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Infineon Technologies CY7C1361B-117AC

Part No.:
CY7C1361B-117AC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1361B-117AC.pdf
Description:
IC SRAM 9MBIT PAR 117MHZ 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,436

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Product details

Overview

CY7C1361B-117AC from Cypress Semiconductor is a 9-Mbit synchronous flow-through SRAM organized as 256K × 36, designed for high-speed cache and buffer applications in Pentium-class microprocessor systems. It operates at 117 MHz with 7.5 ns clock-to-output delay, supports dual VDDQ (2.5 V or 3.3 V), and features user-selectable linear/interleaved burst modes via the MODE pin. Its JEDEC-standard 100-pin TQFP package includes three chip enables (CE1–CE3) and JTAG boundary-scan capability.

For engineers reviewing the CY7C1361B-117AC datasheet, CY7C1361B-117AC pinout, CY7C1361B-117AC application, or CY7C1361B-117AC equivalent, key selection criteria include burst timing control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE), synchronous clocked address/data capture, and low-latency flow-through architecture for zero-wait-state CPU interfacing.

Technical Context

The CY7C1361B-117AC implements a synchronous, clock-driven interface where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. A 2-bit internal burst counter captures A[1:0] at ADSP/ADSC assertion and auto-increments addresses during burst reads/writes controlled by ADV.

Burst sequencing (linear vs. interleaved) is statically selected by the MODE pin; CE1 (active-low), CE2 (active-high), and CE3 (active-low) enable hierarchical chip selection; GW enables full-word writes independent of byte-write enables; and OE provides asynchronous output tri-state control without affecting internal timing.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (256K × 36 organization), enabling direct interface to 36-bit-wide Pentium data buses without external width expansion.
Max Clock Frequency 117 MHz - defines maximum sustained burst throughput of 4.2 GB/s (36-bit × 117 MHz) in flow-through mode.
Access Time (tCO) 7.5 ns - guaranteed clock-to-output delay ensures compatibility with sub-10 ns CPU read cycles.
VDD / VDDQ Supply 3.3 V ±5% core (VDD); selectable 2.5 V or 3.3 V I/O (VDDQ) - supports mixed-voltage system integration with legacy or low-voltage peripherals.
Burst Control Intel Pentium-compatible interleaved/linear burst via MODE pin - eliminates need for external burst sequencer logic.
Write Architecture Synchronous self-timed write with global (GW) and byte-select (BWA–BWD + BWE) controls - enables precise 8-bit, 16-bit, or 32-bit partial-word updates.
Power Management ZZ sleep mode (active-high) reduces standby current to ≤30 mA while preserving data - critical for power-constrained embedded cache subsystems.

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), RoHS-compliant, body size 14 mm × 14 mm, 0.5 mm pitch. Pin mapping validated per Cypress Document #38-05302 Rev. *B (Pages 4–5).

Pin/Terminal Circuit Role Design Meaning
CLK (Pin 89) Clock Input Rising-edge-triggered master timing reference for all synchronous registers (address, data, CE, BW, GW, ADV, ADSP, ADSC).
ADSP (Pin 84) / ADSC (Pin 85) Address Strobe Inputs Asynchronous initiation signals that latch A[1:0] into burst counter and full address into register on next CLK rise; ADSP takes priority over ADSC.
ADV (Pin 83) Address Advance Controls internal burst counter increment: asserted LOW on CLK rise advances address for next burst word - enables pipelined sequential access.
CE1 (Pin 98), CE2 (Pin 97), CE3 (Pin 92) Chip Enable Inputs Three-level decode: CE1 (active-low), CE2 (active-high), CE3 (active-low) allow hierarchical memory banking and depth expansion without glue logic.
BWA–BWD (Pins 93–96), BWE (Pin 87) Byte Write Controls Four independent 8-bit write masks (BWA–BWD) qualified by BWE - enables true 8-bit granularity writes to 36-bit data bus (DQA–DQPD + DQPA–DQPD).
OE (Pin 86) Output Enable Asynchronous, active-low control of I/O direction: LOW enables outputs; HIGH places DQ/DQP lines in high-impedance state - supports shared bus arbitration.
ZZ (Pin 64) Sleep Mode Input Active-high signal forcing device into low-power retention mode (≤30 mA ICC) with full data retention - no clock required during sleep.

Key Features

Feature Design Value
Flow-through synchronous architecture Eliminates pipeline stalls by delivering read data on the same clock cycle as address strobe assertion - enables zero-wait-state CPU operation.
User-selectable burst order (MODE pin) Hardware-configurable linear or interleaved burst sequences match either Pentium or generic processor requirements without firmware reconfiguration.
Dual VDDQ support (2.5 V / 3.3 V) Allows seamless integration into mixed-voltage systems - e.g., 3.3 V core with 2.5 V ASIC I/O or DDR memory interfaces.
JTAG boundary-scan (TQFP A-version) Enables IEEE 1149.1-compliant board-level test and interconnect verification without requiring additional test pads or fixtures.
Separate processor/controller address strobes ADSP and ADSC inputs permit dedicated cache controller and CPU access paths - simplifies dual-master bus arbitration logic.

Applications

Level-2 Cache Buffer Pentium-Class CPU Interface

Use Scenario: High-speed L2 cache between Pentium II/III processors and main memory.

IC Role / Device Role / Timing Role: Flow-through SRAM acting as zero-latency write-through cache tag/data store with burst-aligned read/write cycles.

Use Value: 7.5 ns tCO and 117 MHz operation meet Pentium's 8 ns timing budget for backside bus transactions.

Use Scenario: Direct CPU data-path buffering in embedded x86 systems with legacy chipset support.

IC Role / Device Role / Timing Role: Synchronous interface bridging CPU address/data/control signals to wider memory subsystems using ADSP/ADV timing.

Use Value: Native 36-bit bus width and Intel burst protocol eliminate glue logic, reducing PCB layer count and signal integrity risk.

Network Packet Buffer Industrial Real-Time Controller Memory

Use Scenario: Temporary storage for variable-length Ethernet frames in switch fabric ASICs.

IC Role / Device Role / Timing Role: Burst-capable SRAM absorbing inbound packet bursts via ADSC-controlled controller writes and ADSP-triggered CPU reads.

Use Value: Byte-write enables (BWA–BWD + BWE) allow efficient partial-frame updates without full-line overwrites.

Use Scenario: Deterministic memory for motion-control PLCs requiring jitter-free I/O response.

IC Role / Device Role / Timing Role: Predictable 7.5 ns read latency and ZZ sleep mode support hard real-time scheduling and low-power idle states.

Use Value: Synchronous self-timed write guarantees write completion within one clock cycle - essential for time-critical servo update loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1361C-133AC 133 MHz version (6.5 ns tCO); identical pinout and feature set; higher ICC (250 mA max). Requires tighter timing closure and higher power delivery; suitable only where 133 MHz bus bandwidth is mandatory. Select only if system clock exceeds 117 MHz and layout supports stricter signal integrity margins.
IS61LV25636A-10TL 10 ns tCO, 100 MHz max; 3.3 V only (no VDDQ flexibility); no JTAG or ZZ sleep mode. Lacks burst mode selection and advanced power management; limited to simpler, cost-sensitive designs. Choose when burst control and low-power sleep are unnecessary and 10 ns latency suffices.

Compared with CY7C1361C-133AC, the -117AC trades 16 MHz speed for lower power and relaxed timing margins; versus IS61LV25636A-10TL, it adds burst flexibility, dual-VDDQ, and sleep mode at higher cost and complexity.

Availability

CY7C1361B-117AC is available at Aetrix Electronics and suitable for high-performance computing, network infrastructure, and industrial control applications requiring stable component supply, long-lifecycle support, and verified timing compliance.

Supply support for CY7C1361B-117AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC, and USB solutions for industrial, automotive, and computing markets.

The CY7C1361B belongs to Cypress's synchronous flow-through SRAM product line, engineered specifically to replace asynchronous SRAMs in Pentium-class CPU cache subsystems while eliminating wait states and minimizing board-level timing complexity.

FAQ

What is the function of the MODE pin on CY7C1361B-117AC?

The MODE pin selects burst sequence type: tied to VDD (or left floating) enables Intel Pentium-style interleaved bursting; tied to GND enables linear bursting. It is a static strap pin-must remain stable during operation-and features an internal pull-up resistor. This eliminates need for external configuration logic and ensures deterministic burst behavior aligned with host processor expectations.

Can CY7C1361B-117AC operate with 2.5 V I/O while maintaining 3.3 V core voltage?

Yes. The device supports independent VDD (3.3 V ±5%) and VDDQ (2.5 V or 3.3 V) supplies. This allows direct interfacing with 2.5 V ASICs or FPGAs while retaining full 3.3 V core performance. VDDQ pins must be decoupled separately, and all I/O signals (DQ, DQP, control) conform to JEDEC JESD8-5 levels at the selected VDDQ voltage.

How does the ZZ sleep mode affect data retention and wake-up timing?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode with data fully retained and ICC reduced to ≤30 mA. No clock is required during sleep. Wake-up occurs synchronously on the first valid CLK edge after ZZ returns LOW, with full functionality restored within one clock cycle-no initialization delay or refresh overhead.

Is the 100-pin TQFP package of CY7C1361B-117AC compatible with standard reflow profiles?

Yes. The JEDEC-standard 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch) is rated for lead-free reflow per IPC/JEDEC J-STD-020. Peak temperature tolerance is 260 °C for 10 seconds. Cypress specifies moisture sensitivity level (MSL) 3, requiring bake-out if exposed >168 hours at ambient before reflow.

CY7C1361B-117AC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
117 MHz
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1361B-117AC FAQ

1.How can I place an order for CY7C1361B-117AC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1361B-117AC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1361B-117AC reliable?

The price and inventory of CY7C1361B-117AC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1361B-117AC is usually 5 days.

3.What payment methods are accepted for CY7C1361B-117AC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1361B-117AC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1361B-117AC?

CY7C1361B-117AC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1361B-117AC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1361B-117AC?

For technical support, including CY7C1361B-117AC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1361B-117AC requirements.

6.How does Aetrix verify that CY7C1361B-117AC is sourced from the original manufacturer or authorized distributors?

All CY7C1361B-117AC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1361B-117AC meets industry standards.

7.What is the process for return or replacement of CY7C1361B-117AC?

All CY7C1361B-117AC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1361B-117AC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1361B-117AC part is unused and in its original packaging.

Return procedure for CY7C1361B-117AC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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