Infineon Technologies CY7C1361B-117AJC

Overview

CY7C1361B-117AJC from Cypress Semiconductor is a 9-Mbit synchronous flow-through SRAM (256K × 36 configuration) designed for high-speed cache and buffer applications in Pentium-class microprocessor systems. It operates at 117 MHz with 7.5 ns clock-to-output delay, supports 3.3 V core (VDD) and dual-voltage I/O (2.5 V or 3.3 V VDDQ), and features user-selectable interleaved/linear burst modes via the MODE pin.

For engineers reviewing the CY7C1361B-117AJC datasheet, CY7C1361B-117AJC pinout, CY7C1361B-117AJC application, or CY7C1361B-117AJC equivalent, key selection criteria include burst timing compatibility with Intel Pentium address strobes (ADSP/ADSC), synchronous self-timed write capability, JEDEC-standard 100-pin TQFP package with 3-chip-enable option, and ZZ sleep mode support for low-power standby.

Technical Context

The CY7C1361B-117AJC implements a synchronous flow-through architecture with a 2-bit on-chip burst counter that captures A[1:0] at the first clock edge and auto-increments addresses during burst reads/writes. All address, data, and control inputs (CE1/CE2/CE3, ADSP, ADSC, ADV, BWx, BWE, GW) are registered on the rising edge of CLK.

It supports asynchronous OE for output enable control and asynchronous ZZ for non-time-critical sleep mode entry - both independent of clock timing. The device uses separate processor (ADSP) and controller (ADSC) address strobes to enable flexible system-level integration with CPU and cache controller interfaces.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC standard, 3-chip-enable variant (A version), body size 14 mm × 20 mm, lead pitch 0.5 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with CY7C1361B-117AJC, the -133AXC offers higher bandwidth but demands stricter signal integrity, while the IS61LV25636A-10TL sacrifices protocol flexibility and power features for lower unit cost in fixed-burst, single-voltage applications.

Availability

CY7C1361B-117AJC is available at Aetrix Electronics and suitable for high-performance cache buffers, Pentium-class system memory upgrades, and industrial real-time controller memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1361B-117AJC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC, and USB solutions for embedded systems.

The CY7C1361B belongs to Cypress's synchronous SRAM product line, engineered specifically for low-latency, burst-oriented memory interfacing in x86-compatible and real-time embedded architectures.

FAQ

What is the function of the MODE pin on CY7C1361B-117AJC?

The MODE pin selects burst addressing order: tied HIGH (or left floating, due to internal pull-up) enables interleaved burst mode compatible with Intel Pentium processors; tied LOW selects linear burst mode. It is a static strap pin - changing its state during operation causes undefined behavior and must be fixed before initialization.

Can CY7C1361B-117AJC operate with 2.5 V I/O while using 3.3 V core supply?

Yes. The device supports independent VDD (3.3 V ±5%) for core logic and VDDQ (2.5 V or 3.3 V) for I/O drivers. This allows direct interface with 2.5 V ASICs or FPGAs without level shifters, provided VDDQ is decoupled separately and meets JEDEC JESD8-5 voltage tolerance requirements.

How does the ZZ sleep mode affect timing and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with data retention guaranteed across full industrial temperature range (–40°C to +85°C). All outputs go high-impedance, internal clocks halt, and standby current drops to ≤30 mA. No clock or address activity is required to maintain memory contents.

What is the role of CE2 being active HIGH while CE1 and CE3 are active LOW?

This mixed polarity enables hierarchical memory decoding: CE1 (active LOW) acts as primary chip select, CE2 (active HIGH) serves as secondary enable for bank selection, and CE3 (active LOW) supports third-level depth expansion. This arrangement simplifies address decoding logic in multi-SRAM systems without requiring external inverters.