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Infineon Technologies CY7C1363B-100AC

Part No.:
CY7C1363B-100AC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1363B-100AC.pdf
Description:
IC SRAM 9MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,896

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Product details

Overview

CY7C1363B-100AC from Cypress Semiconductor is a 9-Mbit synchronous flow-through SRAM (512K × 18 configuration), designed for high-speed cache and buffer applications in microprocessor-based systems. It operates at 100 MHz with 8.5 ns clock-to-output delay, supports 2.5V/3.3V I/O (VDDQ), 3.3V ±5%/+10% core supply (VDD), and features user-selectable linear/interleaved burst modes via the MODE pin.

For engineers reviewing the CY7C1363B-100AC datasheet, CY7C1363B-100AC pinout, CY7C1363B-100AC application, or CY7C1363B-100AC equivalent, key selection criteria include burst timing control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE), synchronous self-timed write capability, and JEDEC-standard 100-pin TQFP packaging with dual CE support.

Technical Context

The CY7C1363B implements a synchronous, clock-driven architecture where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. A 2-bit internal burst counter captures A[1:0] at burst initiation and auto-increments addresses per ADV assertion, enabling 2-1-1-1 access rates.

Burst sequence type (linear vs. interleaved) is statically selected by the MODE pin; ADSP and ADSC provide separate processor/controller address strobe paths; CE1 (active-low) and CE2 (active-high) jointly enable device selection; ZZ enables asynchronous sleep mode with data retention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (512K × 18 organization), enabling compact high-bandwidth buffering in space-constrained designs.
Max Clock Frequency 100 MHz - defines maximum sustained burst throughput and system timing budget for synchronous bus interfaces.
Access Time (tCO) 8.5 ns - measured from CLK rise to valid DQ output, critical for meeting read setup windows in fast microprocessor buses.
VDD Supply Range 3.3 V ±5% / +10% (3.135 V to 3.63 V) - ensures compatibility with standard 3.3V logic rails while tolerating power rail variation.
VDDQ Supply Options 2.5 V or 3.3 V - allows direct interfacing with either 2.5V or 3.3V I/O domains without level-shifting circuitry.
Burst Mode Control MODE pin selects linear (LOW) or interleaved (HIGH) addressing - directly determines memory access pattern alignment with CPU cache line fetch behavior.
Write Architecture Synchronous self-timed write with global (GW) and byte-select (BWA–BWD + BWE) controls - enables precise partial-word updates without external timing logic.

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), RoHS-compliant, 0.5 mm pitch, 14 mm × 14 mm body size. Supports 2-chip-enable (AJ version) and 3-chip-enable (A version) configurations; this part (CY7C1363B-100AC) uses the 2-CE variant.

Pin Circuit Role Design Meaning
CLK Clock Input Rising-edge-triggered master timing reference for all synchronous registers and burst counter advancement.
ADSP / ADSC Address Strobe Inputs Separate processor (ADSP) and controller (ADSC) strobes - allow independent burst initiation from different bus masters without arbitration logic.
ADV Address Advance Controls internal burst address incrementing - asserted per cycle to generate sequential or interleaved addresses without external counter.
CE1 / CE2 Chip Enable Inputs CE1 (active-low) and CE2 (active-high) together determine device selection - enables hierarchical memory decoding in multi-SRAM systems.
BWA–BWD / BWE Byte Write Controls Four independent byte enables (BWA–BWD) qualified by BWE - permits 1–4 byte writes within a 18-bit word, reducing bus traffic and power.
DQ[0:17] Data I/O 18 bidirectional data lines - driven synchronously during reads, three-stated automatically during writes and deselection regardless of OE state.
OE Output Enable Asynchronous, active-low control of DQ direction - overrides synchronous timing for flexible read gating but masked during first read clock after deselect.
ZZ Sleep Mode Asynchronous, active-high entry into low-power sleep - reduces standby current to ≤30 mA while preserving data integrity without clock gating.

Key Features

Feature Design Value
2-1-1-1 Burst Access Rate Delivers four consecutive data words in five clock cycles - optimizes bandwidth utilization for CPU cache line fills without idle cycles.
User-Selectable Burst Order MODE pin configures linear (sequential) or interleaved (mod-4) addressing - matches Pentium-compatible or custom controller burst protocols.
Synchronous Self-Timed Write Internal write timing completion detection eliminates need for external write acknowledge or wait-state generation.
Dual-VDDQ I/O Support Independent 2.5V or 3.3V I/O supply (VDDQ) - simplifies integration into mixed-voltage systems and avoids level translators.
JEDEC-Standard TQFP Packaging 100-pin TQFP footprint compatible with industry-standard PCB layout rules and automated assembly processes.

Applications

L2 Cache Buffer Network Packet Buffer

Use Scenario: High-speed L2 cache between CPU and main memory in embedded x86 or PowerPC-based controllers.

IC Role / Device Role / Timing Role: Synchronous flow-through SRAM providing zero-wait-state burst reads aligned to CPU cache line size (64 bytes).

Use Value: 8.5 ns tCO and 2-1-1-1 access rate meet tight timing budgets for 100 MHz front-side bus operation without glue logic.

Use Scenario: Temporary storage for Ethernet or PCIe packet headers and payloads in switch fabric ASICs.

IC Role / Device Role / Timing Role: Dual-port-capable buffer supporting concurrent ingress/egress DMA transfers with burst-aligned addressing.

Use Value: Separate ADSP/ADSC strobes allow independent CPU and DMA controller access, minimizing arbitration overhead.

Industrial Motion Controller Memory Avionics Data Acquisition Buffer

Use Scenario: Real-time trajectory calculation buffer in servo drive firmware requiring deterministic memory latency.

IC Role / Device Role / Timing Role: Deterministic-flow SRAM with synchronous write and burst read - eliminates variable access jitter from asynchronous designs.

Use Value: Self-timed write and fixed 8.5 ns tCO guarantee worst-case timing compliance across temperature and voltage corners.

Use Scenario: High-integrity sensor data staging before ARINC-429 or MIL-STD-1553B transmission.

IC Role / Device Role / Timing Role: Radiation-tolerant (by design heritage) SRAM with ZZ sleep mode for power-gated subsystems during idle phases.

Use Value: ≤30 mA CMOS standby current and data-retentive sleep mode extend battery life in portable avionics modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV102418BLL-10TLI 1 M × 18, 10 ns tCO, 3.3V-only VDDQ, no ZZ sleep, 100-pin TQFP. Lacks MODE-selectable burst order and asynchronous sleep - requires external timing control for burst sequencing. Select when only basic synchronous SRAM functionality is needed and sleep mode is unnecessary.
AS7C31026B-10TCN 512K × 18, 10 ns tCO, 3.3V core/I/O, no ADSC/ADSP separation, no burst counter. Asynchronous interface with no burst support - requires full address re-driving per access, increasing bus load. Select for legacy designs using non-burst controllers where simplicity outweighs performance.

Compared with IS61WV102418BLL-10TLI and AS7C31026B-10TCN, the CY7C1363B-100AC uniquely delivers programmable burst order, dual address strobes, and integrated sleep mode - making it optimal for CPU-attached cache and low-power real-time buffers where timing determinism and feature integration matter.

Availability

CY7C1363B-100AC is available at Aetrix Electronics and suitable for L2 cache buffers, network packet buffers, industrial motion controllers, and avionics data acquisition systems requiring stable component supply, long-lifecycle support, and JEDEC-standard packaging.

Supply support for CY7C1363B-100AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC, and USB solutions for industrial, automotive, and communications markets.

The CY7C136x family was engineered specifically for high-bandwidth, low-latency synchronous buffering in microprocessor coherency domains - emphasizing burst efficiency, voltage flexibility, and seamless integration with Pentium-class and custom controller buses.

FAQ

What is the function of the MODE pin on CY7C1363B-100AC?

The MODE pin selects burst addressing sequence: tied LOW (GND) enables linear burst (sequential address increment), while HIGH (VDD or floating) enables interleaved burst (mod-4 address pattern). It is a static strap pin - must remain stable during operation and has an internal pull-up resistor.

Can CY7C1363B-100AC operate with a 2.5V I/O supply while using 3.3V core voltage?

Yes. The device supports independent VDD (3.3V ±5%/+10%) and VDDQ (2.5V or 3.3V) supplies. This allows direct connection to 2.5V FPGAs or ASICs without level shifters, while maintaining full 3.3V core performance and timing specifications.

How does the ZZ pin affect power consumption and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep mode with typical standby current ≤30 mA and full data retention. In normal operation, ZZ must be LOW or left floating (internal pull-down ensures safe default state).

What is the difference between ADSP and ADSC inputs?

ADSP (Address Strobe Processor) and ADSC (Address Strobe Controller) are independent synchronous inputs that initiate burst operations. When both are active, ADSP takes priority. This enables dual-master systems (e.g., CPU + DMA controller) to share the SRAM without external arbitration logic.

CY7C1363B-100AC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1363B-100AC FAQ

1.How can I place an order for CY7C1363B-100AC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1363B-100AC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1363B-100AC reliable?

The price and inventory of CY7C1363B-100AC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1363B-100AC is usually 5 days.

3.What payment methods are accepted for CY7C1363B-100AC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1363B-100AC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1363B-100AC?

CY7C1363B-100AC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1363B-100AC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1363B-100AC?

For technical support, including CY7C1363B-100AC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1363B-100AC requirements.

6.How does Aetrix verify that CY7C1363B-100AC is sourced from the original manufacturer or authorized distributors?

All CY7C1363B-100AC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1363B-100AC meets industry standards.

7.What is the process for return or replacement of CY7C1363B-100AC?

All CY7C1363B-100AC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1363B-100AC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1363B-100AC part is unused and in its original packaging.

Return procedure for CY7C1363B-100AC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1363B-100AC Tags

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