Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1361C-100AXET

Part No.:
CY7C1361C-100AXET
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1361C-100AXET.pdf
Description:
IC SRAM 9MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,897

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1361C-100AXET from Infineon Technologies (formerly Cypress) is a 9-Mbit synchronous flow-through SRAM with 256K × 36 organization, designed for high-speed cache and buffer interfacing in microprocessor systems. It operates at 100 MHz with 8.5 ns clock-to-output access time, supports 3.3 V core (±5%/+10%) and 2.5/3.3 V I/O supplies, and features Intel Pentium-compatible burst addressing via ADSP/ADSC strobes.

For engineers reviewing the CY7C1361C-100AXET datasheet, CY7C1361C-100AXET pinout, CY7C1361C-100AXET application, or CY7C1361C-100AXET equivalent, key selection criteria include synchronous burst timing, dual-voltage I/O support, JTAG boundary-scan capability, and TQFP-100 packaging with three chip enables.

Technical Context

The device implements a synchronous, clock-driven architecture where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. A 2-bit on-chip burst counter captures the initial address and auto-increments for subsequent burst cycles, supporting both interleaved and linear sequences selected by the MODE pin.

Burst initiation is controlled by either ADSP (processor address strobe) or ADSC (controller address strobe), with address advancement governed by the ADV signal. Write operations are self-timed and synchronous, while output enable (OE) and sleep mode (ZZ) operate asynchronously to allow flexible timing control in multi-master bus environments.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (256K × 36 bits), enabling full-word cache line storage for 32-bit processors with parity or ECC extension.
Max Clock Frequency 100 MHz - defines maximum sustained burst throughput of 3.6 GB/s (36-bit bus × 100 MHz).
Access Time 8.5 ns clock-to-output - ensures compatibility with sub-10 ns memory access requirements in Pentium-class systems.
VDD Supply Range 3.3 V ±5% / +10% - accommodates industrial power rail tolerances without external regulation.
VDDQ Supply Options 2.5 V or 3.3 V - allows direct interfacing to mixed-voltage logic domains (e.g., 2.5 V ASICs or 3.3 V FPGAs).
Burst Mode Control MODE pin selects Intel Pentium interleaved (HIGH) or linear (LOW) addressing - matches legacy CPU burst protocols without glue logic.
JTAG Support IEEE 1149.1-compliant boundary scan - enables PCB-level interconnect testing in dense, high-pin-count designs.

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), 14 × 20 × 1.4 mm, Pb-free, with three chip enables (CE1, CE2, CE3) and JTAG test access pins (TCK, TMS, TDI, TDO).

Pin/Terminal Circuit Role Design Meaning
CLK Clock input Positive-edge-triggered master timing reference for all synchronous inputs and internal burst counter.
ADSP / ADSC Address strobe inputs Independent processor (ADSP) or controller (ADSC) signals initiating burst sequences; dual-strobe support enables cache-coherent system partitioning.
ADV Address advance control Controls internal address increment during burst; HIGH advances, LOW holds - enables burst pause/resume without re-latching base address.
MODE Burst sequence selector Configures burst order: HIGH = Intel Pentium interleaved (0,2,4,6,1,3,5,7); LOW = linear (0,1,2,3,4,5,6,7) - ensures protocol alignment with host CPU.
CE1 / CE2 / CE3 Chip enable inputs Three independent enables allow hierarchical memory mapping: CE1 primary, CE2/CE3 for depth expansion or bank selection in multi-SRAM systems.
ZZ Deep power-down control Asynchronous active-low sleep mode reducing standby current to ≤40 mA - critical for low-power cache retention in portable/embedded systems.
DQA–DQD, DQPA–DQPD Data I/O terminals 36-bit bidirectional data bus (four 9-bit groups) with per-byte write enables (BWA–BWD) - supports partial writes without read-modify-write overhead.

Key Features

Feature Design Value
Synchronous flow-through architecture Eliminates pipeline bubbles between consecutive burst reads/writes, delivering deterministic 2-1-1-1 access rate for real-time buffering.
User-selectable burst sequence Hardware-mode pin (MODE) configures interleaved or linear addressing - avoids firmware configuration overhead and ensures boot-time compatibility.
Separate ADSP and ADSC strobes Enables concurrent cache and controller access paths, supporting split-transaction bus architectures like PCI-X or custom coherency protocols.
JEDEC JESD8-5 I/O compatibility Guarantees interoperability with 2.5 V and 3.3 V LVTTL/LVCMOS interfaces without level shifters - reduces BOM count and layout complexity.
IEEE 1149.1 boundary scan Provides full pin-level interconnect test coverage for 100-pin TQFP - essential for high-reliability manufacturing and field failure diagnostics.

Applications

Processor Cache Buffer Network Packet Buffer

Use Scenario: High-speed L2 cache buffer between Pentium-class CPU and main memory in industrial control CPUs.

IC Role / Device Role / Timing Role: Synchronous flow-through SRAM providing zero-wait-state burst reads aligned to CPU ADSP/ADV timing.

Use Value: 8.5 ns access time and 2-1-1-1 burst rate eliminate pipeline stalls, sustaining >90% bus utilization under sustained cache fill traffic.

Use Scenario: Temporary packet storage in Gigabit Ethernet switch fabric ASICs requiring burst-aligned ingress/egress buffering.

IC Role / Device Role / Timing Role: Dual-voltage (2.5 V I/O) SRAM interfacing directly to ASIC's 2.5 V datapath while powered from 3.3 V system rail.

Use Value: Per-byte write enables (BWA–BWD) allow precise 1–36 bit packet tail updates without full-line rewrite, cutting memory bandwidth usage by 40%.

Automotive ADAS Pre-Processing Buffer Industrial PLC Real-Time Data Logger

Use Scenario: Frame buffering for radar preprocessing units in automotive ADAS ECUs operating across -40°C to +125°C.

IC Role / Device Role / Timing Role: Automotive-grade (AEC-Q100 qualified) SRAM with 100 MHz operation and ZZ sleep mode for intermittent sensor burst capture.

Use Value: Deep-sleep current ≤60 mA enables low-power wake-on-radar-event operation, extending ECU battery life during vehicle sleep modes.

Use Scenario: Cyclic data logging buffer in programmable logic controllers capturing analog I/O snapshots at 10 kHz sample rates.

IC Role / Device Role / Timing Role: Flow-through SRAM acting as ping-pong buffer between ADC DMA engine and flash write controller.

Use Value: Synchronous self-timed write ensures deterministic 100 ns write completion, preventing DMA overrun during continuous acquisition bursts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV102436BLL-10BLI 1024K × 36, 10 ns access, 3.3 V only (no VDDQ flexibility), no JTAG, 119-ball BGA only. Lacks dual-voltage I/O and boundary scan; requires redesign for TQFP footprint and voltage domain integration. Select when board space is constrained and JTAG test is unnecessary; avoid if 2.5 V interface or TQFP mounting required.
MT48LC32M32B2-7E:G SDRAM (not SRAM), 32M × 32, 143 MHz clock, asynchronous command interface, higher latency, requires refresh. Fundamentally different architecture - not drop-in; demands memory controller redesign and timing closure for refresh cycles. Consider only for cost-sensitive, non-real-time buffering where deterministic latency is not required.

Compared with IS61WV102436BLL-10BLI and MT48LC32M32B2-7E:G, the CY7C1361C-100AXET uniquely delivers guaranteed 8.5 ns synchronous access, dual-VDDQ support, and JTAG testability in a manufacturable TQFP package - making it irreplaceable for timing-critical, testable, mixed-voltage embedded cache designs.

Availability

CY7C1361C-100AXET is available at Aetrix Electronics and suitable for processor cache buffers, network packet buffers, and automotive ADAS pre-processing systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1361C-100AXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for automotive, industrial, and communications markets.

This device belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for high-bandwidth, low-latency interfacing with x86 and embedded microprocessors requiring burst-mode cache coherence without external timing logic.

FAQ

What is the function of the MODE pin on CY7C1361C-100AXET?

The MODE pin selects burst address sequencing: HIGH configures Intel Pentium-style interleaved addressing (0,2,4,6,1,3,5,7), while LOW enables linear addressing (0,1,2,3,4,5,6,7). This hardware-selectable mode ensures direct compatibility with legacy CPU burst protocols without software configuration or additional logic.

Does CY7C1361C-100AXET support 2.5 V I/O operation with a 3.3 V core supply?

Yes - VDD is rated 3.3 V ±5%/+10% for core logic, while VDDQ accepts either 2.5 V or 3.3 V independently. This dual-voltage I/O capability allows direct interfacing to 2.5 V ASICs or FPGAs without level shifters, maintaining signal integrity and reducing system power.

How does the ZZ (sleep) mode reduce power consumption?

In ZZ mode (active-low), the device enters deep power-down, reducing CMOS standby current to ≤40 mA (commercial/industrial) or ≤60 mA (automotive). All internal clocks and outputs are disabled, but data retention is maintained - enabling rapid wake-up (<50 ns) for event-driven applications like radar burst capture.

Is JTAG boundary scan supported on the 100-pin TQFP package?

Yes - the 100-pin TQFP (A version) includes dedicated TCK, TMS, TDI, and TDO pins compliant with IEEE 1149.1. This enables full boundary-scan testing of solder joints and interconnects, critical for high-reliability manufacturing of dense, fine-pitch PCB assemblies.

CY7C1361C-100AXET Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1361C-100AXET FAQ

1.How can I place an order for CY7C1361C-100AXET through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1361C-100AXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1361C-100AXET reliable?

The price and inventory of CY7C1361C-100AXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1361C-100AXET is usually 5 days.

3.What payment methods are accepted for CY7C1361C-100AXET?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1361C-100AXET transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1361C-100AXET?

CY7C1361C-100AXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1361C-100AXET order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1361C-100AXET?

For technical support, including CY7C1361C-100AXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1361C-100AXET requirements.

6.How does Aetrix verify that CY7C1361C-100AXET is sourced from the original manufacturer or authorized distributors?

All CY7C1361C-100AXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1361C-100AXET meets industry standards.

7.What is the process for return or replacement of CY7C1361C-100AXET?

All CY7C1361C-100AXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1361C-100AXET, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1361C-100AXET part is unused and in its original packaging.

Return procedure for CY7C1361C-100AXET:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1361C-100AXET Tags

  • CY7C1361C-100AXET
  • CY7C1361C-100AXET PDF
  • CY7C1361C-100AXET Datasheet
  • CY7C1361C-100AXET Specifications
  • CY7C1361C-100AXET Images
  • Infineon Technologies
  • Infineon Technologies CY7C1361C-100AXET
  • Buy CY7C1361C-100AXET
  • CY7C1361C-100AXET Price
  • CY7C1361C-100AXET Distributor
  • CY7C1361C-100AXET Supplier
  • CY7C1361C-100AXET Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER