My Inquiry
My Account
Infineon Technologies CY7C1361B-100BGC
- Part No.:
- CY7C1361B-100BGC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
CY7C1361B-100BGC.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,132
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1361B-100BGC from Cypress Semiconductor is a 9-Mbit synchronous flow-through SRAM (256K × 36 organization) designed for high-speed cache and buffer applications in Pentium-class microprocessor systems. It operates at 100 MHz with 8.5 ns clock-to-output delay, supports 3.3 V core (VDD) and 2.5/3.3 V I/O (VDDQ), and features user-selectable linear/interleaved burst modes via the MODE pin.
For engineers reviewing the CY7C1361B-100BGC datasheet, CY7C1361B-100BGC pinout, CY7C1361B-100BGC application, or CY7C1361B-100BGC equivalent, key selection criteria include burst timing control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE), synchronous self-timed write capability, and JEDEC-standard 100-pin TQFP packaging with dual CE options.
Technical Context
The CY7C1361B-100BGC implements a synchronous, clock-driven architecture where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. Its 2-bit internal burst counter captures A[1:0] at ADSP/ADSC assertion and auto-increments addresses during burst reads/writes controlled by ADV.
Burst sequencing is determined statically by the MODE pin: HIGH enables Intel Pentium-style interleaved bursts; LOW enables linear bursts. Chip enable logic includes three synchronous enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW), with CE3 present only in the 3-CE TQFP and fBGA variants - matching the -100BGC suffix indicating the 100-pin TQFP package with 3 CE option.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 bits - provides 9 Mbit density with 36-bit wide data bus for efficient Pentium-compatible cache line transfers. |
| Max Clock Frequency | 100 MHz - defines maximum sustained burst throughput; supports 10 ns clock period with setup/hold timing compliance. |
| Clock-to-Output Delay | 8.5 ns - measured from CLK rise to valid DQ/DQP output; enables tight timing closure in high-speed CPU interface designs. |
| Core Supply Voltage | 3.3 V ±5% (VDD) - powers internal logic and memory array; requires stable low-noise regulation for signal integrity. |
| I/O Supply Voltage | 2.5 V or 3.3 V (VDDQ) - independently configurable I/O voltage allows interfacing with mixed-voltage system buses. |
| Burst Control Inputs | ADSP (processor strobe), ADSC (controller strobe), ADV (address advance) - enable flexible burst initiation and progression without external counters. |
| Byte Write Capability | Four independent byte enables (BWA–BWD) qualified by BWE - permits granular 8-bit writes within 36-bit word, reducing bus traffic and power. |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), RoHS-compliant, body size 14 × 20 mm, pitch 0.5 mm. Supports both 2-CE (AJ version) and 3-CE (A version) configurations; CY7C1361B-100BGC uses the 3-CE variant (CE1, CE2, CE3).
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock Input | Synchronous timing reference; all register inputs (addresses, controls, data) sampled on rising edge. |
| ADSP / ADSC | Address Strobe Inputs | ADSP initiates processor-originated bursts; ADSC enables controller-initiated bursts; ADSP takes priority when both asserted. |
| ADV | Address Advance | Asserted during burst to increment internal counter; eliminates need for external address generation logic. |
| CE1, CE2, CE3 | Chip Enable Inputs | CE1 (active LOW), CE2 (active HIGH), CE3 (active LOW) provide hierarchical chip selection for depth expansion or multi-SRAM systems. |
| BWA–BWD, BWE | Byte Write Controls | Enable selective 8-bit writes to DQA–DQD groups; BWE must be LOW to activate any byte write - prevents partial writes. |
| DQs / DQPA–DQPD | Data I/O & Parity I/O | 36-bit bidirectional data bus (DQ0–DQ35) plus four parity bits (DQPA–DQPD); direction controlled by OE; three-stated when OE HIGH or during writes. |
| MODE | Burst Sequence Select | Static strap pin: LOW = linear burst (0,1,2,3); HIGH/floating = interleaved (0,2,4,6); must remain stable during operation. |
| ZZ | Asynchronous Sleep | Active HIGH input that places device in low-power sleep mode while preserving data; internal pull-down ensures safe default LOW state. |
Key Features
| Feature | Design Value |
|---|---|
| Synchronous self-timed write | Internal write cycle completion detection eliminates need for external write pulse timing control - simplifies CPU interface logic. |
| User-selectable burst order | MODE pin configures Intel Pentium interleaved or linear addressing - matches host processor burst protocol without firmware rework. |
| Separate processor/controller address strobes | Dedicated ADSP and ADSC inputs allow coexistence of CPU and cache controller on same SRAM bus - reduces component count in multi-master systems. |
| JEDEC-standard 100-pin TQFP | Industry-standard footprint enables drop-in replacement and compatibility with existing PCB layouts and assembly processes. |
| 3.3 V core + 2.5/3.3 V I/O flexibility | Independent VDDQ supply allows seamless integration into mixed-voltage systems (e.g., 2.5 V ASIC core + 3.3 V bus interface). |
Applications
| Level-1 Cache Buffer | Network Packet Buffer |
|---|---|
|
Use Scenario: High-speed L1 cache between Pentium-class CPU and main memory, requiring zero-wait-state burst access. IC Role / Device Role / Timing Role: Synchronous flow-through SRAM acting as write-through/write-back cache line store with burst-aligned read/write cycles. Use Value: 8.5 ns clock-to-output and 2-1-1-1 access rate enable full-bandwidth utilization of 100 MHz front-side bus without pipeline stalls. |
Use Scenario: Temporary storage for variable-length Ethernet frames in switch fabric or router line cards. IC Role / Device Role / Timing Role: Burst-capable buffer managing ingress/egress packet queues with deterministic latency under traffic load. Use Value: Byte-write select (BWA–BWD) allows precise frame header/tail updates without full-word rewrite - cuts dynamic power by >40% vs. non-byte-write SRAMs. |
| Industrial Motion Controller FIFO | Video Frame Line Buffer |
|
Use Scenario: Real-time command queue between motion CPU and servo drive ASIC in CNC or robotics systems. IC Role / Device Role / Timing Role: Synchronous FIFO buffer accepting burst commands from CPU and delivering them at deterministic intervals to drive logic. Use Value: Asynchronous OE and ZZ pins enable dynamic power gating between motion segments - reduces idle current to ≤30 mA. |
Use Scenario: Horizontal line storage in HD video scaler or image processing pipeline operating at 74.25 MHz pixel clock. IC Role / Device Role / Timing Role: Dual-port-like behavior achieved via burst reads/writes synchronized to pixel clock edges. Use Value: 36-bit width supports parallel RGB888 + alpha (32-bit) plus 4-bit control flags per pixel - eliminates interleave overhead in line buffering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1361C-100BGC | Same pinout and timing, but rated for 117 MHz (7.5 ns tCO) and higher operating current (220 mA max). | Requires tighter timing margins and more robust power delivery; suitable only if design headroom exists beyond 100 MHz. | Select only when verified timing margin exceeds 1.2× required setup/hold; not drop-in due to increased power and thermal load. |
| IS61LV25636A-100TQLI | 256K × 36, 3.3 V, 100 MHz, but asynchronous output enable and no burst counter - relies on external address generation. | Lacks ADSP/ADSC/ADV logic; cannot support true synchronous burst without FPGA or ASIC glue logic. | Choose only for cost-sensitive, non-burst applications where external control logic is already present. |
Compared with CY7C1361C-100BGC, the -100BGC offers lower power and relaxed timing at 100 MHz; versus IS61LV25636A-100TQLI, it delivers integrated burst control and guaranteed synchronous timing - eliminating external counter logic and reducing BOM count by ≥3 components.
Availability
CY7C1361B-100BGC is available at Aetrix Electronics and suitable for industrial motion controllers, network packet processors, L1 cache buffers, and video line buffers requiring stable component supply across extended production lifecycles.
Supply support for CY7C1361B-100BGC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC, and USB solutions for industrial, automotive, and computing markets.
The CY7C1361B belongs to Cypress's synchronous flow-through SRAM product line, engineered specifically to replace asynchronous SRAMs in Pentium-class CPU interfaces while eliminating wait states and glue logic.
FAQ
What is the function of the MODE pin on CY7C1361B-100BGC?
The MODE pin selects burst sequence type: tied LOW (to GND) enables linear burst (0,1,2,3), while tied HIGH (to VDD) or left floating enables Intel Pentium-style interleaved burst (0,2,4,6). It is a static configuration pin with internal pull-up; changing its state during operation causes undefined burst behavior and must be avoided.
Can CY7C1361B-100BGC operate with 2.5 V I/O while using 3.3 V core supply?
Yes - VDDQ (pins 4,11,20,27,54,61,70,77) may be independently supplied at 2.5 V while VDD (pins 15,41,65,91) remains at 3.3 V. This allows direct interfacing with 2.5 V ASICs or FPGAs without level shifters, provided VDDQ stability meets ±5% tolerance and noise immunity requirements.
How does the ZZ pin affect power consumption and data retention?
When ZZ is driven HIGH, the device enters non-time-critical sleep mode with typical standby current ≤30 mA and full data retention. The internal pull-down ensures safe LOW default; floating ZZ is acceptable but not recommended for battery-powered systems due to potential leakage-induced wake-up.
Is CE3 used in the CY7C1361B-100BGC package configuration?
Yes - the "BGC" suffix denotes the 100-pin TQFP package with 3 Chip Enable option (A version), where CE3 (pin 92) is fully functional and active LOW. In contrast, the AJ version (2-CE) omits CE3; verifying the top-marking "BGC" or checking pin 92's electrical presence confirms 3-CE support.
CY7C1361B-100BGC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Bag
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
CY7C1361B-100BGC FAQ
1.How can I place an order for CY7C1361B-100BGC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1361B-100BGC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1361B-100BGC reliable?
The price and inventory of CY7C1361B-100BGC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1361B-100BGC is usually 5 days.
3.What payment methods are accepted for CY7C1361B-100BGC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1361B-100BGC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1361B-100BGC?
CY7C1361B-100BGC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1361B-100BGC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1361B-100BGC?
For technical support, including CY7C1361B-100BGC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1361B-100BGC requirements.
6.How does Aetrix verify that CY7C1361B-100BGC is sourced from the original manufacturer or authorized distributors?
All CY7C1361B-100BGC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1361B-100BGC meets industry standards.
7.What is the process for return or replacement of CY7C1361B-100BGC?
All CY7C1361B-100BGC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1361B-100BGC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1361B-100BGC part is unused and in its original packaging.
Return procedure for CY7C1361B-100BGC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1361B-100BGC Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
