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Infineon Technologies CY7C1356C-250AXC

Part No.:
CY7C1356C-250AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1356C-250AXC.pdf
Description:
IC SRAM 9MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,216

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Product details

Overview

CY7C1356C-250AXC from Cypress Semiconductor is a 9-Mbit (512K × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It supports true back-to-back read/write operations at 250 MHz with zero wait states, features 2.8 ns clock-to-output time, single 3.3 V core supply (VDD), and dual-voltage I/O (VDDQ = 3.3 V or 2.5 V).

For engineers reviewing the CY7C1356C-250AXC datasheet, CY7C1356C-250AXC pinout, CY7C1356C-250AXC application, or CY7C1356C-250AXC equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), byte-write granularity (BWa–BWb), synchronous self-timed write control, JTAG boundary-scan support, and TQFP-100 package compatibility with ZBT-family designs.

Technical Context

The CY7C1356C-250AXC implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without pipeline stalls.

Burst addressing is configurable via the MODE strap pin (linear or interleaved), and write operations are controlled synchronously using WE and two byte-write enables (BWa, BWb). Output drivers are automatically tristated during write data phases to prevent bus contention, independent of OE state.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (512K × 18 organization), enabling compact high-bandwidth buffer storage for 18-bit data paths.
Max Clock Frequency 250 MHz - supports sustained 250 MT/s throughput with no wait states in pipelined mode.
Access Time 2.8 ns clock-to-output - ensures sub-4 ns timing margin for 250 MHz system clocks.
VDD Supply 3.3 V ± 0.3 V - compatible with legacy 3.3 V logic domains and mixed-voltage board designs.
VDDQ Supply 2.5 V or 3.3 V - allows interface to either 2.5 V or 3.3 V I/O subsystems without level shifters.
Burst Order Configurable linear or interleaved via MODE pin - matches legacy ZBT or industry-standard burst protocols.
Byte Write Control BWa and BWb enable independent 9-bit writes to DQa/DQPa and DQb/DQPb - supports partial-word updates without read-modify-write.

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), 14 × 20 × 1.4 mm, lead-free (Pb-free) compliant.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master clock; qualified by CEN - enables cycle extension without deselection.
CEN Clock enable (active LOW) Halts clock recognition while preserving internal state - critical for power-aware burst sequencing.
CE1, CE3 Chip enable (active LOW) Combined with CE2 (active HIGH) for 3-signal bank decoding - supports multi-SRAM memory mapping.
BWa, BWb Byte write select (active LOW) Controls 9-bit write segments: BWa → DQa/DQPa, BWb → DQb/DQPb - enables granular 18-bit word updates.
MODE Strap input (not sampled) Hardwired HIGH/LOW at power-up to select interleaved/linear burst order - no runtime reconfiguration.
ADV/LD Address advance/load control HIGH advances internal burst counter; LOW loads new address - enables both sequential and random access modes.
ZZ Deep sleep mode (active LOW) Reduces standby current to ≤40 mA - used for dynamic power gating between traffic bursts.

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) architecture Enables unlimited back-to-back read/write cycles with zero wait states - eliminates pipeline bubbles in burst-intensive systems.
Fully registered I/O path All inputs and outputs synchronized to CLK rising edge - simplifies timing closure in high-speed PCB layouts.
Synchronous self-timed writes On-chip write timing control eliminates external write pulse width constraints - improves reliability across voltage/temperature.
JTAG IEEE 1149.1 boundary scan Supports production test and debug of dense memory interfaces without physical probe access.
Dual-voltage I/O (VDDQ) Independent 2.5 V / 3.3 V I/O rail - enables direct interfacing to FPGA transceivers or ASIC I/O banks with mixed voltage requirements.

Applications

Telecom Line Card Buffering Network Packet Processor Cache

Use Scenario: Storing incoming/outgoing ATM or Ethernet frames in OC-192/STM-64 line cards requiring deterministic latency.

IC Role / Device Role / Timing Role: High-speed dual-port buffer managing full-duplex 18-bit data streams with simultaneous read/write on every clock cycle.

Use Value: 250 MHz zero-wait-state operation sustains 4.5 Gbps aggregate bandwidth (250 MHz × 18 bits), eliminating frame loss under bursty traffic.

Use Scenario: Acting as instruction/data cache for multi-threaded network processors handling IPv4/IPv6 packet classification and forwarding.

IC Role / Device Role / Timing Role: Pipelined SRAM providing synchronized instruction fetch and metadata update with burst-aligned addressing.

Use Value: Linear/interleaved burst modes match processor prefetch patterns, reducing average access latency by ≥35% vs. asynchronous SRAM.

Baseband Signal Processing Industrial Real-Time Controller Memory

Use Scenario: Buffering IQ samples in LTE/5G baseband units where deterministic read/write turnaround is required for FFT/IFFT pipelines.

IC Role / Device Role / Timing Role: Low-latency memory stage synchronizing ADC/DAC data flow with DSP engine clock domain.

Use Value: 2.8 ns clock-to-output and synchronous write enable precise sample alignment within <1 ns jitter window.

Use Scenario: Storing motion control parameters and sensor fusion buffers in CNC controllers requiring guaranteed worst-case response.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory supporting hard real-time PLC scan cycles.

Use Value: ZZ sleep mode reduces idle power to ≤40 mA, extending thermal headroom in sealed industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L15PF 512K × 18, 15 ns access, 133 MHz max frequency, 3.3 V only (no VDDQ flexibility) Lacks MODE-configurable burst order and JTAG scan; lower bandwidth limits use in >200 MHz systems Select when cost sensitivity outweighs speed requirement and burst protocol is fixed.
ISSI IS61WV51218BLL-15BLI 512K × 18, 15 ns access, 133 MHz, 3.3 V core/I/O, no ZZ sleep or ADV/LD control No deep sleep mode or address counter control - unsuitable for power-gated or burst-sequential architectures Choose for simple buffered storage where clock enable and burst advancement are not required.

Compared with IDT72V2115L15PF and IS61WV51218BLL-15BLI, the CY7C1356C-250AXC delivers 88% higher bandwidth (250 vs. 133 MHz), configurable burst ordering, and integrated power management (ZZ mode), making it optimal for next-generation telecom and real-time embedded systems demanding deterministic latency and low dynamic power.

Availability

CY7C1356C-250AXC is available at Aetrix Electronics and suitable for telecom infrastructure, network packet processing, baseband signal conditioning, and industrial real-time control applications requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1356C-250AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1356C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory buffering in systems where back-to-back read/write transitions dominate the access pattern.

FAQ

What is the function of the MODE pin on CY7C1356C-250AXC?

The MODE pin is a static strap input that selects burst addressing order: tied HIGH for interleaved burst, pulled LOW for linear burst. It is sampled only at power-up and cannot be changed dynamically during operation. This configuration determines how the internal address counter increments during burst reads/writes and must match the host controller's expected burst sequence.

Does CY7C1356C-250AXC support 2.5 V I/O operation?

Yes - the device supports 2.5 V I/O operation via the VDDQ supply pin, which is independent of the 3.3 V VDD core supply. When VDDQ = 2.5 V, all I/O signals (DQa–DQb, DQPa–DQPb, BWa–BWb, etc.) operate at 2.5 V logic levels, enabling direct interface with 2.5 V FPGAs or ASICs without external level translation.

How does the ZZ (deep sleep) mode reduce power consumption?

In ZZ mode (activated by pulling ZZ LOW), the device disables internal clocks, memory array biasing, and output drivers, reducing CMOS standby current to ≤40 mA - identical across all speed grades. This state retains data but halts all access; exit requires ZZ HIGH followed by CEN HIGH and a valid CLK edge, with tZZMAX = 20 ns maximum wake-up delay.

Is CY7C1356C-250AXC pin-compatible with ZBT SRAMs?

Yes - the CY7C1356C-250AXC is explicitly designed as pin-compatible and functionally equivalent to standard ZBT SRAMs (e.g., IDT ZBT series). Its pinout, signal naming, timing behavior, and control protocol align with JEDEC ZBT specifications, allowing drop-in replacement in existing ZBT-based designs without layout or firmware changes.

CY7C1356C-250AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
2.8 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1356C-250AXC FAQ

1.How can I place an order for CY7C1356C-250AXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1356C-250AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1356C-250AXC reliable?

The price and inventory of CY7C1356C-250AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1356C-250AXC is usually 5 days.

3.What payment methods are accepted for CY7C1356C-250AXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1356C-250AXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1356C-250AXC?

CY7C1356C-250AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1356C-250AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1356C-250AXC?

For technical support, including CY7C1356C-250AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1356C-250AXC requirements.

6.How does Aetrix verify that CY7C1356C-250AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1356C-250AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1356C-250AXC meets industry standards.

7.What is the process for return or replacement of CY7C1356C-250AXC?

All CY7C1356C-250AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1356C-250AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1356C-250AXC part is unused and in its original packaging.

Return procedure for CY7C1356C-250AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1356C-250AXC Tags

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