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Infineon Technologies CY7C1357C-133AXIT

Part No.:
CY7C1357C-133AXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1357C-133AXIT.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,976

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Product details

Overview

CY7C1357C-133AXIT from Cypress Semiconductor is a 9-Mbit synchronous flow-through burst SRAM (512K × 18 organization) with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It supports true back-to-back read/write operations at 133 MHz with zero wait states, 6.5 ns clock-to-output delay, and 3.3 V/2.5 V I/O (VDDQ) compatibility - enabling seamless integration into DDR-adjacent data paths requiring deterministic latency.

For engineers reviewing the CY7C1357C-133AXIT datasheet, CY7C1357C-133AXIT pinout, CY7C1357C-133AXIT application, or CY7C1357C-133AXIT equivalent, key selection criteria include synchronous burst capability (linear/interleaved), three chip enables for depth expansion, registered address/data inputs, byte write control (BWA–BWD), and JTAG boundary-scan support in BGA packages.

Technical Context

The CY7C1357C-133AXIT implements a fully synchronous, flow-through pipeline where all inputs (address, WE, BWX, ADV/LD, CE1–CE3, CEN) are registered on the rising edge of CLK. Its NoBL™ architecture eliminates bus dead cycles by enabling consecutive read/write transitions without interlock insertion - critical for packet buffering in switch fabric controllers.

Burst operation is controlled by the MODE strap (linear vs. interleaved) and ADV/LD signal, with A0/A1 feeding a two-bit counter. Write operations use on-chip self-timed logic, while OE provides asynchronous output enable and automatic tri-state during write data phases to prevent bus contention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 18 bits - delivers 9-Mbit density optimized for 18-bit data buses in telecom control planes.
Max Clock Frequency 133 MHz - enables sustained 133 MT/s throughput with no wait states between consecutive accesses.
Access Time (tCDV) 6.5 ns - defines maximum clock-to-valid-output delay, ensuring timing closure in sub-8 ns memory interfaces.
VDDQ Supply Range 2.5 V or 3.3 V - allows interoperability with both LVTTL and SSTL-2 I/O standards without level shifters.
Byte Write Control Four independent BWX inputs (BWA–BWD) - enables selective 16-bit writes within 18-bit word, reducing bus traffic and power.
Power Management ZZ sleep mode (asynchronous, active-HIGH) - reduces standby current to <40 mA while preserving data integrity.
JTAG Support IEEE 1149.1-compliant TDI/TDO/TCK/TMS - enables in-system test and debug of memory subsystems on BGA packages.

Pinout & Package

Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), lead-free and RoHS-compliant. Pinout validated per Cypress Document #38-05539 Rev. *E, Pages 4–5.

Pin/Terminal Circuit Role Design Meaning
A0, A1 Synchronous Address Inputs Latched on CLK rise; feed internal 2-bit burst counter for linear/interleaved addressing.
BWA–BWD Synchronous Byte Write Enables Active-LOW, qualified by WE; control 16-bit write masking within 18-bit DQ/DQP interface.
CE1, CE3 Synchronous Chip Enable (active-LOW) Paired with CE2 (active-HIGH) for 3-signal depth expansion without external logic.
ADV/LD Synchronous Address Advance/Load HIGH advances burst counter; LOW loads new address - required after deselect to reset access sequence.
CEN Synchronous Clock Enable Active-LOW; masks CLK without deselecting device - extends previous cycle for timing margining.
OE Asynchronous Output Enable Active-LOW; overrides internal control to force output drivers - automatically tri-stated during write data phase.
ZZ Asynchronous Sleep Input Active-HIGH; places device in low-power retention mode (<40 mA) with no clock dependency.
MODE Strap Pin for Burst Order GND = linear burst; VDD/floating = interleaved - sets burst sequence without register programming.

Key Features

Feature Design Value
No Bus Latency™ Architecture Eliminates dead cycles between write and read - enables 100% bus utilization at 133 MHz in burst-heavy workloads.
Registered Flow-Through Interface All inputs synchronized to CLK rise - simplifies timing analysis and eliminates setup/hold violations in FPGA-attached systems.
Synchronous Self-Timed Writes On-chip write completion detection - removes need for external write acknowledge or wait-state generation logic.
Three Chip Enables (CE1/CE2/CE3) Supports 2:1 or 3:1 depth expansion with single-cycle address decode - reduces glue logic in multi-SRAM banks.
Automatic Output Tri-State Control Outputs disabled during write data phase regardless of OE state - prevents bus contention without external bus keeper design.

Applications

Packet Buffering in Switch Fabric Controllers Line Card Memory for Telecom Equipment

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches operating at OC-192 line rates.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer providing deterministic 6.5 ns read access and back-to-back write-read turnaround for header processing pipelines.

Use Value: Eliminates wait states during header rewrite operations, increasing effective packet throughput by up to 22% versus ZBT SRAMs in burst-limited configurations.

Use Scenario: Frame assembly/disassembly buffers in SONET/SDH add-drop multiplexers requiring 18-bit parallel data paths.

IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly to FPGA-based framer logic with 133 MHz clock domain alignment.

Use Value: Linear/interleaved burst modes match SONET STS-48 frame structures, reducing address bus toggling and dynamic power by 35%.

Baseband Processing in Wireless BTS Real-Time Protocol Stack Buffers

Use Scenario: Temporary storage of channelized IQ samples and control messages in 3G/4G base transceiver station digital front ends.

IC Role / Device Role / Timing Role: Low-jitter, flow-through memory supporting simultaneous read (for FFT input) and write (for ADC capture) with no pipeline stalls.

Use Value: ZZ sleep mode enables rapid power gating between TDMA time slots, cutting average standby current to <15 mW.

Use Scenario: Message queue and state table storage in embedded TCP/IP stacks running on ARM9-based network processors.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM acting as shared memory between CPU core and DMA engine for zero-copy socket I/O.

Use Value: Byte write capability (BWA–BWD) allows atomic 16-bit updates to TCP sequence numbers without full-word read-modify-write cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L133PFI 512K × 18, 133 MHz, but uses QDR-II interface with separate read/write clocks - requires dual-clock domain management. Designed for QDR memory controllers; incompatible with standard synchronous SRAM timing models. Select only if system already implements QDR-II PHY and requires higher peak bandwidth (266 MT/s read + 266 MT/s write).
ISSI IS61WV51218BLL-133TQLI 512K × 18, 133 MHz, but lacks NoBL™ architecture - inserts one-cycle gap between write-read transitions. Requires wait-state insertion in burst-intensive protocols like ATM cell processing. Prefer when cost sensitivity outweighs latency-critical throughput requirements and board space permits additional timing margining.

Compared with IDT72V2115L133PFI and IS61WV51218BLL-133TQLI, the CY7C1357C-133AXIT uniquely delivers true zero-wait-state back-to-back operation using a single clock domain and standard SRAM timing - reducing FPGA logic overhead and simplifying timing closure in legacy synchronous bus architectures.

Availability

CY7C1357C-133AXIT is available at Aetrix Electronics and suitable for packet buffering in switch fabric controllers, line card memory for telecom equipment, baseband processing in wireless BTS, and real-time protocol stack buffers requiring stable component supply across extended production lifecycles.

Supply support for CY7C1357C-133AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1357C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-bandwidth memory subsystems in telecom infrastructure where zero-wait-state burst performance and synchronous timing predictability are mandatory.

FAQ

What is the function of the MODE pin on CY7C1357C-133AXIT?

The MODE pin is a static strap input that selects burst order: tied to GND for linear burst sequence (0,1,2,3), or to VDD/floating for interleaved burst (0,2,1,3). It is sampled only at power-up or reset and does not require dynamic control. This eliminates configuration registers and simplifies PCB layout by removing the need for GPIO-driven mode selection.

How does the ZZ pin interact with clock and chip enable signals?

The ZZ pin operates asynchronously and independently of CLK, CEN, or CE signals. When asserted HIGH, it forces the device into low-power sleep mode regardless of clock activity or chip select status - preserving data while drawing <40 mA. The internal pull-down ensures safe default LOW state during power-up, and no external pull-down resistor is required.

Can CY7C1357C-133AXIT be used with a 2.5 V core voltage (VDD)?

No - VDD must be 3.3 V ± 0.3 V per datasheet specification. Only VDDQ (I/O supply) supports dual-voltage operation at either 2.5 V or 3.3 V. Using 2.5 V on VDD violates absolute maximum ratings and will cause functional failure, including corrupted address latching and invalid burst counter behavior.

Is JTAG boundary scan supported in the TQFP package of CY7C1357C-133AXIT?

No - JTAG pins (TDO, TDI, TCK, TMS) are physically absent in the 100-pin TQFP package. They are only available in the 119-ball and 165-ball BGA variants. For TQFP-based designs requiring test access, external boundary-scan must be implemented via dedicated test points or alternate test methodologies.

CY7C1357C-133AXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1357C-133AXIT FAQ

1.How can I place an order for CY7C1357C-133AXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1357C-133AXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1357C-133AXIT reliable?

The price and inventory of CY7C1357C-133AXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1357C-133AXIT is usually 5 days.

3.What payment methods are accepted for CY7C1357C-133AXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1357C-133AXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1357C-133AXIT?

CY7C1357C-133AXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1357C-133AXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1357C-133AXIT?

For technical support, including CY7C1357C-133AXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1357C-133AXIT requirements.

6.How does Aetrix verify that CY7C1357C-133AXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1357C-133AXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1357C-133AXIT meets industry standards.

7.What is the process for return or replacement of CY7C1357C-133AXIT?

All CY7C1357C-133AXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1357C-133AXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1357C-133AXIT part is unused and in its original packaging.

Return procedure for CY7C1357C-133AXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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