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Infineon Technologies CY7C1361B-100AC

Part No.:
CY7C1361B-100AC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1361B-100AC.pdf
Description:
IC SRAM 9MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,269

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Product details

Overview

CY7C1361B-100AC from Cypress Semiconductor is a 9-Mbit synchronous flow-through SRAM (256K × 36) with 3.3V core supply, 2.5V/3.3V I/O support, and 100-MHz operation (8.5 ns clock-to-output). It features dual address strobes (ADSP/ADSC), user-selectable linear/interleaved burst mode, and synchronous self-timed write-designed for high-speed cache and buffer applications in Pentium-class microprocessor systems.

For engineers reviewing the CY7C1361B-100AC datasheet, CY7C1361B-100AC pinout, CY7C1361B-100AC application, or CY7C1361B-100AC equivalent, key selection considerations include burst sequence control via MODE pin, JEDEC-standard 100-pin TQFP package with 3-chip-enable option, ZZ sleep mode support, and compatibility with 2.5V/3.3V I/O voltage domains in embedded computing subsystems.

Technical Context

The CY7C1361B-100AC implements a synchronous flow-through architecture with a 2-bit on-chip burst counter that auto-increments addresses during burst reads/writes. All address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK, enabling precise timing alignment with high-speed processors.

It supports two independent chip enable schemes: CE1 (active LOW), CE2 (active HIGH), and CE3 (active LOW, TQFP-A/fBGA only), allowing flexible depth expansion and memory banking. Burst initiation is controlled by ADSP (processor) or ADSC (controller), with ADV governing internal address advancement-enabling deterministic 2-1-1-1 access rates without external logic.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (256K × 36 organization), enabling single-chip storage for 1152-bit wide data paths in L2 cache buffers.
Max Clock Frequency 100 MHz - guarantees 10-ns cycle time for sustained burst transfers in real-time embedded controllers.
Access Time (tCO) 8.5 ns - defines minimum latency from CLK rise to valid DQ output, critical for meeting Pentium-compatible timing budgets.
VDD / VDDQ 3.3V ±5% core / 2.5V or 3.3V I/O - allows interoperability with mixed-voltage SoC interfaces while maintaining signal integrity.
Burst Mode Control MODE pin selects linear (LOW) or interleaved (HIGH) sequences - directly configures burst order per Intel Pentium specification.
Power Consumption 180 mA max operating current, 30 mA CMOS standby - enables low-power active-buffering in thermally constrained telecom line cards.
Package 100-pin TQFP (JEDEC MO-145AA), 3-chip-enable variant - provides standard footprint for PCB layout reuse across Cypress SRAM family.

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC MO-145AA, 14 × 20 mm body, 0.5 mm pitch.

Pin/Terminal Circuit Role Design Meaning
CLK Clock Input Synchronous edge-trigger for all registered inputs; drives burst counter increment when ADV is asserted.
ADSP / ADSC Address Strobe Inputs ADSP (processor) takes priority over ADSC (controller); both capture A[1:0] into burst counter and latch full address on CLK rise.
CE1, CE2, CE3 Chip Enable Inputs CE1 (active LOW), CE2 (active HIGH), CE3 (active LOW) enable hierarchical memory decoding for multi-bank systems.
BWA–BWD, BWE Byte Write Controls Four independent byte write enables (BWA–BWD) qualified by BWE - supports partial-word writes without read-modify-write overhead.
OE Asynchronous Output Enable Three-states DQ/DQP pins immediately on HIGH assertion - enables bus sharing with other peripherals without clock-domain synchronization.
ZZ Asynchronous Sleep Input Active-HIGH entry to low-power sleep mode with data retention - reduces dynamic power by >90% during idle cycles in portable baseband modules.

Key Features

Feature Design Value
Flow-through Synchronous Architecture Eliminates pipeline stalls by delivering data on same clock cycle as address capture - achieves true 2-1-1-1 burst throughput without wait states.
User-Selectable Burst Order MODE pin hardwires linear (GND) or interleaved (VDD/floating) burst - matches exact CPU bus protocol requirements without firmware configuration.
Dual Address Strobe Support Independent ADSP (CPU) and ADSC (cache controller) inputs allow concurrent address latching from heterogeneous masters - simplifies multi-master bus arbitration.
Synchronous Self-Timed Write Internal write timing is fully clock-synchronized - removes need for external write pulse generators or delay matching in high-speed PCB layouts.
JEDEC-Compliant I/O All I/Os meet JESD8-5 voltage thresholds - ensures reliable interfacing with 2.5V and 3.3V ASICs/FPGAs without level-shifter components.

Applications

High-Speed Cache Buffer Network Packet Buffer

Use Scenario: L2 cache between Pentium-class CPU and main memory in industrial control PLCs.

IC Role / Device Role / Timing Role: Flow-through SRAM acting as zero-wait-state write-through cache with burst-aligned data delivery.

Use Value: 8.5 ns tCO and 2-1-1-1 access rate eliminate CPU pipeline bubbles, sustaining >800 MB/s sustained bandwidth at 100 MHz.

Use Scenario: Temporary storage for variable-length Ethernet frames in Layer-2 switch ASICs.

IC Role / Device Role / Timing Role: Synchronous buffer managing ingress/egress packet queues with deterministic burst reads/writes.

Use Value: Dual ADSP/ADSC strobes enable simultaneous CPU and DMA access, reducing frame latency by 35% vs. asynchronous SRAM.

Telecom Line Card Buffer Real-Time Video Frame Store

Use Scenario: Jitter buffer in TDM-over-IP gateways handling E1/T1 voice channels.

IC Role / Device Role / Timing Role: Low-latency, low-power SRAM holding 128 ms of PCM samples with ZZ sleep during silence periods.

Use Value: 30 mA standby current and hardware ZZ control cut average power by 62% in voice-active detection cycles.

Use Scenario: Intermediate frame store between HDMI receiver and video processor in broadcast encoders.

IC Role / Device Role / Timing Role: 36-bit-wide data path supports 4:2:2 YUV sampling without packing/unpacking logic.

Use Value: 256K × 36 organization stores one full 720p frame (1280×720×16bpp) in single device, reducing BOM count by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV25636B 256K × 36, 100 MHz, but uses single CE (active LOW) and lacks ADSC/ADV signals - no native controller-address-strobe support. Requires external logic for burst address generation; unsuitable for cache controllers needing ADSC-driven bursts. Select only for simple CPU-only systems where ADSC and ADV functionality are unused.
Cypress CY7C1361C-100AC Same pinout and function, but revised revision with improved ZZ sleep current (15 µA vs. 30 mA standby) and tighter tCO tolerance (±0.3 ns). Drop-in replacement with enhanced power efficiency; validated for new designs requiring lower quiescent current. Prefer for new designs targeting extended thermal margin or battery-backed operation.

Compared with CY7C1361B-100AC, the IS61WV25636B sacrifices controller interface flexibility for cost reduction, while the CY7C1361C-100AC delivers identical functionality with measurable improvements in sleep-mode power and timing consistency-making it the recommended upgrade path for production continuity.

Availability

CY7C1361B-100AC is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet processing, and telecom jitter buffering requiring stable component supply across long-lifecycle industrial programs.

Supply support for CY7C1361B-100AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC, and USB solutions for industrial and communications markets.

The CY7C1361B belongs to Cypress's synchronous SRAM product line, engineered specifically for glueless interfacing with Intel Pentium and compatible microprocessors in performance-critical embedded systems.

FAQ

What is the function of the MODE pin on CY7C1361B-100AC?

The MODE pin selects burst sequence type: tied LOW (GND) enables linear burst order (0,1,2,3), while tied HIGH (VDD) or left floating enables interleaved order (0,2,4,6). It is a static strap pin-must remain stable during operation-and has an internal pull-up resistor, so floating defaults to interleaved mode per Pentium specification.

Does CY7C1361B-100AC support 2.5V-only I/O operation?

Yes. VDDQ accepts either 2.5V or 3.3V, and all I/Os (DQ, DQP, control pins) are JESD8-5 compliant-ensuring correct logic thresholds and drive strength at 2.5V. Core VDD remains fixed at 3.3V ±5%, so mixed-voltage operation (3.3V core + 2.5V I/O) is fully supported without level shifters.

How does the ZZ pin affect power consumption and data retention?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode with full data retention. Core current drops to ≤30 mA (typical), and all outputs go high-impedance. Data remains valid indefinitely as long as VDD ≥ 2.7V. ZZ has an internal pull-down, so leaving it unconnected results in normal operation (LOW state).

Can CY7C1361B-100AC be used with a 117-MHz or 133-MHz clock?

No. The -100AC suffix denotes the 100-MHz speed grade (8.5 ns tCO). Using it at 117 MHz or 133 MHz violates timing specifications and risks setup/hold violations on address, control, and data inputs. For higher speeds, select CY7C1361B-117AC (7.5 ns) or CY7C1361B-133AC (6.5 ns), which have identical pinouts and functions.

CY7C1361B-100AC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1361B-100AC FAQ

1.How can I place an order for CY7C1361B-100AC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1361B-100AC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1361B-100AC reliable?

The price and inventory of CY7C1361B-100AC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1361B-100AC is usually 5 days.

3.What payment methods are accepted for CY7C1361B-100AC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1361B-100AC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1361B-100AC?

CY7C1361B-100AC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1361B-100AC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1361B-100AC?

For technical support, including CY7C1361B-100AC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1361B-100AC requirements.

6.How does Aetrix verify that CY7C1361B-100AC is sourced from the original manufacturer or authorized distributors?

All CY7C1361B-100AC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1361B-100AC meets industry standards.

7.What is the process for return or replacement of CY7C1361B-100AC?

All CY7C1361B-100AC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1361B-100AC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1361B-100AC part is unused and in its original packaging.

Return procedure for CY7C1361B-100AC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1361B-100AC Tags

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