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Infineon Technologies CY7C1357C-133AXI

Part No.:
CY7C1357C-133AXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1357C-133AXI.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,783

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Product details

Overview

CY7C1357C-133AXI from Cypress Semiconductor is a 9-Mbit (512K × 18) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput back-to-back read/write operations in networking and telecom data paths. It operates at 133 MHz with zero wait states, delivers 6.5 ns clock-to-output delay, supports linear/interleaved burst modes via MODE pin, and features three synchronous chip enables (CE1/CE2/CE3) for depth expansion in packet buffer applications.

For engineers reviewing the CY7C1357C-133AXI datasheet, CY7C1357C-133AXI pinout, CY7C1357C-133AXI application, or CY7C1357C-133AXI equivalent, this device serves as a low-latency, burst-capable SRAM for FPGA co-processor interfaces, switch fabric buffers, and real-time protocol stack memory where deterministic timing and byte-selectable writes are critical.

Technical Context

The CY7C1357C-133AXI implements a synchronous, registered-input flow-through architecture with on-chip burst counter driven by A0/A1 and controlled by ADV/LD and MODE pins. All address, control, and write-enable signals are latched on the rising edge of CLK when CEN is active low.

It uses self-timed synchronous write circuitry with four byte-write selects (BWA–BWD), asynchronous OE for output control, and ZZ input for non-time-critical sleep mode. Output drivers are automatically tri-stated during write data cycles to prevent bus contention, independent of OE state.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (512K × 18 configuration)
Max Clock Frequency 133 MHz - enables one data transfer per clock cycle without wait states
Access Time (tCDV) 6.5 ns - maximum clock-to-output delay at 133 MHz, defining minimum read latency
I/O Voltage (VDDQ) 2.5 V or 3.3 V - configurable I/O supply enabling interface compatibility with multiple logic families
Burst Mode Control MODE pin strapping - LOW = linear burst, HIGH/floating = interleaved burst
Power-down Mode ZZ pin active-HIGH - reduces standby current while preserving data integrity
JTAG Support IEEE 1149.1 compliant - TDI/TDO/TCK/TMS pins available in BGA packages for boundary scan testing

Pinout & Package

Package: 100-pin TQFP (JEDEC standard, lead-free), also available in 119-ball BGA and 165-ball FBGA. This entry corresponds to the -133AXI variant in 100-pin TQFP.

Pin/Terminal Circuit Role Design Meaning
A0, A1 Synchronous Address Inputs Latched on CLK rise; feed 2-bit burst counter for linear/interleaved addressing
BWA–BWD Synchronous Byte Write Enables Active-low, qualified with WE; enable selective 18-bit word writes in 4×4.5-bit groups
CE1, CE3 Synchronous Chip Enable (active LOW) Combined with CE2 (active HIGH) for 3-signal depth expansion without external logic
ADV/LD Synchronous Address Advance/Load HIGH advances internal burst counter; LOW loads new address - required after deselect
CLK, CEN Clock Input / Clock Enable CEN LOW enables CLK recognition; deasserting CEN extends previous cycle without deselection
OE Asynchronous Output Enable Active-low; overrides internal tri-state control during reads but masked during writes
ZZ Asynchronous Sleep Input Active-HIGH places device in low-power retention mode; internal pull-down ensures safe default
DQ0–DQ17, DQPA–DQPD Bidirectional Data I/O 18 data + 4 parity lines; direction controlled by OE and internal write sequencing logic

Key Features

Feature Design Value
No Bus Latency™ Architecture Eliminates dead cycles between consecutive read/write operations - enables true back-to-back transfers at full 133 MHz
Registered Flow-Through Operation All inputs synchronized to CLK rising edge; output data aligned to next clock edge - simplifies timing closure in FPGA-based systems
Self-Timed Synchronous Writes On-chip write timing control removes need for external write pulse generation or OE coordination
Configurable Burst Order MODE pin selects linear (cache-friendly) or interleaved (DSP/FFT-friendly) burst sequences without firmware change
Automatic Output Tri-State Management Outputs disabled during write data phase regardless of OE state - prevents bus contention in shared-memory architectures

Applications

Packet Buffer Memory FPGA Co-Processor Interface

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate throughput requirements.

IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM providing deterministic 6.5 ns read access and byte-selectable writes for header modification.

Use Value: Enables zero-wait-state back-to-back read-modify-write cycles essential for deep packet inspection and QoS tagging at 10 Gbps+ rates.

Use Scenario: Serving as local scratchpad memory between Xilinx Virtex or Intel Stratix FPGAs and external processors in real-time signal processing pipelines.

IC Role / Device Role / Timing Role: Synchronous flow-through SRAM interfacing directly to FPGA I/O banks with matched 2.5 V/3.3 V VDDQ support.

Use Value: Registered inputs and clock-aligned outputs reduce FPGA timing closure effort; burst modes accelerate FFT coefficient loading and filter tap updates.

Telecom Line Card Buffer Protocol Stack Acceleration

Use Scenario: Buffering ATM cells or SONET/SDH frames in carrier-grade line cards requiring ECC-capable, low-power memory with JTAG testability.

IC Role / Device Role / Timing Role: 18-bit wide SRAM with DQPX parity lines used for error-detectable frame storage; JTAG pins support in-system verification.

Use Value: ZZ sleep mode cuts standby power by >90% during idle periods; three CE pins simplify multi-bank buffering across OC-192 interfaces.

Use Scenario: Hosting TCP/IP or RTP protocol state tables in embedded network appliances where memory access predictability impacts jitter and latency.

IC Role / Device Role / Timing Role: Deterministic 133 MHz operation ensures fixed-cycle memory access for connection tracking and session table lookups.

Use Value: NoBL™ architecture guarantees consistent 6.5 ns tCDV across temperature/voltage - eliminates worst-case timing margining in real-time stacks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L133PFI 512K × 18, 133 MHz, 3.3 V only, no ZZ sleep mode, no MODE-selectable burst order Lacks low-power retention and burst flexibility; requires external OE management Choose if JTAG testability and sleep mode are unnecessary and cost is primary constraint
ISSI IS61WV51218BLL-133TQLI 512K × 18, 133 MHz, 3.3 V core/I/O, no BGA JTAG, no ADV/LD-controlled burst advance Fixed linear burst only; no interleaved mode; lacks dedicated sleep pin (relies on CE power-down) Prefer when board space allows larger TQFP footprint and burst mode flexibility is not required

Compared with IDT72V2115L133PFI and IS61WV51218BLL-133TQLI, the CY7C1357C-133AXI uniquely integrates ZZ sleep, MODE-configurable burst, and automatic OE masking - delivering superior power efficiency, timing determinism, and interface adaptability in resource-constrained telecom and FPGA-adjacent designs.

Availability

CY7C1357C-133AXI is available at Aetrix Electronics and suitable for packet buffer memory, FPGA co-processor interfaces, telecom line card buffers, and protocol stack acceleration requiring stable component supply and long-term industrial availability.

Supply support for CY7C1357C-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

The CY7C1357C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, burst-capable memory subsystems in high-speed networking and real-time embedded applications.

FAQ

What is the function of the MODE pin on CY7C1357C-133AXI?

The MODE pin selects burst sequence behavior: tied LOW to ground enables linear burst order (0,1,2,3), while tied HIGH to VDD or left floating selects interleaved burst (0,2,1,3). This setting is sampled at power-up and remains static during operation - no dynamic reconfiguration is supported. The burst counter uses A0/A1 bits exclusively, and wraps on overflow.

How does the ZZ pin affect power consumption and data retention?

Asserting ZZ HIGH places the device in a non-time-critical sleep mode that reduces ICC standby current to ≤40 mA while maintaining full data retention across the industrial temperature range (–40°C to +85°C). The pin has an internal pull-down, so floating defaults to active-LOW normal operation. Exit from ZZ mode requires ≥100 ns stabilization before first access.

Can CY7C1357C-133AXI operate with mixed VDD (core) and VDDQ (I/O) voltages?

Yes - VDD must be 3.3 V ±0.3 V for core logic, while VDDQ may be independently set to either 2.5 V ±0.2 V or 3.3 V ±0.3 V to match interfacing logic families. This dual-supply design allows direct connection to both 2.5 V FPGAs and 3.3 V microcontrollers without level shifters, provided VDDQ stability meets datasheet ripple limits (≤50 mV p-p).

Is JTAG boundary scan supported in all package variants of CY7C1357C-133AXI?

No - JTAG (TDO/TDI/TCK/TMS) is only implemented in the 119-ball BGA and 165-ball FBGA packages. The 100-pin TQFP variant (including -133AXI) omits these pins entirely. Boundary scan capability is therefore package-dependent and must be verified against the specific ordering part number's pinout diagram before PCB layout.

CY7C1357C-133AXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1357C-133AXI FAQ

1.How can I place an order for CY7C1357C-133AXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1357C-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1357C-133AXI reliable?

The price and inventory of CY7C1357C-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1357C-133AXI is usually 5 days.

3.What payment methods are accepted for CY7C1357C-133AXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1357C-133AXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1357C-133AXI?

CY7C1357C-133AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1357C-133AXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1357C-133AXI?

For technical support, including CY7C1357C-133AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1357C-133AXI requirements.

6.How does Aetrix verify that CY7C1357C-133AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1357C-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1357C-133AXI meets industry standards.

7.What is the process for return or replacement of CY7C1357C-133AXI?

All CY7C1357C-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1357C-133AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1357C-133AXI part is unused and in its original packaging.

Return procedure for CY7C1357C-133AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1357C-133AXI Tags

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