Infineon Technologies CY7C1355C-100AXC
- Part No.:
- CY7C1355C-100AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1355C-100AXC.pdf
- Description:
- IC SRAM 9MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,055
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Product details
Overview
CY7C1355C-100AXC from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput back-to-back read/write operations in networking and telecom data paths. It operates at 133 MHz with zero wait states, delivers 6.5 ns clock-to-output delay, supports byte write via four BWx inputs, and uses 3.3 V/2.5 V I/O supply (VDDQ).
For engineers reviewing the CY7C1355C-100AXC datasheet, CY7C1355C-100AXC pinout, CY7C1355C-100AXC application, or CY7C1355C-100AXC equivalent, key selection criteria include burst order control (linear/interleaved), synchronous self-timed write timing, three chip enables for depth expansion, and JTAG boundary scan support in BGA packages.
Technical Context
The CY7C1355C-100AXC implements a synchronous flow-through architecture with registered address, data, and control inputs sampled on the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without dead cycles.
Burst operation is controlled by ADV/LD and MODE pins: MODE selects linear or interleaved order using A0/A1; ADV/LD loads or increments the internal two-bit burst counter. Write sequencing uses synchronous self-timed circuitry with WE and four active-low byte write enables (BWA–BWD), while OE provides asynchronous output enable with automatic tri-state during write data phases.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 organization), enabling 36-bit wide data paths without external multiplexing |
| Max Clock Frequency | 133 MHz - supports sustained 133 MT/s throughput with no wait states |
| Access Time (tCDV) | 6.5 ns - defines minimum clock-to-valid-output delay for timing-critical pipeline stages |
| I/O Voltage (VDDQ) | 3.3 V or 2.5 V - allows interoperability with mixed-voltage ASIC/FPGA I/O banks |
| Burst Capability | Linear or interleaved 4-word burst - reduces address bus traffic and simplifies controller logic |
| Power Management | ZZ sleep mode with data retention - cuts standby current to <40 mA while preserving memory contents |
| JTAG Support | IEEE 1149.1-compliant boundary scan - enables board-level test and interconnect verification |
Pinout & Package
Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Synchronous Address Input | Latched on rising CLK edge; A0/A1 drive internal 2-bit burst counter for sequential accesses |
| BWA–BWD | Synchronous Byte Write Enable | Active-low per-byte mask; qualified with WE to enable partial writes without data corruption |
| CE1, CE3 | Synchronous Chip Enable (active LOW) | Combined with CE2 (active HIGH) for 3-signal depth expansion across multiple SRAMs |
| ADV/LD | Synchronous Address Advance/Load | HIGH advances burst counter; LOW loads new address - critical for burst initialization and wrap control |
| MODE | Burst Order Configuration | Strap pin: GND = linear burst, VDD/floating = interleaved - determines memory access pattern for cache coherence |
| ZZ | Asynchronous Sleep Control | Active-HIGH entry into low-power mode with full data retention; internal pull-down enables default active-LOW operation |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Eliminates dead cycles between read/write transitions - enables true back-to-back 133 MT/s operation without controller-inserted stalls |
| Registered Flow-Through Inputs | All address, data, and control signals synchronized to CLK rising edge - ensures deterministic setup/hold timing across voltage/temperature |
| Synchronous Self-Timed Writes | On-chip write timing control removes external write pulse width constraints - simplifies FPGA/ASIC interface design |
| Three Chip Enables with Mixed Polarity | CE1/CE3 (active LOW) + CE2 (active HIGH) - supports flexible bank decoding and seamless depth expansion up to 32 Mbit |
| Automatic Output Tri-State | Outputs disabled during write data phase regardless of OE state - prevents bus contention without external glue logic |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches with real-time forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffer SRAM interfacing directly to MAC controllers and switch fabric ASICs. Use Value: 133-MHz zero-wait-state operation sustains full line-rate 10Gbps packet buffering with deterministic 6.5 ns read latency. |
Use Scenario: Frame assembly/disassembly and header processing in OC-192/STM-64 SONET/SDH line cards. IC Role / Device Role / Timing Role: Synchronous burst SRAM serving as descriptor and payload memory for framer and mapper ICs. Use Value: Linear/interleaved burst modes align with ATM cell or SONET frame structures, reducing address bus overhead by 75% per burst. |
| Baseband Processing Buffer | Industrial Real-Time Controller Cache |
|
Use Scenario: Temporary storage of IQ samples and FFT outputs in LTE/5G baseband processing units. IC Role / Device Role / Timing Role: Low-jitter, flow-through SRAM buffering between ADC/DAC interfaces and DSP cores. Use Value: Registered inputs and 6.5 ns tCDV ensure sub-cycle timing margin for 122.88 MSPS sampling clocks with synchronous capture. |
Use Scenario: Deterministic instruction/data caching in safety-critical PLCs and motion controllers requiring guaranteed worst-case latency. IC Role / Device Role / Timing Role: Predictable-access SRAM used for real-time task stacks and I/O mapping tables. Use Value: ZZ sleep mode enables <40 mA standby current during idle cycles while preserving context - critical for fanless industrial enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L133PFI | 512K × 18 organization, 133 MHz, same NoBL™ architecture but narrower data bus | Requires two devices for 36-bit width; lacks MODE-selectable burst order | Select when system uses 18-bit datapaths or needs lower pin count over dual-device 36-bit implementation |
| ISSI IS61WV102436BLL-133TQLI | 1024K × 36, 133 MHz, compatible pinout but no JTAG or ZZ sleep mode | Higher density but no boundary scan or low-power sleep - limits testability and power-sensitive deployments | Choose for cost-sensitive designs where JTAG and deep-sleep are nonessential and 1-Mword capacity is required |
Compared with IDT72V2115L133PFI and IS61WV102436BLL-133TQLI, the CY7C1355C-100AXC uniquely combines 256K × 36 density, MODE-configurable burst order, IEEE 1149.1 JTAG, and ZZ sleep - making it optimal for space-constrained, testable, and power-aware telecom and networking modules.
Availability
CY7C1355C-100AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and industrial real-time controller cache applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1355C-100AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable systems-on-chip for industrial, automotive, and communications markets.
The CY7C1355C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-frequency data buffering in packet-switched infrastructure and real-time signal processing systems.
FAQ
What is the function of the MODE pin on CY7C1355C-100AXC?
The MODE pin selects burst access order: tied to GND for linear burst (0,1,2,3), or to VDD/floating for interleaved burst (0,2,1,3). This setting is sampled at power-up and remains static during operation, directly determining how the internal two-bit burst counter sequences A0/A1 for consecutive reads/writes without re-driving addresses.
How does the ZZ pin affect power consumption and data retention?
When ZZ is driven HIGH, the device enters non-time-critical sleep mode with full data retention and standby current reduced to ≤40 mA. Data integrity is preserved indefinitely under recommended operating conditions. The pin has an internal pull-down, so floating ZZ defaults to active-LOW normal operation - no external biasing required unless sleep mode is actively used.
Can CY7C1355C-100AXC operate with mixed VDD (core) and VDDQ (I/O) voltages?
Yes - VDD must be 3.3 V ± 0.3 V for core logic, while VDDQ supports either 3.3 V or 2.5 V ± 0.2 V for I/O drivers. This dual-supply configuration allows direct interfacing with 2.5 V FPGAs or 3.3 V ASICs without level shifters, provided VDDQ is stable before VDD during power-up and meets tVDDQVDD timing requirements per datasheet.
Is JTAG boundary scan supported in the 100-pin TQFP package?
No - TDO, TDI, TCK, and TMS pins are not bonded out in the 100-pin TQFP package. JTAG functionality is only available in the 119-ball and 165-ball BGA variants. For TQFP-based designs requiring test access, external boundary scan must be implemented at the board level using adjacent test-capable components.
CY7C1355C-100AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Bag
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1355C-100AXC FAQ
1.How can I place an order for CY7C1355C-100AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1355C-100AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1355C-100AXC reliable?
The price and inventory of CY7C1355C-100AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1355C-100AXC is usually 5 days.
3.What payment methods are accepted for CY7C1355C-100AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1355C-100AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1355C-100AXC?
CY7C1355C-100AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1355C-100AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1355C-100AXC?
For technical support, including CY7C1355C-100AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1355C-100AXC requirements.
6.How does Aetrix verify that CY7C1355C-100AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1355C-100AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1355C-100AXC meets industry standards.
7.What is the process for return or replacement of CY7C1355C-100AXC?
All CY7C1355C-100AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1355C-100AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1355C-100AXC part is unused and in its original packaging.
Return procedure for CY7C1355C-100AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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