Infineon Technologies CY7C1355C-133BGC

Overview

CY7C1355C-133BGC from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput memory buffering in networking and telecom line cards. It supports true back-to-back read/write operations at 133 MHz with zero wait states, delivers 6.5 ns clock-to-output delay, uses 3.3V/2.5V I/O supply (VDDQ), and features three synchronous chip enables (CE1/CE2/CE3) for seamless depth expansion in packet buffer applications.

For engineers reviewing the CY7C1355C-133BGC datasheet, CY7C1355C-133BGC pinout, CY7C1355C-133BGC application, or CY7C1355C-133BGC equivalent, this device is selected for systems requiring deterministic latency, burst-capable synchronous access, byte-selectable writes, JTAG boundary scan support, and low-power ZZ sleep mode - especially where ZBT™ compatibility and TQFP/BGA package flexibility are required.

Technical Context

The CY7C1355C-133BGC implements a synchronous flow-through architecture with registered address, data, and control inputs sampled on the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus dead cycles by enabling consecutive read/write transfers on every clock cycle without external wait-state insertion.

Burst operation is controlled by ADV/LD and MODE pins: linear or interleaved 4-word bursts are generated using A0/A1 as counter inputs, while self-timed write circuitry ensures deterministic write completion independent of system timing margins. Output drivers are synchronously tri-stated during write data phases to prevent bus contention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (Thin Quad Flat Package), RoHS-compliant, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PFGI and IS61WV25636BLL-133TQLI, the CY7C1355C-133BGC uniquely combines JTAG testability, ZZ sleep mode, and MODE-strapped burst selection - making it optimal for telecom equipment requiring field-upgradable firmware, low-power idle states, and production test coverage.

Availability

CY7C1355C-133BGC is available at Aetrix Electronics and suitable for telecom line card buffering, network packet switching, baseband processing in radio units, and JTAG-enabled board-level test applications requiring stable component supply across long-lifecycle deployments.

Supply support for CY7C1355C-133BGC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications and industrial markets.

The CY7C1355C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, burst-capable buffering in high-speed packet-processing systems where deterministic latency and power-aware operation are critical.

FAQ

What is the function of the MODE pin on CY7C1355C-133BGC?

The MODE pin is a static strap input that selects burst sequence order: tied to GND for linear burst (0,1,2,3), or to VDD/floating for interleaved burst (0,2,1,3). It is sampled only at power-up or reset and does not require dynamic control. This eliminates register writes or configuration overhead before burst operations begin.

How does the ZZ (Sleep) mode affect data retention and wake-up time?

In ZZ mode (pin driven HIGH), the device enters a non-time-critical low-power state with full data retention; VDD and VDDQ must remain powered. Wake-up is asynchronous and occurs within 10 ns of ZZ returning LOW, with no additional clock cycles or initialization required before the next valid access.

Can CY7C1355C-133BGC operate with mixed VDD (3.3 V) and VDDQ (2.5 V) supplies?

Yes - VDD powers the core logic (3.3 V nominal), while VDDQ independently powers I/O buffers (2.5 V or 3.3 V). This dual-supply architecture allows direct interfacing with 2.5 V FPGAs or ASICs while maintaining 3.3 V internal timing margins, reducing signal integrity issues and cross-talk in mixed-voltage systems.

Is the 100-pin TQFP package of CY7C1355C-133BGC pin-compatible with ZBT™ SRAMs?

Yes - the CY7C1355C-133BGC is explicitly designed as pin- and functionally compatible with industry-standard ZBT™ SRAMs (e.g., IDT72V2115), sharing identical pin assignments for address, data, CE, WE, OE, CLK, and BWX signals. This enables drop-in replacement in existing ZBT-based designs without layout changes.