Scenario: Deterministic instruction/data cache for dual-core industrial motion controllers executing hard real-time tasks.

IC Role / Device Role / Timing Role: Low-latency memory buffer supporting simultaneous read-modify-write cycles for servo loop updates.

Use Value: 7.5 ns tCO and synchronous self-timed writes guarantee sub-10 ns memory access predictability critical for <1 µs control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72V2115L10PF512K × 18 organization, 100-MHz, 3.3V, same TQFP-100 package but different burst control and CE polarity.Requires redesign of address mapping and burst sequence logic; lacks ZZ sleep mode.Select when 18-bit data width suffices and JTAG boundary scan is not required.
ISSI IS61WV102436BLL-100TQLI1M × 36 organization, 100-MHz, 3.3V, TQFP-100, pin-compatible but uses standard synchronous SRAM timing (no NoBL™).Introduces 1-cycle latency between write-read transitions; requires wait-state insertion in high-frequency back-to-back scenarios.Select when cost sensitivity outweighs throughput optimization and system can tolerate added latency.

Compared with IDT72V2115L10PF and IS61WV102436BLL-100TQLI, the CY7C1355B-100AC uniquely delivers zero-wait-state back-to-back operation via NoBL™ architecture, retains data in ZZ sleep mode, and supports mixed-polarity chip enables for flexible bank decoding-critical for telecom and networking designs demanding deterministic latency.

Availability

CY7C1355B-100AC is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, line card memory in telecom routers, and PCI Express endpoint buffering requiring stable component supply and long-term obsolescence planning.

Supply support for CY7C1355B-100AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1355B belongs to Cypress's NoBL™ SRAM product line, engineered specifically to eliminate bus latency in high-speed packet-processing and real-time control systems where deterministic memory access is mandatory.

FAQ

What is the function of the MODE pin on CY7C1355B-100AC?

The MODE pin selects burst addressing order: tied to GND for linear burst (incrementing addresses), or to VDD/floating for interleaved burst (bit-reversed address sequencing). This setting is latched at power-up and remains fixed until reset. It directly affects how ADV/LD advances the internal burst counter and must match the expected pattern of the memory controller.

How does the ZZ pin behave during sleep mode?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with full data retention and reduced current draw (~30 mA standby drops further). Clock and control inputs are ignored except for ZZ itself; wake-up occurs synchronously on the next valid CLK edge after ZZ returns LOW. No initialization sequence is required post-wake.

Can CY7C1355B-100AC operate with mixed voltage supplies?

Yes - it requires 3.3V ± 0.3V on VDD (core) and VDDQ (I/O), with both rails referenced to the same ground. There is no separate 2.5V option for this -100AC speed grade; the 2.5V I/O support mentioned in general family docs applies only to other variants (e.g., -133AC with dual-voltage option). All I/Os are LVTTL-compatible at 3.3V.

Is JTAG boundary scan supported in the TQFP package?

No - JTAG (TDO, TDI, TMS, TCK) is available only on BGA and fBGA packages (119-ball and 165-ball). The 100-lead TQFP package omits these pins entirely; boundary scan testing is not possible in this variant. System-level test strategies must rely on functional I/O verification or external boundary-scan masters on adjacent devices.

CY7C1355B-100AC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1355B-100AC FAQ

1.How can I place an order for CY7C1355B-100AC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1355B-100AC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1355B-100AC reliable?

The price and inventory of CY7C1355B-100AC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1355B-100AC is usually 5 days.

3.What payment methods are accepted for CY7C1355B-100AC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1355B-100AC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1355B-100AC?

CY7C1355B-100AC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1355B-100AC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1355B-100AC?

For technical support, including CY7C1355B-100AC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1355B-100AC requirements.

6.How does Aetrix verify that CY7C1355B-100AC is sourced from the original manufacturer or authorized distributors?

All CY7C1355B-100AC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1355B-100AC meets industry standards.

7.What is the process for return or replacement of CY7C1355B-100AC?

All CY7C1355B-100AC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1355B-100AC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1355B-100AC part is unused and in its original packaging.

Return procedure for CY7C1355B-100AC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1355B-100AC Tags

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