Infineon Technologies CY7C1355C-133BGCT

Overview

CY7C1355C-133BGCT from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput back-to-back read/write operations in networking and telecom data paths. It operates at 133 MHz with zero wait states, delivers 6.5 ns clock-to-output delay, supports byte-write via four BWx inputs, and uses 3.3V/2.5V I/O supply (VDDQ). It is deployed in packet buffer subsystems requiring deterministic latency and burst-mode memory access.

For engineers reviewing the CY7C1355C-133BGCT datasheet, CY7C1355C-133BGCT pinout, CY7C1355C-133BGCT application, or CY7C1355C-133BGCT equivalent, key selection criteria include synchronous burst capability (linear/interleaved), three chip enables for depth expansion, JTAG boundary scan support, ZZ sleep mode for low-power standby, and compatibility with ZBT™-based system designs.

Technical Context

The CY7C1355C-133BGCT implements a synchronous flow-through architecture where all inputs-including address, WE, BWx, ADV/LD, and CEN-are registered on the rising edge of CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without dead cycles, with data transferred on every clock edge.

It features an internal two-bit burst counter controlled by A0/A1 and MODE pin, supporting linear or interleaved burst orders. Write operations are self-timed and synchronized; output drivers are tri-stated during write data phases to prevent bus contention, and OE remains asynchronous while internally masked during critical timing windows.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), lead-free and RoHS-compliant. Pinout validated per Cypress Document #38-05539 Rev. *E, Page 4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PFGI and IS61WV25636BLL-133TQLI, the CY7C1355C-133BGCT uniquely delivers true zero-wait-state operation with integrated ZZ sleep and JTAG testability-making it optimal for telecom infrastructure where latency predictability and production test coverage are non-negotiable.

Availability

CY7C1355C-133BGCT is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, line card memory subsystems, telecom baseband processing, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1355C-133BGCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications and industrial markets.

The CY7C1355C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for latency-critical networking and telecom applications demanding uninterrupted back-to-back memory access without timing penalties.

FAQ

What is the function of the MODE pin on CY7C1355C-133BGCT?

The MODE pin selects burst order: tied to GND enables linear burst (0,1,2,3), while tied to VDD or left floating enables interleaved burst (0,2,1,3). This setting determines how the internal two-bit burst counter increments using A0/A1, directly impacting memory access patterns for cache-line-aligned data streams in networking processors.

Can CY7C1355C-133BGCT operate with mixed VDD (core) and VDDQ (I/O) voltages?

Yes-VDD is fixed at 3.3V for core logic, while VDDQ supports either 3.3V or 2.5V I/O operation. This dual-voltage capability allows direct interface with both legacy 3.3V FPGAs and modern 2.5V ASICs without external level shifters, reducing BOM count and signal integrity risk in mixed-voltage systems.

How does the ZZ pin affect power consumption and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep mode with typical standby current ≤40 mA while fully retaining stored data. The internal pull-down ensures safe LOW default; floating ZZ is functionally equivalent to LOW, so explicit grounding is not required unless noise immunity is critical in high-EMI environments.

Is JTAG boundary scan supported in all package variants of CY7C1355C-133BGCT?

No-JTAG (TDO, TDI, TCK, TMS) is available only in the 119-ball BGA and 165-ball FBGA packages, as confirmed in Document #38-05539 Page 5–6. The 100-pin TQFP variant omits these pins entirely; boundary scan testability is therefore package-dependent and must be verified against the specific ordering option.