Infineon Technologies CY7C1356C-166AXCT
- Part No.:
- CY7C1356C-166AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1356C-166AXCT.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:4,743
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1356C-166AXCT from Cypress Semiconductor is a 9-Mbit (512K × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 166 MHz with 3.5 ns clock-to-output delay, supports burst reads/writes (linear or interleaved), and uses single 3.3 V VDD with selectable 3.3 V/2.5 V VDDQ I/O supply.
For engineers reviewing the CY7C1356C-166AXCT datasheet, CY7C1356C-166AXCT pinout, CY7C1356C-166AXCT application, or CY7C1356C-166AXCT equivalent, key selection criteria include its zero-wait-state pipelined operation, byte-write capability across four data groups, synchronous self-timed write control, and support for IEEE 1149.1 JTAG boundary scan in the 100-pin TQFP package.
Technical Context
The CY7C1356C implements fully registered synchronous interfaces: all address, control, and data inputs pass through input registers on CLK rising edge; all DQ outputs are latched on the same edge. Its NoBL™ logic eliminates bus latency by enabling back-to-back read/write cycles without wait states, using internal burst counters and ADV/LD-controlled address sequencing.
It features three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) for flexible bank decoding, synchronous CEN to gate CLK without deselection, and asynchronous OE with automatic tristate during write data windows. The MODE pin selects linear or interleaved burst order, and ZZ sleep mode reduces standby current to 40 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (512K × 18 organization), enabling compact high-bandwidth buffer storage for 18-bit data paths. |
| Max Clock Frequency | 166 MHz - supports sustained 166 MT/s throughput with no wait states in pipelined operation. |
| Access Time | 3.5 ns - defines minimum clock-to-output delay for timing-critical read cycles at rated speed. |
| VDD Supply | 3.3 V ± 0.3 V - single-core supply simplifies power delivery versus split-rail SRAMs. |
| VDDQ Supply | 2.5 V or 3.3 V - allows interface voltage matching to adjacent logic (e.g., ASIC I/O banks). |
| Standby Current | 40 mA - low quiescent draw in CMOS standby, critical for thermal management in dense PCB layouts. |
| Burst Capability | Linear or interleaved - configurable via MODE pin to align with host processor's burst addressing scheme. |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant, with standard JEDEC footprint and thermal pad compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Synchronous clock input | Rising-edge-triggered master clock; qualified by CEN to extend cycles without deselection. |
| CEN | Clock enable (active LOW) | Gate for CLK recognition-deassertion pauses operation while retaining internal state. |
| CE1, CE3 | Chip enable (active LOW) | Combined with CE2 (active HIGH) for 3-signal bank selection; enables multi-device memory mapping. |
| BWa, BWb | Byte write select (active LOW) | Controls write masking for DQa/DQPa and DQb/DQPb groups-enables partial-word writes without read-modify-write. |
| ADV/LD | Address advance/load control | HIGH advances internal burst counter; LOW loads new address-supports both sequential and random access modes. |
| MODE | Burst order configuration strap | Pulled HIGH = interleaved burst; pulled LOW = linear burst-matches host CPU or DMA controller addressing pattern. |
| ZZ | Deep sleep mode enable | Active LOW entry into low-power state; reduces ICC to 40 mA while preserving data. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables true back-to-back read/write operations with zero wait states-eliminates pipeline stalls in burst-intensive traffic flows. |
| Fully registered I/O path | All inputs and outputs synchronized to CLK rising edge-ensures deterministic setup/hold timing and simplifies PCB routing. |
| Synchronous self-timed writes | On-chip write timing control removes external write pulse width constraints-reduces timing margining effort in system design. |
| IEEE 1149.1 JTAG boundary scan | Supports production test and board-level diagnostics without additional test fixtures-critical for high-reliability telecom hardware. |
| Flexible I/O voltage (VDDQ) | 2.5 V or 3.3 V selection allows direct interfacing with mixed-voltage SoCs or FPGAs-avoids level-shifter components. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-speed dual-port-like buffer with pipelined reads/writes to sustain 1 Gbps+ line rates. Use Value: 166 MHz zero-wait-state operation ensures frame buffering without latency-induced jitter or dropouts. |
Use Scenario: Holding ATM cell headers and payload segments in OC-48/STM-16 line interface units. IC Role / Device Role / Timing Role: Burst-capable SRAM serving as descriptor cache and temporary payload store for SAR/CSAR engines. Use Value: Interleaved burst mode (via MODE pin) matches ATM cell header alignment requirements for deterministic access. |
| Baseband Processor Cache | Industrial PLC Data Logging |
|
Use Scenario: Acting as instruction/data scratchpad for DSP-based wireless baseband processing in 3G/4G femtocells. IC Role / Device Role / Timing Role: Low-latency memory extension for real-time signal processing pipelines requiring frequent read/write transitions. Use Value: Byte-write capability (BWa/BWb) enables efficient update of individual channel coefficients without full-word overwrites. |
Use Scenario: Buffering sensor acquisition data streams in modular automation controllers before SD card transfer. IC Role / Device Role / Timing Role: Reliable, long-retention SRAM used as volatile staging buffer between ADC FIFO and file-system interface. Use Value: ZZ sleep mode reduces idle power to 40 mA-extends uptime in fanless, convection-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 512K × 18, 15 ns access, 3.3 V only, no VDDQ flexibility, no ZZ mode | Lacks deep-sleep and dual-VDDQ support-less suitable for thermally constrained or mixed-voltage systems | Select when legacy IDT footprint compatibility is required and power optimization is secondary. |
| ISSI IS61WV51218BLL-166TQLI | 512K × 18, 166 MHz, 3.3 V core/I/O, no MODE pin, no JTAG, no parity I/O (DQPx) | Missing burst-order selection and boundary scan-limits use in high-assurance telecom or testable designs | Choose for cost-sensitive industrial applications where JTAG and configurable burst order are unnecessary. |
Compared with IDT72V2115L15PF and IS61WV51218BLL-166TQLI, the CY7C1356C-166AXCT uniquely combines VDDQ voltage flexibility, ZZ sleep mode, and IEEE 1149.1 JTAG-making it optimal for upgradable, thermally managed, and production-testable telecom infrastructure.
Availability
CY7C1356C-166AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and industrial PLC data logging requiring stable component supply across extended product lifecycles.
Supply support for CY7C1356C-166AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.
The CY7C1356C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency buffering in networking and telecom infrastructure where deterministic timing and burst efficiency are mandatory.
FAQ
What is the function of the MODE pin on CY7C1356C-166AXCT?
The MODE pin is a strap input that configures burst address sequencing: tied HIGH enables interleaved burst order (e.g., 0, 2, 4, 6… then 1, 3, 5, 7…), while pulled LOW selects linear burst (0, 1, 2, 3…). This matches host processor or DMA controller burst patterns without firmware overhead, and must be set at power-up before initialization.
Does CY7C1356C-166AXCT support 2.5 V I/O operation?
Yes-CY7C1356C-166AXCT supports 2.5 V VDDQ for its DQ and DQP I/O pins while maintaining 3.3 V VDD for core logic. This allows direct interfacing with 2.5 V FPGA I/O banks or ASICs without external level shifters, verified per datasheet Section "Electrical Characteristics" under "VDDQ Operating Range".
How does the ZZ (sleep) mode reduce power consumption?
In ZZ mode (pin driven LOW), the device enters deep sleep, reducing ICC standby current to 40 mA-unchanged across speed grades. Core logic clocks halt, but SRAM data retention is maintained. Exit requires ZZ HIGH followed by two valid CLK cycles before normal operation resumes, as defined in the "Sleep Mode" section of the datasheet.
Is CY7C1356C-166AXCT pin-compatible with ZBT SRAMs?
Yes-the CY7C1356C-166AXCT is explicitly stated in its datasheet as pin-compatible and functionally equivalent to ZBT SRAMs (e.g., IDT ZBT series), supporting identical control protocols, timing models, and pin assignments in the 100-pin TQFP package, enabling drop-in replacement in existing ZBT-based designs.
CY7C1356C-166AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1356C-166AXCT FAQ
1.How can I place an order for CY7C1356C-166AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1356C-166AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1356C-166AXCT reliable?
The price and inventory of CY7C1356C-166AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1356C-166AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1356C-166AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1356C-166AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1356C-166AXCT?
CY7C1356C-166AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1356C-166AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1356C-166AXCT?
For technical support, including CY7C1356C-166AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1356C-166AXCT requirements.
6.How does Aetrix verify that CY7C1356C-166AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1356C-166AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1356C-166AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1356C-166AXCT?
All CY7C1356C-166AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1356C-166AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1356C-166AXCT part is unused and in its original packaging.
Return procedure for CY7C1356C-166AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1356C-166AXCT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

