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Infineon Technologies CY7C1361C-133AXCT

Part No.:
CY7C1361C-133AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1361C-133AXCT.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,645

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Product details

Overview

CY7C1361C-133AXCT from Infineon Technologies (formerly Cypress) is a 9-Mbit synchronous flow-through SRAM with 256K × 36 organization, designed for high-speed cache and buffer applications in microprocessor systems. It supports 133 MHz bus operation with 6.5 ns clock-to-output delay, operates on 3.3 V core supply (±5%/+10%), and features dual VDDQ options (2.5 V or 3.3 V) for I/O compatibility with Pentium™-class processors.

For engineers reviewing the CY7C1361C-133AXCT datasheet, CY7C1361C-133AXCT pinout, CY7C1361C-133AXCT application, or CY7C1361C-133AXCT equivalent, key selection criteria include burst sequence mode (interleaved/linear), chip enable configuration (3-CE TQFP), JTAG boundary scan support, and ZZ sleep mode timing compliance.

Technical Context

This SRAM implements a synchronous, flow-through architecture with positive-edge-triggered CLK control over all address, data, and control inputs except OE and ZZ. A 2-bit on-chip burst counter captures the initial address and auto-increments for subsequent burst cycles, supporting Intel Pentium™-compatible interleaved or linear sequences via the MODE pin.

It provides separate ADSP (processor) and ADSC (controller) address strobes, synchronous self-timed write with global write (GW) and byte-write enables (BWA–BWD, BWE), and asynchronous output enable (OE). The device integrates IEEE 1149.1 JTAG boundary scan for testability and supports ZZ sleep mode with fast wake-up.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (256K × 36 words), enabling full 36-bit data path buffering without external width expansion.
Max Clock Frequency 133 MHz - guarantees sub-8 ns cycle time for high-bandwidth CPU/cache interface timing budgets.
Access Time (tCO) 6.5 ns - defines minimum clock-to-valid-output delay for synchronous read setup in real-time burst transfers.
VDD Supply Range 3.3 V ±5% / +10% - ensures stable core operation across industrial voltage tolerances and ripple conditions.
VDDQ Options 2.5 V or 3.3 V - allows direct interfacing with mixed-voltage SoCs or legacy 2.5 V logic without level shifters.
Burst Mode Control MODE pin selects interleaved (HIGH) or linear (LOW) addressing - matches specific CPU cache line fetch patterns.
Package Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) - RoHS-compliant, surface-mountable, and compatible with standard reflow profiles.

Pinout & Package

Package: Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, 0.5 mm pitch, 3-chip-enable variant (A version).

Pin/Terminal Circuit Role Design Meaning
CLK Clock input Positive-edge-triggered master timing reference for all synchronous registers (address, data, CE, BW, ADV, ADSP, ADSC).
ADSP / ADSC Address strobe inputs Separate processor (ADSP) and controller (ADSC) strobes enable independent burst initiation sources in multi-master systems.
ADV Address advance control Controls internal address increment during burst; active-HIGH advances to next location after each access.
MODE Burst sequence selector HIGH = interleaved (e.g., Pentium™ L1 cache), LOW = linear - directly configures burst address generation logic.
ZZ Deep power-down enable Asynchronous entry into low-current sleep mode (≤40 mA standby); wake-up synchronized to next CLK edge.
OE Output enable Asynchronous control of output buffers - allows dynamic bus sharing without clock domain constraints.
CE1 / CE2 / CE3 Chip enable inputs Three independent enables support depth expansion (e.g., stacking multiple SRAMs) and hierarchical memory decoding.
BWA–BWD, BWE Byte write enables Eight individual 4-bit write masks (four DQ groups + parity) enable precise partial-word writes without read-modify-write overhead.

Key Features

Feature Design Value
Flow-through synchronous architecture Eliminates pipeline latency between consecutive burst reads/writes - critical for zero-wait-state CPU interfaces.
User-selectable burst sequence Hardware-mode pin (MODE) configures interleaved or linear addressing to match exact CPU cache controller behavior.
JEDEC JESD8-5 I/O compatibility Ensures interoperability with 2.5 V and 3.3 V CMOS logic families without external voltage translation circuitry.
IEEE 1149.1 JTAG boundary scan Enables in-circuit testability and interconnect verification on dense PCBs without physical probe access.
Synchronous self-timed write Internal write cycle completion detection eliminates need for external write-strobe timing coordination.

Applications

High-Performance CPU Cache Buffer Network Packet Buffering

Use Scenario: L2 cache tag/data storage in x86-compatible embedded controllers requiring deterministic 133 MHz burst access.

IC Role / Device Role / Timing Role: Flow-through SRAM acting as synchronous, low-latency memory buffer between CPU core and memory controller.

Use Value: 6.5 ns tCO and 2-1-1-1 access rate eliminate wait states, sustaining >1.0 GB/s sustained bandwidth at 133 MHz.

Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2 switches before forwarding decision and egress scheduling.

IC Role / Device Role / Timing Role: High-speed packet buffer with byte-write granularity supporting partial frame updates and header modifications.

Use Value: Independent BWA–BWD enables per-byte write masking, reducing unnecessary memory writes during frame editing operations.

Industrial Motion Controller Memory Avionics Data Acquisition Buffer

Use Scenario: Real-time trajectory interpolation buffer in CNC motion controllers where jitter-free memory access prevents servo position error.

IC Role / Device Role / Timing Role: Deterministic-access SRAM providing glitch-free data delivery to FPGA-based interpolators under continuous burst load.

Use Value: ZZ sleep mode reduces idle power to ≤40 mA while maintaining instant wake-up - critical for energy-constrained embedded systems.

Use Scenario: High-integrity sensor data staging in flight data recorders, capturing ADC samples at 10+ MS/s before compression and storage.

IC Role / Device Role / Timing Role: Radiation-tolerant (neutron soft error immunity documented) buffer ensuring data integrity during high-altitude operation.

Use Value: Dual VDDQ (2.5 V) supports connection to radiation-hardened ADCs and FPGAs operating at lower I/O voltage for noise margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C36256B-133JCIN Same density (256K × 36), but uses 3.3 V only for both core and I/O; no VDDQ flexibility or ZZ sleep mode. Lacks deep-sleep capability and dual-VDDQ - unsuitable for mixed-voltage or ultra-low-power idle states. Select when system uses uniform 3.3 V I/O and does not require power-gated idle modes.
IS61WV25636BLL-133TQLI 256K × 36, 133 MHz, but asynchronous output enable disabled during burst; no JTAG or MODE-selectable burst. No interleaved burst support or boundary scan - limits use in Pentium™-compatible or test-critical designs. Select for cost-sensitive applications where burst sequence matching and production testability are non-essential.

Compared with AS7C36256B-133JCIN and IS61WV25636BLL-133TQLI, the CY7C1361C-133AXCT uniquely combines VDDQ flexibility, hardware-configurable burst mode, JTAG testability, and ZZ sleep - making it the only choice for automotive-grade or high-assurance embedded cache subsystems.

Availability

CY7C1361C-133AXCT is available at Aetrix Electronics and suitable for high-speed CPU cache buffers, network packet buffers, and industrial motion controller memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1361C-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including synchronous SRAMs engineered for deterministic timing and industrial reliability.

The CY7C1361C belongs to Cypress' legacy Flow-Through SRAM product line, specifically designed for zero-wait-state interfacing with x86 and RISC microprocessors in compute-intensive embedded systems.

FAQ

What is the function of the MODE pin on CY7C1361C-133AXCT?

The MODE pin selects burst address sequencing: HIGH configures interleaved addressing (e.g., 0, 4, 1, 5…), matching Intel Pentium™ L1 cache behavior; LOW selects linear addressing (0, 1, 2, 3…). This is a hardwired logic input sampled at the first rising CLK edge of a burst and cannot be changed mid-burst.

Does CY7C1361C-133AXCT support JTAG boundary scan in all package variants?

Yes - JTAG (IEEE 1149.1) is supported in the 119-ball BGA (2-CE with JTAG) and 165-ball FBGA (3-CE) packages. The 100-pin TQFP variant does not include dedicated TAP pins; JTAG functionality is unavailable in that package due to pin count constraints.

Can CY7C1361C-133AXCT operate with 2.5 V VDDQ while using 3.3 V VDD?

Yes - the device is explicitly rated for 3.3 V ±5%/+10% on VDD (core) and independently configurable 2.5 V or 3.3 V on VDDQ (I/O). This allows direct interfacing with 2.5 V FPGAs or ASICs while maintaining full 133 MHz performance and 6.5 ns tCO.

What is the minimum pulse width requirement for the ZZ pin to enter sleep mode?

The ZZ pin requires a minimum HIGH pulse width of 5 ns to reliably enter sleep mode. Wake-up occurs on the next rising CLK edge after ZZ returns LOW, with output drivers enabled within one clock cycle - no additional stabilization delay is required.

CY7C1361C-133AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1361C-133AXCT FAQ

1.How can I place an order for CY7C1361C-133AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1361C-133AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1361C-133AXCT reliable?

The price and inventory of CY7C1361C-133AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1361C-133AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1361C-133AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1361C-133AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1361C-133AXCT?

CY7C1361C-133AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1361C-133AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1361C-133AXCT?

For technical support, including CY7C1361C-133AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1361C-133AXCT requirements.

6.How does Aetrix verify that CY7C1361C-133AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1361C-133AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1361C-133AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1361C-133AXCT?

All CY7C1361C-133AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1361C-133AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1361C-133AXCT part is unused and in its original packaging.

Return procedure for CY7C1361C-133AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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