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Infineon Technologies CY7C1361C-100BZXET
- Part No.:
- CY7C1361C-100BZXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1361C-100BZXET.pdf
- Description:
- IC SRAM 9MBIT PAR 165FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,265
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Product details
Overview
CY7C1361C-100BZXET from Infineon Technologies (formerly Cypress) is a 9-Mbit synchronous flow-through SRAM organized as 256K × 36, operating at 100 MHz with 8.5 ns clock-to-output access time, 3.3 V core supply (VDD), 2.5/3.3 V I/O supply (VDDQ), and IEEE 1149.1 JTAG boundary scan support - deployed in high-speed cache subsystems for industrial microprocessor-based controllers.
For engineers reviewing the CY7C1361C-100BZXET datasheet, CY7C1361C-100BZXET pinout, CY7C1361C-100BZXET application, or CY7C1361C-100BZXET equivalent, key selection criteria include burst mode compatibility (interleaved/linear), dual VDDQ voltage flexibility, synchronous self-timed write timing, CE1/CE2/CE3 chip enable architecture, and TQFP-100 Pb-free packaging for thermal and layout stability in embedded compute modules.
Technical Context
This SRAM implements a synchronous flow-through architecture with positive-edge-triggered CLK, registered address/data inputs, and asynchronous OE/ZZ controls. It supports 2-1-1-1 burst access rate and uses a 2-bit on-chip burst counter to auto-increment addresses during burst sequences initiated by ADSP or ADSC strobes.
The device features separate processor (ADSP) and controller (ADSC) address strobes, user-selectable MODE pin for interleaved vs. linear burst addressing, and synchronous global write (GW) with byte-write capability via BWx pins. All I/Os comply with JEDEC JESD8-5 for 2.5 V or 3.3 V operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 organization) |
| Max Clock Frequency | 100 MHz - enables synchronous interface with Pentium-class processors without wait states |
| Access Time (tCO) | 8.5 ns - defines minimum clock-to-valid-output delay for timing-critical read paths |
| Core Supply (VDD) | 3.3 V ±5% - requires tight-regulated core rail; not tolerant of 2.5 V core operation |
| I/O Supply (VDDQ) | 2.5 V or 3.3 V - allows direct interfacing to mixed-voltage logic domains |
| Burst Mode Control | MODE pin selects Intel Pentium-compatible interleaved (HIGH) or linear (LOW) addressing |
| Package | Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) - RoHS-compliant, standard footprint for reflow assembly |
Pinout & Package
Package: Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, 0.5 mm pitch, 3-chip-enable variant (A version).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference for all synchronous inputs and internal registers |
| ADSP / ADSC | Address strobe (processor / controller) | Initiates burst or single-cycle accesses; determines which address register captures A[1:0] |
| ADV | Address advance control | Controls internal burst address incrementing; active-HIGH during burst progression |
| CE1 / CE2 / CE3 | Chip enable inputs | Three independent enables allow depth expansion across multiple SRAMs without external logic |
| BWA–BWD / BWE | Byte write enables | Enable/disable write to individual 9-bit data nibbles (A–D) and parity (E) for partial-word writes |
| DQA–DQD / DQPA–DQPD | Data I/O and parity I/O | 36-bit wide data bus (4 × 9-bit groups) with dedicated parity bits per group for ECC-capable systems |
| OE | Output enable | Asynchronous control enabling/disabling output drivers - used for bus sharing and timing isolation |
| ZZ | Deep power-down mode | Asynchronous entry into low-current sleep state (≤60 µA standby); retains data while reducing system power |
Key Features
| Feature | Design Value |
|---|---|
| Synchronous self-timed write | Eliminates external write pulse generation; internal timing ensures reliable setup/hold compliance |
| IEEE 1149.1 JTAG boundary scan | Enables in-system testability and interconnect verification without physical probe access |
| User-selectable burst sequence | MODE pin configures Intel Pentium interleaved or linear addressing - matches host CPU expectations |
| Separate ADSP/ADSC strobes | Allows concurrent cache and memory controller access arbitration without shared strobe contention |
| Dual VDDQ support (2.5 V / 3.3 V) | Permits direct connection to either 2.5 V or 3.3 V logic families - avoids level-shifter components |
Applications
| Industrial PLC Backplane Memory | Automotive ADAS Preprocessing Buffer |
|---|---|
|
Use Scenario: High-bandwidth data buffering between FPGA-based motion control logic and real-time I/O modules in programmable logic controllers. IC Role / Device Role / Timing Role: Synchronous flow-through SRAM providing zero-wait-state burst reads/writes aligned to 100 MHz system clock for deterministic cycle timing. Use Value: 2-1-1-1 access rate and 8.5 ns tCO ensure sub-10 ns latency for servo loop updates, meeting <100 µs control cycle requirements. |
Use Scenario: Temporary storage of sensor fusion outputs (radar + camera) prior to DSP processing in autonomous driving ECUs. IC Role / Device Role / Timing Role: Burst-mode SRAM acting as low-latency frame buffer with interleaved addressing to match vision processor memory access patterns. Use Value: MODE-selectable burst sequencing and dual-VDDQ support enable seamless integration with 2.5 V image signal processors and 3.3 V radar SoCs. |
| Telecom Line Card Packet Buffer | Medical Imaging Acquisition Module |
|
Use Scenario: Storing packet headers and metadata in multi-gigabit Ethernet line cards requiring deterministic latency under traffic bursts. IC Role / Device Role / Timing Role: Flow-through SRAM serving as first-level packet descriptor cache with synchronous write and asynchronous OE-controlled read multiplexing. Use Value: CE1/CE2/CE3 architecture allows stacking four devices for 144-bit-wide descriptor storage while maintaining 100 MHz throughput. |
Use Scenario: Real-time buffering of raw X-ray detector pixel streams before compression and transfer to host PC in digital radiography systems. IC Role / Device Role / Timing Role: High-reliability SRAM with ZZ sleep mode used for power-gated acquisition windows to meet IEC 62304 leakage current limits. Use Value: ≤60 µA automotive-grade standby current and JTAG testability satisfy medical device traceability and low-power operational requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25632ALL-10TLI | 256K × 32 organization, no parity bits, 3.3 V only VDDQ, no JTAG, 10 ns tCO | Lacks DQP parity I/O and MODE-selectable burst - unsuitable for ECC or Pentium-aligned systems | Select when parity and Intel-compatible burst are unnecessary and cost sensitivity outweighs feature set |
| MT48LC32M16A2P-75:C | SDRAM (asynchronous command interface), 512Mbit density, 7.5 ns CL, requires refresh and initialization | Fundamentally different architecture - not drop-in; adds controller complexity and latency variability | Choose only when higher density justifies added DRAM controller overhead and non-deterministic timing |
Compared with IS61WV25632ALL-10TLI and MT48LC32M16A2P-75:C, the CY7C1361C-100BZXET uniquely delivers parity-enabled 256K × 36 flow-through operation with Intel-burst compatibility, JTAG testability, and dual-VDDQ flexibility - critical for deterministic, safety-aware embedded computing where reliability and timing predictability are non-negotiable.
Availability
CY7C1361C-100BZXET is available at Aetrix Electronics and suitable for industrial PLC backplanes, automotive ADAS preprocessing buffers, and telecom line card packet buffers requiring stable component supply, long-lifecycle support, and RoHS-compliant TQFP packaging.
Supply support for CY7C1361C-100BZXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, emphasizing reliability, automotive qualification, and industrial longevity.
The CY7C1361C belongs to Cypress's legacy synchronous SRAM product line, engineered specifically for zero-wait-state interfacing with high-end microprocessors and cache controllers in deterministic real-time systems.
FAQ
What is the function of the MODE pin on CY7C1361C-100BZXET?
The MODE pin selects burst address sequencing: HIGH enables Intel Pentium-style interleaved addressing (e.g., 0, 8, 4, 12…), while LOW selects linear addressing (e.g., 0, 1, 2, 3…). This matches host CPU expectations and eliminates external address remapping logic in compatible systems.
Can CY7C1361C-100BZXET operate with 2.5 V on VDD (core supply)?
No. The core supply VDD must be 3.3 V ±5% (3.135 V to 3.465 V). Only VDDQ - the I/O supply - supports 2.5 V or 3.3 V operation. Applying 2.5 V to VDD will prevent proper internal register operation and cause functional failure.
Does CY7C1361C-100BZXET support depth expansion with other SRAMs?
Yes. Three chip enable inputs (CE1, CE2, CE3) allow stacking multiple CY7C1361C devices for increased memory depth. CE1 serves as primary enable; CE2 and CE3 provide secondary selection for 3-chip configurations, enabling up to 768K × 36 with three devices.
Is JTAG boundary scan enabled by default on CY7C1361C-100BZXET?
Yes. IEEE 1149.1 JTAG is fully implemented and active by default. TDI, TDO, TCK, and TMS pins are dedicated and functional without configuration. The JTAG feature can be disabled only via external hardware tie-offs per datasheet Section "Disabling the JTAG Feature" - not through software or internal registers.
CY7C1361C-100BZXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1361C-100BZXET FAQ
1.How can I place an order for CY7C1361C-100BZXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1361C-100BZXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1361C-100BZXET reliable?
The price and inventory of CY7C1361C-100BZXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1361C-100BZXET is usually 5 days.
3.What payment methods are accepted for CY7C1361C-100BZXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1361C-100BZXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1361C-100BZXET?
CY7C1361C-100BZXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1361C-100BZXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1361C-100BZXET?
For technical support, including CY7C1361C-100BZXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1361C-100BZXET requirements.
6.How does Aetrix verify that CY7C1361C-100BZXET is sourced from the original manufacturer or authorized distributors?
All CY7C1361C-100BZXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1361C-100BZXET meets industry standards.
7.What is the process for return or replacement of CY7C1361C-100BZXET?
All CY7C1361C-100BZXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1361C-100BZXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1361C-100BZXET part is unused and in its original packaging.
Return procedure for CY7C1361C-100BZXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1361C-100BZXET Tags
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