Infineon Technologies CY7C1356CV25-166AXCT
- Part No.:
- CY7C1356CV25-166AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1356CV25-166AXCT.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:3,650
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1356CV25-166AXCT from Infineon Technologies (formerly Cypress) is a 2.5 V, 512K × 18 synchronous pipelined SRAM with NoBL™ architecture, supporting zero-wait-state 166 MHz bus operation, 3.5 ns maximum access time, and synchronous self-timed writes. It serves as high-throughput data buffer in network packet processors requiring back-to-back read/write transitions.
For engineers reviewing the CY7C1356CV25-166AXCT datasheet, CY7C1356CV25-166AXCT pinout, CY7C1356CV25-166AXCT application, or CY7C1356CV25-166AXCT equivalent, key selection criteria include burst mode support (linear/interleaved), byte-write capability (BWa–BWb), JTAG boundary scan compliance, and 100-pin TQFP package compatibility with legacy ZBT™ designs.
Technical Context
The device implements fully registered pipelined I/O with rising-edge clock synchronization for all inputs and outputs, enabling true consecutive read/write cycles without bus latency. Its NoBL™ logic eliminates asynchronous OE dependency via internally self-timed output buffer control.
It supports three chip enables (CE1–CE3) for bank selection, clock enable (CEN) for cycle suspension, and ZZ sleep mode for low-power standby. Burst addressing follows linear or interleaved order, with ADV/LD controlling address latch timing during burst sequences.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (512K × 18 configuration) |
| Max Clock Frequency | 166 MHz - defines maximum sustained data transfer rate on synchronous bus |
| Access Time | 3.5 ns - determines minimum clock-to-output delay for timing-critical interfaces |
| Supply Voltage | 2.5 V ± 0.2 V - single-rail operation compatible with 2.5 V logic families |
| Operating Current | 180 mA max - sets thermal and power delivery requirements for PCB layout |
| Standby Current | 40 mA max - defines quiescent power draw during CEN-suspended or ZZ sleep mode |
| Burst Capability | Linear or interleaved - enables optimized memory access patterns for cache-like behavior |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm, lead-free (Pb-free) compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Primary synchronous clock input | Rising-edge-triggered master timing reference for all registered I/O operations |
| CEN | Clock enable control | Deassertion suspends internal clock domain, extending previous cycle without reset |
| WE | Write enable | Active-low signal qualifying write operations synchronized to CLK edge |
| BWa, BWb | Byte write selects | Independent 9-bit write masking for 18-bit data bus (BWa = DQ[8:0], BWb = DQ[17:9]) |
| CE1, CE2, CE3 | Chip enable inputs | Three-level synchronous enable hierarchy for multi-bank memory system partitioning |
| ADV/LD | Address valid/load control | Qualifies address latching during burst sequences; toggles between address advance and reload modes |
| ZZ | Deep sleep mode control | Asynchronous entry into ultra-low-power state (<40 mA standby current) |
| DQ[0:17] | Data I/O bus | 18-bit bidirectional, fully registered interface with synchronous tri-state control during writes |
| OE | Output enable | Asynchronous control for output buffer tri-state; overridden by internal write sequencing |
| VDD, VDDQ | Power supplies | VDD = core logic (2.5 V); VDDQ = I/O drivers (2.5 V) - separate pins reduce switching noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables unlimited back-to-back read/write operations with zero wait states, eliminating pipeline stalls in burst-intensive systems |
| Fully registered I/O | All address, control, and data signals pass through clocked registers, ensuring deterministic setup/hold timing across process/voltage/temperature |
| Synchronous self-timed writes | On-chip write timing control eliminates external write pulse width constraints and simplifies controller design |
| JTAG boundary scan (IEEE 1149.1) | Supports in-system testability and interconnect verification without requiring additional test fixtures |
| ZBT™ pin and functional compatibility | Direct drop-in replacement for ZBT SRAMs in existing board designs, preserving layout and firmware |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency data buffer interfacing directly with MAC and switch fabric controllers. Use Value: 166 MHz zero-wait-state operation sustains 3-Gbps sustained throughput on 18-bit bus, reducing packet queuing delay. |
Use Scenario: Serving as descriptor memory and temporary frame storage in 10G/25G optical line cards. IC Role / Device Role / Timing Role: Synchronous burst-access memory supporting DMA engines with linear/interleaved addressing. Use Value: Byte-write capability (BWa/BWb) enables efficient partial descriptor updates without full-word overwrites. |
| Baseband Processing Cache | Industrial PLC Data Exchange |
|
Use Scenario: Holding intermediate FFT and channel estimation results in LTE/5G baseband subsystems. IC Role / Device Role / Timing Role: Pipelined SRAM acting as low-latency scratchpad between DSP cores and shared memory controllers. Use Value: Fully registered I/O ensures timing closure at 166 MHz across wide temperature ranges (–40°C to +85°C). |
Use Scenario: Buffering real-time I/O status and control command sequences in modular programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic-access memory supporting cyclic executive timing with guaranteed 3.5 ns access. Use Value: ZZ sleep mode reduces standby power to <40 mA during idle cycles, meeting industrial energy efficiency targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356CV25-200AXCT | Higher speed grade: 200 MHz max clock, 3.2 ns access time | Requires tighter PCB trace length matching and higher-current 2.5 V supply (220 mA max) | Select when system timing budget demands sub-3.5 ns latency and clock frequency exceeds 166 MHz |
| AS7C31026B-166JCIN | Same density (512K × 18), but asynchronous interface; no NoBL™ or burst logic | Lacks pipelined operation and burst addressing - requires wait-state insertion in controller firmware | Consider only for cost-sensitive, non-burst applications where timing margin allows added latency |
Compared with CY7C1356CV25-200AXCT, this 166 MHz variant trades peak bandwidth for relaxed signal integrity and lower power; versus AS7C31026B-166JCIN, it delivers deterministic zero-wait-state performance essential for real-time packet processing.
Availability
CY7C1356CV25-166AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache requiring stable component supply across extended product lifecycles.
Supply support for CY7C1356CV25-166AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ SRAMs, for industrial, networking, and communications infrastructure.
This device belongs to the Cypress NoBL™ SRAM product line, engineered specifically for zero-latency, burst-capable data buffering in high-speed digital systems where deterministic timing and back-to-back transaction efficiency are critical.
FAQ
What is the difference between CY7C1356CV25-166AXCT and CY7C1354CV25-166AXCT?
CY7C1356CV25-166AXCT is configured as 512K × 18 (9 Mbit), while CY7C1354CV25-166AXCT is 256K × 36 (9 Mbit). They share identical timing, packaging, and NoBL™ architecture but differ in data bus width and byte-write pin count: CY7C1356 uses BWa/BWb for 9-bit masking; CY7C1354 uses BWa–BWd for four 9-bit lanes. Pinouts are not interchangeable.
Does CY7C1356CV25-166AXCT support interleaved burst mode?
Yes, the device supports both linear and interleaved burst addressing orders, selected via the MODE pin during initialization. Interleaved mode aligns with industry-standard cache line access patterns and is commonly used in network processor interfaces requiring spatial locality optimization.
Can the ZZ pin be left unconnected in normal operation?
No. The ZZ pin must be actively driven high (VDD) to disable deep sleep mode during active operation. Leaving it floating risks unintended entry into ZZ mode due to noise susceptibility, causing loss of data retention and bus responsiveness. A pull-up resistor to VDD is recommended if not controlled by system logic.
Is JTAG boundary scan enabled by default on CY7C1356CV25-166AXCT?
JTAG is implemented per IEEE 1149.1 and enabled by default; no configuration fuse or strap is required. Test access is available immediately after power-up, provided TCK, TMS, TDI, and TDO are properly terminated and clocked. The feature can be disabled via instruction register programming if needed for security or noise reduction.
CY7C1356CV25-166AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1356CV25-166AXCT FAQ
1.How can I place an order for CY7C1356CV25-166AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1356CV25-166AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1356CV25-166AXCT reliable?
The price and inventory of CY7C1356CV25-166AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1356CV25-166AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1356CV25-166AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1356CV25-166AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1356CV25-166AXCT?
CY7C1356CV25-166AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1356CV25-166AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1356CV25-166AXCT?
For technical support, including CY7C1356CV25-166AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1356CV25-166AXCT requirements.
6.How does Aetrix verify that CY7C1356CV25-166AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1356CV25-166AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1356CV25-166AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1356CV25-166AXCT?
All CY7C1356CV25-166AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1356CV25-166AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1356CV25-166AXCT part is unused and in its original packaging.
Return procedure for CY7C1356CV25-166AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1356CV25-166AXCT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

