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Infineon Technologies CY7C1356C-250AXCT

Part No.:
CY7C1356C-250AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1356C-250AXCT.pdf
Description:
IC SRAM 9MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,441

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Product details

Overview

CY7C1356C-250AXCT from Cypress Semiconductor is a 9-Mbit (512K × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in networking and telecom data paths. It supports true back-to-back read/write operations at 250 MHz with zero wait states, features 2.8 ns clock-to-output time, single 3.3 V core supply (VDD), and dual-voltage I/O (VDDQ = 3.3 V or 2.5 V).

For engineers reviewing the CY7C1356C-250AXCT datasheet, CY7C1356C-250AXCT pinout, CY7C1356C-250AXCT application, or CY7C1356C-250AXCT equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), byte-write select granularity (BWa–BWb), synchronous self-timed write timing, and TQFP-100 package compatibility with ZBT-class systems.

Technical Context

The CY7C1356C implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without pipeline stalls.

Burst capability supports both linear and interleaved orders selected by the MODE strap pin; write operations use synchronous self-timed circuitry qualified by WE and BWa/BWb, while tristate control of DQs is managed synchronously during write data phases and asynchronously via OE - with OE masked during critical timing windows to prevent bus contention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (512K × 18 organization), enabling compact high-bandwidth buffer storage for packet processing engines.
Max Clock Frequency 250 MHz - supports sustained 250 MT/s throughput with no wait states in back-to-back access patterns.
Access Time (tAC) 2.8 ns - defines minimum clock-to-valid-output delay for timing-critical read cycles in FPGA- or ASIC-connected systems.
VDD Supply 3.3 V ± 0.3 V - single-core rail simplifies power delivery versus multi-rail SRAMs; compatible with legacy 3.3 V logic domains.
VDDQ Supply 2.5 V or 3.3 V - allows I/O voltage matching to adjacent logic (e.g., 2.5 V FPGAs or 3.3 V processors) without level shifters.
Burst Order Configurable linear or interleaved via MODE pin - matches standard memory controller burst protocols in switch fabric and baseband subsystems.
Byte Write Control BWa and BWb enable independent 9-bit writes to DQa/DQPa and DQb/DQPb groups - supports partial-word updates without read-modify-write overhead.

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant, with exposed thermal pad (not electrically connected). Pin pitch: 0.5 mm.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master clock; qualified by CEN - enables cycle extension without deselection.
CEN Clock enable (active LOW) Asserting HIGH masks CLK but retains internal state - used for power-aware clock gating in burst-limited traffic.
CE1, CE3 Chip enable (active LOW) Combined with CE2 (active HIGH) for 3-signal bank decoding - supports multi-SRAM memory mapping in large buffers.
BWa, BWb Byte write select (active LOW) Control 9-bit write segments: BWa → DQa/DQPa, BWb → DQb/DQPb - enables sub-word writes aligned to 18-bit data path.
ADV/LD Address advance/load control HIGH advances internal burst counter; LOW loads new address - essential for non-sequential burst initiation in packet header parsing.
MODE Burst order configuration strap Hardwired HIGH → interleaved; LOW → linear - sets burst sequence to match memory controller expectations without register programming.
ZZ Deep sleep mode enable Active LOW entry into low-power ZZ mode - reduces standby current to ≤40 mA while preserving data retention.

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) architecture Enables unlimited true back-to-back read/write operations with zero wait states - eliminates pipeline bubbles in high-speed packet forwarding.
Fully registered I/O path All inputs and outputs synchronized to CLK rising edge - ensures deterministic setup/hold timing across temperature and voltage corners.
Synchronous self-timed writes On-chip write timing control eliminates external write pulse width constraints - simplifies interface design with FPGA or ASIC controllers.
IEEE 1149.1 JTAG boundary scan Supports in-system testability and interconnect verification in dense PCB layouts - critical for telecom line card manufacturing.
Dual VDDQ support (2.5 V / 3.3 V) Allows direct interfacing to mixed-voltage SoCs without external level translators - reduces BOM count and signal integrity risk.

Applications

Packet Buffer in Ethernet Switch ASIC Baseband Memory in 4G LTE Modem

Use Scenario: Temporary storage of ingress/egress Ethernet frames in a 10-Gbps switch fabric, requiring rapid read-modify-write for VLAN tagging and QoS marking.

IC Role / Device Role / Timing Role: High-speed pipelined SRAM acting as frame buffer with deterministic 2.8 ns read latency and zero-wait-state write turnaround.

Use Value: Enables full-line-rate switching at 250 MHz clock rate without stalling the packet processor - directly supporting wire-speed forwarding performance.

Use Scenario: Storing channel estimation coefficients and soft-decision metrics during turbo decoding in an LTE physical layer processor.

IC Role / Device Role / Timing Role: Burst-capable memory providing interleaved or linear access to coefficient arrays under tight timing deadlines from the decoder engine.

Use Value: Matches burst order requirements of the baseband DSP's memory controller - eliminating software-managed address calculation overhead.

PCIe Endpoint Buffer Industrial Real-Time Controller Cache

Use Scenario: Acting as a transaction reorder buffer between PCIe root complex and local FPGA-based accelerators handling DMA bursts.

IC Role / Device Role / Timing Role: Synchronous SRAM with CEN-controlled clock gating and ZZ sleep mode - manages power during idle PCIe link periods.

Use Value: Reduces average system power by >60% during low-traffic intervals while maintaining sub-3 ns access for burst resumption.

Use Scenario: Holding real-time motion control instruction tables and sensor fusion data in a CNC machine controller with deterministic jitter < 1 ns.

IC Role / Device Role / Timing Role: Fully registered SRAM providing cycle-exact read/write predictability - critical for closed-loop servo timing compliance.

Use Value: Guarantees worst-case 2.8 ns tAC across industrial temperature range (–40°C to +85°C), meeting IEC 61800-3 timing safety margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V251L15PF 512K × 18, 15 ns access, 133 MHz max frequency, 3.3 V only (no VDDQ flexibility) Lacks NoBL™ architecture - requires wait states between reads/writes; unsuitable for zero-latency burst chaining Select only if system clock ≤133 MHz and burst coherency is not required.
ISSI IS61WV51218BLL-15TLI 512K × 18, 15 ns access, 133 MHz, asynchronous OE, no MODE or ADV/LD pins No burst order control or pipelined address advancement - limited to single-access or fixed-burst modes Choose only for cost-sensitive, non-pipelined buffer applications where timing margin >12 ns is acceptable.

Compared with IDT72V251L15PF and IS61WV51218BLL-15TLI, CY7C1356C-250AXCT delivers 87% higher bandwidth (250 vs. 133 MHz), eliminates wait-state penalties via NoBL™, and provides configurable burst sequencing - making it uniquely suited for latency-constrained telecom and real-time control buffers.

Availability

CY7C1356C-250AXCT is available at Aetrix Electronics and suitable for high-speed packet buffering, baseband signal processing, PCIe endpoint acceleration, and industrial real-time control applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1356C-250AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1356C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory interfaces in networking infrastructure and real-time embedded systems.

FAQ

What is the function of the MODE pin on CY7C1356C-250AXCT?

The MODE pin is a static configuration input that selects burst order: tied HIGH for interleaved burst addressing (e.g., 0, 2, 4, 6…), pulled LOW for linear burst (e.g., 0, 1, 2, 3…). It is sampled at power-up and remains latched; no dynamic reconfiguration is supported during operation.

Does CY7C1356C-250AXCT support 2.5 V I/O operation?

Yes - VDDQ may be supplied at either 2.5 V or 3.3 V, independently of the 3.3 V VDD core supply. This allows direct interfacing with 2.5 V FPGAs or ASICs without level-shifting circuitry, provided VDDQ tolerances (±0.2 V) and drive strength requirements are met per the datasheet AC specs.

How does the ZZ (sleep) mode reduce power consumption?

In ZZ mode (activated by pulling ZZ LOW), the device enters deep sleep: internal clocks halt, output drivers disable, and standby current drops to ≤40 mA. Data retention is maintained across the full industrial temperature range (–40°C to +85°C), and wake-up latency is one clock cycle after ZZ deassertion.

Can CY7C1356C-250AXCT operate without using the ADV/LD pin?

Yes - when ADV/LD is held HIGH continuously, the device operates in auto-increment burst mode. However, for non-sequential accesses or burst termination, ADV/LD must be driven LOW to load a new starting address; omitting this causes incorrect address progression and data corruption.

CY7C1356C-250AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
2.8 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1356C-250AXCT FAQ

1.How can I place an order for CY7C1356C-250AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1356C-250AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1356C-250AXCT reliable?

The price and inventory of CY7C1356C-250AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1356C-250AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1356C-250AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1356C-250AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1356C-250AXCT?

CY7C1356C-250AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1356C-250AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1356C-250AXCT?

For technical support, including CY7C1356C-250AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1356C-250AXCT requirements.

6.How does Aetrix verify that CY7C1356C-250AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1356C-250AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1356C-250AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1356C-250AXCT?

All CY7C1356C-250AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1356C-250AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1356C-250AXCT part is unused and in its original packaging.

Return procedure for CY7C1356C-250AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1356C-250AXCT Tags

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