Infineon Technologies CY7C1361C-133AJXCT

Overview

CY7C1361C-133AJXCT from Infineon Technologies (formerly Cypress) is a 9-Mbit synchronous flow-through SRAM with 256K × 36 organization, designed for high-speed cache and buffer interfacing in microprocessor systems. It supports 133 MHz bus operation with 6.5 ns clock-to-output delay, operates on 3.3 V core supply (±5%/+10%), and features dual-voltage I/O (2.5 V or 3.3 V) for compatibility with advanced logic families.

For engineers reviewing the CY7C1361C-133AJXCT datasheet, CY7C1361C-133AJXCT pinout, CY7C1361C-133AJXCT application, or CY7C1361C-133AJXCT equivalent, key selection criteria include burst mode flexibility (Intel Pentium™ interleaved/linear), synchronous self-timed write, JTAG boundary scan compliance, and TQFP-100 Pb-free packaging with 3-chip-enable configuration.

Technical Context

The device implements a synchronous, clock-driven architecture where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. A 2-bit on-chip burst counter captures the initial address and auto-increments for subsequent burst cycles, supporting both ADSP (processor strobe) and ADSC (controller strobe) initiation.

Burst sequencing is user-selectable via the MODE pin (HIGH = interleaved, LOW = linear), and write operations use synchronous self-timed timing with byte-write enable (BWx) and global write (GW) controls. The ZZ sleep mode reduces standby current to 40 mA (commercial/industrial) while maintaining data retention.

Key Specifications

Pinout & Package

Package: Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, 0.5 mm pitch, 3-chip-enable configuration (CE1, CE2, CE3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1361C-133AJXCT, the -100AXC offers lower power and cost at reduced speed, while the AS7C3256A-133JCIN sacrifices burst flexibility and testability for simplified interface - neither is pin- or functionally identical.

Availability

CY7C1361C-133AJXCT is available at Aetrix Electronics and suitable for high-speed CPU cache buffers, network packet buffers, and industrial PLC memory expansion requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1361C-133AJXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and memory solutions.

This device belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for high-bandwidth, low-latency interfacing with microprocessors and cache controllers in performance-critical embedded systems.

FAQ

What is the function of the MODE pin on CY7C1361C-133AJXCT?

The MODE pin selects burst address sequencing: HIGH configures Intel Pentium™-compatible interleaved addressing (e.g., 0, 4, 1, 5…), while LOW enables linear addressing (0, 1, 2, 3…). This hardware-controlled selection ensures deterministic, glitch-free mode switching without software overhead or timing uncertainty.

Does CY7C1361C-133AJXCT support JTAG boundary scan in all packages?

Yes - JTAG (IEEE 1149.1) is supported in all package variants, including the 100-pin TQFP (AJXCT), 119-ball BGA, and 165-ball FBGA. Pins TDI, TDO, TCK, and TMS are dedicated and electrically compliant per JESD8-5, enabling full boundary-scan testing regardless of package choice.

Can VDDQ be operated at 2.5 V while VDD remains at 3.3 V?

Yes - the device explicitly supports independent 3.3 V core (VDD) and 2.5 V I/O (VDDQ) supplies. This dual-rail operation allows direct connection to 2.5 V FPGA or ASIC I/O banks without level shifters, while maintaining full 133 MHz performance and 6.5 ns t_CO.

How does the ZZ sleep mode affect data retention and wake-up timing?

In ZZ mode (active-LOW), the device enters deep sleep with 40 mA standby current while retaining all stored data. Wake-up is asynchronous and complete within one CLK cycle after ZZ returns HIGH - no refresh or initialization sequence is required, ensuring deterministic low-latency resumption of operation.