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Infineon Technologies CY7C1355C-100AXC

Part No.:
CY7C1355C-100AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1355C-100AXC.pdf
Description:
IC SRAM 9MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,055

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Product details

Overview

CY7C1355C-100AXC from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput back-to-back read/write operations in networking and telecom data paths. It operates at 133 MHz with zero wait states, delivers 6.5 ns clock-to-output delay, supports byte write via four BWx inputs, and uses 3.3 V/2.5 V I/O supply (VDDQ).

For engineers reviewing the CY7C1355C-100AXC datasheet, CY7C1355C-100AXC pinout, CY7C1355C-100AXC application, or CY7C1355C-100AXC equivalent, key selection criteria include burst order control (linear/interleaved), synchronous self-timed write timing, three chip enables for depth expansion, and JTAG boundary scan support in BGA packages.

Technical Context

The CY7C1355C-100AXC implements a synchronous flow-through architecture with registered address, data, and control inputs sampled on the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without dead cycles.

Burst operation is controlled by ADV/LD and MODE pins: MODE selects linear or interleaved order using A0/A1; ADV/LD loads or increments the internal two-bit burst counter. Write sequencing uses synchronous self-timed circuitry with WE and four active-low byte write enables (BWA–BWD), while OE provides asynchronous output enable with automatic tri-state during write data phases.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (256K × 36 organization), enabling 36-bit wide data paths without external multiplexing
Max Clock Frequency 133 MHz - supports sustained 133 MT/s throughput with no wait states
Access Time (tCDV) 6.5 ns - defines minimum clock-to-valid-output delay for timing-critical pipeline stages
I/O Voltage (VDDQ) 3.3 V or 2.5 V - allows interoperability with mixed-voltage ASIC/FPGA I/O banks
Burst Capability Linear or interleaved 4-word burst - reduces address bus traffic and simplifies controller logic
Power Management ZZ sleep mode with data retention - cuts standby current to <40 mA while preserving memory contents
JTAG Support IEEE 1149.1-compliant boundary scan - enables board-level test and interconnect verification

Pinout & Package

Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Synchronous Address Input Latched on rising CLK edge; A0/A1 drive internal 2-bit burst counter for sequential accesses
BWA–BWD Synchronous Byte Write Enable Active-low per-byte mask; qualified with WE to enable partial writes without data corruption
CE1, CE3 Synchronous Chip Enable (active LOW) Combined with CE2 (active HIGH) for 3-signal depth expansion across multiple SRAMs
ADV/LD Synchronous Address Advance/Load HIGH advances burst counter; LOW loads new address - critical for burst initialization and wrap control
MODE Burst Order Configuration Strap pin: GND = linear burst, VDD/floating = interleaved - determines memory access pattern for cache coherence
ZZ Asynchronous Sleep Control Active-HIGH entry into low-power mode with full data retention; internal pull-down enables default active-LOW operation

Key Features

Feature Design Value
No Bus Latency™ Architecture Eliminates dead cycles between read/write transitions - enables true back-to-back 133 MT/s operation without controller-inserted stalls
Registered Flow-Through Inputs All address, data, and control signals synchronized to CLK rising edge - ensures deterministic setup/hold timing across voltage/temperature
Synchronous Self-Timed Writes On-chip write timing control removes external write pulse width constraints - simplifies FPGA/ASIC interface design
Three Chip Enables with Mixed Polarity CE1/CE3 (active LOW) + CE2 (active HIGH) - supports flexible bank decoding and seamless depth expansion up to 32 Mbit
Automatic Output Tri-State Outputs disabled during write data phase regardless of OE state - prevents bus contention without external glue logic

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches with real-time forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffer SRAM interfacing directly to MAC controllers and switch fabric ASICs.

Use Value: 133-MHz zero-wait-state operation sustains full line-rate 10Gbps packet buffering with deterministic 6.5 ns read latency.

Use Scenario: Frame assembly/disassembly and header processing in OC-192/STM-64 SONET/SDH line cards.

IC Role / Device Role / Timing Role: Synchronous burst SRAM serving as descriptor and payload memory for framer and mapper ICs.

Use Value: Linear/interleaved burst modes align with ATM cell or SONET frame structures, reducing address bus overhead by 75% per burst.

Baseband Processing Buffer Industrial Real-Time Controller Cache

Use Scenario: Temporary storage of IQ samples and FFT outputs in LTE/5G baseband processing units.

IC Role / Device Role / Timing Role: Low-jitter, flow-through SRAM buffering between ADC/DAC interfaces and DSP cores.

Use Value: Registered inputs and 6.5 ns tCDV ensure sub-cycle timing margin for 122.88 MSPS sampling clocks with synchronous capture.

Use Scenario: Deterministic instruction/data caching in safety-critical PLCs and motion controllers requiring guaranteed worst-case latency.

IC Role / Device Role / Timing Role: Predictable-access SRAM used for real-time task stacks and I/O mapping tables.

Use Value: ZZ sleep mode enables <40 mA standby current during idle cycles while preserving context - critical for fanless industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L133PFI 512K × 18 organization, 133 MHz, same NoBL™ architecture but narrower data bus Requires two devices for 36-bit width; lacks MODE-selectable burst order Select when system uses 18-bit datapaths or needs lower pin count over dual-device 36-bit implementation
ISSI IS61WV102436BLL-133TQLI 1024K × 36, 133 MHz, compatible pinout but no JTAG or ZZ sleep mode Higher density but no boundary scan or low-power sleep - limits testability and power-sensitive deployments Choose for cost-sensitive designs where JTAG and deep-sleep are nonessential and 1-Mword capacity is required

Compared with IDT72V2115L133PFI and IS61WV102436BLL-133TQLI, the CY7C1355C-100AXC uniquely combines 256K × 36 density, MODE-configurable burst order, IEEE 1149.1 JTAG, and ZZ sleep - making it optimal for space-constrained, testable, and power-aware telecom and networking modules.

Availability

CY7C1355C-100AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and industrial real-time controller cache applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1355C-100AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable systems-on-chip for industrial, automotive, and communications markets.

The CY7C1355C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-frequency data buffering in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the MODE pin on CY7C1355C-100AXC?

The MODE pin selects burst access order: tied to GND for linear burst (0,1,2,3), or to VDD/floating for interleaved burst (0,2,1,3). This setting is sampled at power-up and remains static during operation, directly determining how the internal two-bit burst counter sequences A0/A1 for consecutive reads/writes without re-driving addresses.

How does the ZZ pin affect power consumption and data retention?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode with full data retention and standby current reduced to ≤40 mA. Data integrity is preserved indefinitely under recommended operating conditions. The pin has an internal pull-down, so floating ZZ defaults to active-LOW normal operation - no external biasing required unless sleep mode is actively used.

Can CY7C1355C-100AXC operate with mixed VDD (core) and VDDQ (I/O) voltages?

Yes - VDD must be 3.3 V ± 0.3 V for core logic, while VDDQ supports either 3.3 V or 2.5 V ± 0.2 V for I/O drivers. This dual-supply configuration allows direct interfacing with 2.5 V FPGAs or 3.3 V ASICs without level shifters, provided VDDQ is stable before VDD during power-up and meets tVDDQVDD timing requirements per datasheet.

Is JTAG boundary scan supported in the 100-pin TQFP package?

No - TDO, TDI, TCK, and TMS pins are not bonded out in the 100-pin TQFP package. JTAG functionality is only available in the 119-ball and 165-ball BGA variants. For TQFP-based designs requiring test access, external boundary scan must be implemented at the board level using adjacent test-capable components.

CY7C1355C-100AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1355C-100AXC FAQ

1.How can I place an order for CY7C1355C-100AXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1355C-100AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1355C-100AXC reliable?

The price and inventory of CY7C1355C-100AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1355C-100AXC is usually 5 days.

3.What payment methods are accepted for CY7C1355C-100AXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1355C-100AXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1355C-100AXC?

CY7C1355C-100AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1355C-100AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1355C-100AXC?

For technical support, including CY7C1355C-100AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1355C-100AXC requirements.

6.How does Aetrix verify that CY7C1355C-100AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1355C-100AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1355C-100AXC meets industry standards.

7.What is the process for return or replacement of CY7C1355C-100AXC?

All CY7C1355C-100AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1355C-100AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1355C-100AXC part is unused and in its original packaging.

Return procedure for CY7C1355C-100AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1355C-100AXC Tags

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