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Infineon Technologies CY7C1360C-200BGC

Part No.:
CY7C1360C-200BGC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
119-BGA
Datasheet:
AetrixCY7C1360C-200BGC.pdf
Description:
IC SRAM 9MBIT PARALLEL 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,734

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Product details

Overview

CY7C1360C-200BGC from Infineon Technologies (formerly Cypress) is a 9-Mbit pipelined synchronous SRAM with 256K × 36 organization, supporting 200 MHz bus operation, 3.3 V core supply (VDD), and 2.5 V/3.3 V I/O (VDDQ). It features registered inputs/outputs, IEEE 1149.1 JTAG boundary scan, and is packaged in a Pb-free 100-pin TQFP. It serves as high-speed buffer memory in network packet processors and telecom line cards.

For engineers reviewing the CY7C1360C-200BGC datasheet, CY7C1360C-200BGC pinout, CY7C1360C-200BGC application, or CY7C1360C-200BGC equivalent, key selection criteria include clock-to-output timing (3.0 ns), burst mode flexibility (Intel Pentium® interleaved/linear), synchronous self-timed writes, and dual-voltage I/O compatibility for seamless integration with 2.5 V or 3.3 V logic domains.

Technical Context

The CY7C1360C-200BGC implements a fully synchronous, pipelined architecture where all address, data, and control inputs-including CE1/CE2/CE3, ADSP/ADSC, ADV, BWA–BWD, GW, and BWE-are registered on the rising edge of CLK. Internal burst addressing is generated by a two-bit counter controlled by ADV and MODE pins.

It supports byte-selectable writes (1-, 2-, or 4-byte width) via dedicated byte write enables, synchronous self-timed write cycles, asynchronous output enable (OE), and low-power ZZ sleep mode. All I/Os comply with JEDEC JESD8-5, enabling interoperability with both 2.5 V and 3.3 V systems without level shifters.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (256K × 36 bits) - provides full-word parallel access for 36-bit data buses in high-throughput control plane applications.
Max Clock Frequency 200 MHz - enables sustained 200 MT/s throughput with pipelined read/write cycles for real-time packet buffering.
Access Time (tCO) 3.0 ns - guarantees sub-5 ns clock-to-output delay critical for meeting tight setup/hold timing in 200 MHz system interfaces.
Core Supply Voltage 3.3 V ±0.3 V (VDD) - standard core rail compatible with legacy 3.3 V ASIC/FPGA power domains.
I/O Supply Voltage 2.5 V or 3.3 V (VDDQ) - allows direct interfacing to mixed-voltage SoCs without external voltage translation.
Burst Mode Support Intel Pentium®-compatible interleaved and linear sequences - simplifies integration with x86-derived control processors and legacy bus architectures.
Power Consumption 220 mA max operating current, 40 mA CMOS standby - balances performance and thermal budget in dense telecom modules.

Pinout & Package

Packaged in a Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm, with 0.5 mm pitch. Pinout corresponds to the "A version" (3-chip-enable configuration) per Figure 1 of datasheet 38-05540 Rev. *U.

Pin/Terminal Circuit Role Design Meaning
CLK Positive-edge-triggered system clock input Synchronizes all registered inputs/outputs; defines pipeline stage boundaries for deterministic timing.
ADSP / ADSC Address strobe processor / controller Triggers registration of address and chip enables; selects master/slave role in depth-expanded configurations.
ADV Address advance control Controls internal burst counter increment; enables automatic generation of sequential or interleaved burst addresses.
BWA–BWD Byte write enables (A–D) Selects 1–4 byte lanes for partial writes; eliminates need for read-modify-write cycles in protocol header updates.
DQA–DQD / DQPA–DQPD Data I/O and parity I/O 36-bit data + 4-bit parity interface; supports ECC-capable systems without external parity logic.
CE1 / CE2 / CE3 Chip enable inputs (3-enable version) Enables hierarchical memory expansion; CE1 primary, CE2/CE3 support depth stacking up to 3 devices.
OE Asynchronous output enable Allows dynamic tri-state control independent of clock; essential for bus sharing and hot-swap diagnostics.
ZZ Deep power-down control Reduces standby current to <100 µA; enables rapid entry/exit from low-power state during traffic lulls.

Key Features

Feature Design Value
Registered pipelined I/O Eliminates combinatorial path delays across the memory interface, enabling reliable 200 MHz operation without custom timing closure.
Synchronous self-timed writes Removes external write pulse width constraints; internal timing engine handles variable latency based on bus conditions.
User-selectable burst sequence Hardware-mode pin (MODE) configures Intel interleaved or linear addressing-no firmware overhead for burst initialization.
JTAG boundary scan (IEEE 1149.1) Enables production-level interconnect testing and in-system debug without requiring additional test pads or probes.
Dual-voltage I/O (2.5 V/3.3 V) Permits drop-in replacement in mixed-supply designs; avoids redesign when migrating FPGA or ASIC I/O banks.

Applications

Network Packet Buffering Telecom Line Card Control Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as ingress/egress packet buffer with pipelined read-after-write capability.

Use Value: 3.0 ns tCO and 200 MHz clock rate ensure sub-10 ns round-trip access, meeting 10 Gbps line-rate buffering requirements.

Use Scenario: Holding configuration tables, filter rules, and statistics counters in carrier-grade DSLAM or OLT line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as shared control-plane memory between multiple DSPs and microcontrollers.

Use Value: Registered address/data paths and CE2/CE3 depth expansion support multi-master arbitration without external glue logic.

Baseband Processor Cache Radar Signal Processing FIFO

Use Scenario: Acting as L2 cache for baseband processors in 4G/LTE femtocells handling real-time channel estimation and modulation.

IC Role / Device Role / Timing Role: Pipelined SRAM providing deterministic access to convolution kernels and FFT coefficient tables.

Use Value: Burst mode with Intel interleaved addressing aligns with ARM Cortex-A series cache line fetch patterns, improving hit efficiency.

Use Scenario: Buffering time-domain ADC samples and intermediate FFT results in phased-array radar front-ends.

IC Role / Device Role / Timing Role: High-reliability SRAM with ZZ sleep mode managing duty-cycled acquisition windows.

Use Value: 40 mA CMOS standby current and fast ZZ wake-up (<100 ns) minimize average power in pulsed radar modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV102436BLL-200BLI 1024K × 36, 200 MHz, 3.3 V only (no VDDQ flexibility), no JTAG, 119-ball BGA only Lacks dual-voltage I/O and boundary scan; requires PCB redesign for package and voltage domain changes Choose when JTAG testability is unnecessary and board layout already accommodates BGA footprint.
MT55LSD00128G36BG-200:K 128M × 36, 200 MHz, DDR2-compatible interface, 1.8 V core, 1.5 V I/O, no ZZ mode Higher density but incompatible voltage rails and interface protocol; not pin- or function-compatible Consider only for greenfield designs targeting DDR2-style burst protocols and lower core voltage.

Compared with IS61WV102436BLL-200BLI and MT55LSD00128G36BG-200:K, the CY7C1360C-200BGC uniquely combines 2.5 V/3.3 V I/O adaptability, integrated JTAG, and TQFP packaging-enabling drop-in upgrades in legacy telecom hardware without voltage rail or test infrastructure changes.

Availability

CY7C1360C-200BGC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card control memory, baseband processor cache, and radar signal processing FIFO applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1360C-200BGC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

The CY7C1360C belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in telecom infrastructure, networking equipment, and real-time signal processing systems.

FAQ

What is the function of the MODE pin on CY7C1360C-200BGC?

The MODE pin selects burst address sequencing: logic HIGH configures Intel Pentium®-compatible interleaved bursts, while logic LOW enables linear burst mode. This setting is sampled at the first rising edge of CLK after device power-up or reset and remains latched until next power cycle or ZZ exit. No runtime reconfiguration is supported.

Does CY7C1360C-200BGC support true dual-port operation?

No. The CY7C1360C-200BGC is a single-port synchronous SRAM with pipelined read/write capability. It does not support simultaneous independent read and write operations on separate ports. Its architecture uses a single address/data bus with registered control signals to achieve high throughput via pipelining-not concurrent access.

Can CE2 and CE3 be used simultaneously with CE1 for depth expansion?

Yes. In the 3-chip-enable (A-version) TQFP package, CE1 serves as primary chip select, while CE2 and CE3 act as secondary enables for stacking multiple CY7C1360C devices vertically. CE2 and CE3 are active-HIGH and must be asserted alongside CE1 to enable the device; they do not operate independently as standalone chip selects.

Is JTAG boundary scan enabled by default on CY7C1360C-200BGC?

Yes. IEEE 1149.1 JTAG is factory-enabled and functional upon power-up. The TAP controller operates using dedicated pins (TCK, TMS, TDI, TDO) and requires no external configuration. JTAG can be disabled only by writing a specific instruction to the BYPASS register via TAP-this is irreversible without power cycle and is rarely performed in production use.

CY7C1360C-200BGC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
119-BGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

CY7C1360C-200BGC FAQ

1.How can I place an order for CY7C1360C-200BGC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1360C-200BGC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1360C-200BGC reliable?

The price and inventory of CY7C1360C-200BGC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1360C-200BGC is usually 5 days.

3.What payment methods are accepted for CY7C1360C-200BGC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1360C-200BGC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1360C-200BGC?

CY7C1360C-200BGC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1360C-200BGC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1360C-200BGC?

For technical support, including CY7C1360C-200BGC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1360C-200BGC requirements.

6.How does Aetrix verify that CY7C1360C-200BGC is sourced from the original manufacturer or authorized distributors?

All CY7C1360C-200BGC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1360C-200BGC meets industry standards.

7.What is the process for return or replacement of CY7C1360C-200BGC?

All CY7C1360C-200BGC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1360C-200BGC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1360C-200BGC part is unused and in its original packaging.

Return procedure for CY7C1360C-200BGC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1360C-200BGC Tags

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