My Inquiry
My Account
Infineon Technologies CY7C1361C-100BZXE
- Part No.:
- CY7C1361C-100BZXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1361C-100BZXE.pdf
- Description:
- IC SRAM 9MBIT PAR 165FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,620
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1361C-100BZXE from Infineon Technologies (formerly Cypress) is a 9-Mbit synchronous flow-through SRAM configured as 256K × 36, operating at 100 MHz with 8.5 ns maximum access time, 3.3 V core supply (VDD), 2.5/3.3 V I/O supply (VDDQ), and IEEE 1149.1 JTAG boundary scan support - used in high-speed cache subsystems for Pentium-class processors.
For engineers reviewing the CY7C1361C-100BZXE datasheet, CY7C1361C-100BZXE pinout, CY7C1361C-100BZXE application, or CY7C1361C-100BZXE equivalent, key selection criteria include burst mode compatibility (interleaved/linear), dual VDDQ support, synchronous self-timed write timing, and TQFP-100 Pb-free packaging with 3-chip-enable architecture.
Technical Context
The CY7C1361C-100BZXE implements a synchronous flow-through architecture where all address, data, and control inputs (ADSP, ADSC, ADV, CE1–CE3, BWx, BWE, GW) are registered on the rising edge of CLK. Burst addressing is managed by a 2-bit on-chip counter that auto-increments after the initial address capture.
It supports two burst sequence types selected via the MODE pin: interleaved (MODE = HIGH) or linear (MODE = LOW); output enable (OE) is asynchronous while sleep mode (ZZ) is controlled independently. All I/Os comply with JEDEC JESD8-5 voltage levels for 2.5 V or 3.3 V operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 organization) |
| Max Clock Frequency | 100 MHz - defines maximum sustained burst throughput without wait states |
| Access Time | 8.5 ns - clock-to-output delay under 100 MHz conditions, critical for cache timing closure |
| VDD Supply Range | 3.3 V ±5% - core power tolerance enabling stable operation across industrial temperature range |
| VDDQ Supply Options | 2.5 V or 3.3 V - allows direct interface to mixed-voltage processor buses without level shifters |
| Burst Control | Intel Pentium-compatible interleaved/linear sequences - ensures drop-in compatibility with legacy x86 cache controllers |
| JTAG Support | IEEE 1149.1 compliant - enables board-level testability and in-system debugging of memory subsystems |
Pinout & Package
Package: Pb-free 100-pin TQFP (14 × 20 × 1.4 mm), 3-chip-enable variant (A version), with exposed thermal pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Positive-edge-triggered system clock input | Synchronizes all register-based inputs (addresses, CE, BW, ADV, ADSP/ADSC) and initiates burst cycles |
| ADSP / ADSC | Address strobe inputs (processor/cache controller) | Trigger burst initiation; ADSP used for CPU-initiated bursts, ADSC for controller-initiated bursts |
| ADV | Address advancement control | Controls internal address increment during burst - HIGH advances, LOW holds current address |
| MODE | Burst sequence selection | HIGH = Intel Pentium interleaved burst; LOW = linear burst - determines address mapping for cache line fills |
| CE1, CE2, CE3 | Chip enable inputs (3-enable configuration) | Enable hierarchical depth expansion; CE1 primary, CE2/CE3 for bank selection in multi-SRAM systems |
| ZZ | Deep power-down control | Asynchronous entry into low-current sleep mode (<60 µA standby), independent of clock or bus activity |
| DQA–DQD, DQPA–DQPD | Data I/O groups (36-bit wide) | Four 9-bit byte lanes with individual byte-write enables (BWA–BWD) - enables partial-word writes without read-modify-write |
Key Features
| Feature | Design Value |
|---|---|
| Synchronous self-timed write | Eliminates external write pulse generation - internal timing control ensures reliable data capture across voltage/temperature |
| User-selectable burst mode | Hardware-mode pin (MODE) enables runtime selection between interleaved and linear addressing - matches host CPU requirements |
| Separate ADSP/ADSC strobes | Enables concurrent CPU and cache controller access arbitration - reduces bus contention in multi-master systems |
| JEDEC JESD8-5 I/O compliance | Guarantees interoperability with 2.5 V and 3.3 V logic families without external level translation circuitry |
| Byte-wide write enable (BWA–BWD) | Permits independent write masking of four 9-bit data segments - essential for efficient cache line updates and ECC handling |
Applications
| High-Performance CPU Cache | Network Packet Buffer |
|---|---|
Use Scenario: L2 cache buffer between Pentium-class microprocessor and main memory in embedded computing platforms. IC Role / Device Role / Timing Role: Flow-through SRAM providing zero-wait-state burst reads/writes synchronized to CPU clock domain. Use Value: 8.5 ns access time and 2-1-1-1 burst rate meet tight timing budgets for 100 MHz front-side bus operation. | Use Scenario: Temporary storage for variable-length Ethernet frames in Layer 2 switching ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffering with byte-selectable writes for header modification. Use Value: 36-bit bus width and per-byte write enables allow efficient 40-byte header edits without full-frame rewrite overhead. |
| Industrial Motion Controller | Radar Signal Preprocessing |
Use Scenario: Real-time trajectory lookup table storage in servo drive firmware executing at 100 MHz. IC Role / Device Role / Timing Role: Deterministic-access memory for position/velocity interpolation tables accessed via burst reads. Use Value: Synchronous flow-through architecture guarantees fixed 8.5 ns latency - critical for jitter-sensitive motion profiling. | Use Scenario: Coherent integration buffer for FMCW radar baseband processing in automotive ADAS modules. IC Role / Device Role / Timing Role: High-speed data staging between ADC interface and FFT engine, supporting 100 MHz sample clock alignment. Use Value: Dual VDDQ support (2.5 V) interfaces directly with low-voltage ADC/DAC chains while maintaining 3.3 V core stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25636A-100TQLI | 256K × 36, 100 MHz, 3.3 V only (no VDDQ flexibility), no JTAG, no ZZ sleep mode | Lacks deep-sleep and boundary-scan - unsuitable for test-critical or ultra-low-power idle states | Select when JTAG testability and sub-100 µA standby are not required; lower cost alternative for basic caching |
| CY7C1371C-100BZI | Same 256K × 36, 100 MHz, but with pipelined (not flow-through) architecture and 9 ns access | Pipelined latency model introduces 1-cycle read latency - incompatible with zero-wait-state CPU interfaces | Choose only if system design accommodates pipeline staging; not a functional replacement for flow-through timing |
Compared with IS61LV25636A-100TQLI and CY7C1371C-100BZI, the CY7C1361C-100BZXE uniquely delivers flow-through zero-latency burst reads, dual-voltage I/O, JTAG testability, and deep-sleep mode - making it irreplaceable in deterministic real-time cache and packet-processing roles.
Availability
CY7C1361C-100BZXE is available at Aetrix Electronics and suitable for high-speed CPU cache subsystems, network packet buffering, and industrial motion control applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1361C-100BZXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.
The CY7C1361C belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for zero-wait-state cache interfacing with x86 and RISC microprocessors in performance-constrained embedded systems.
FAQ
What is the difference between CY7C1361C and CY7C1363C?
The CY7C1361C is a 256K × 36 (9-Mbit) device, while the CY7C1363C is a 512K × 18 (9-Mbit) variant with identical timing, voltage, and feature set. They share pin compatibility in TQFP packages but differ in address/data width allocation - the former supports wider data paths, the latter higher depth with narrower bus.
Does CY7C1361C-100BZXE support both 2.5 V and 3.3 V I/O simultaneously?
No - VDDQ must be externally set to either 2.5 V or 3.3 V for all I/O banks; it cannot operate with mixed voltages on the same device. The selection is made at power-up and affects all DQ, DQP, and control pins except CLK, ZZ, and MODE.
Can the MODE pin be changed dynamically during operation?
Yes - the MODE pin is sampled on every rising edge of CLK when ADSP or ADSC is asserted to initiate a burst. This allows runtime switching between interleaved and linear burst sequences without reset or reconfiguration.
Is JTAG functionality enabled by default on CY7C1361C-100BZXE?
Yes - IEEE 1149.1 boundary scan is fully implemented and active upon power-up. It requires no configuration; TAP signals (TCK, TMS, TDI, TDO) are dedicated pins in all package variants including the 100-pin TQFP (BZXE).
CY7C1361C-100BZXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1361C-100BZXE FAQ
1.How can I place an order for CY7C1361C-100BZXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1361C-100BZXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1361C-100BZXE reliable?
The price and inventory of CY7C1361C-100BZXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1361C-100BZXE is usually 5 days.
3.What payment methods are accepted for CY7C1361C-100BZXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1361C-100BZXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1361C-100BZXE?
CY7C1361C-100BZXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1361C-100BZXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1361C-100BZXE?
For technical support, including CY7C1361C-100BZXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1361C-100BZXE requirements.
6.How does Aetrix verify that CY7C1361C-100BZXE is sourced from the original manufacturer or authorized distributors?
All CY7C1361C-100BZXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1361C-100BZXE meets industry standards.
7.What is the process for return or replacement of CY7C1361C-100BZXE?
All CY7C1361C-100BZXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1361C-100BZXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1361C-100BZXE part is unused and in its original packaging.
Return procedure for CY7C1361C-100BZXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1361C-100BZXE Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
