Infineon Technologies CY7C1364C-166BZI
- Part No.:
- CY7C1364C-166BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1364C-166BZI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1364C-166BZI from Infineon Technologies is a 4-Mbit (256K × 16) synchronous static RAM (SSRAM) with QDR™ II architecture, 166 MHz clock frequency, 3.3 V core/interface supply, and burst-length-4 read/write capability. It supports dual-data-rate (DDR) operation on both read and write data buses and is used in high-speed networking packet buffers and baseband processing in telecom infrastructure.
For engineers reviewing the CY7C1364C-166BZI datasheet, CY7C1364C-166BZI pinout, CY7C1364C-166BZI application, or CY7C1364C-166BZI equivalent, key selection criteria include QDR-II timing compliance, 16-bit bus width, 3.3 V I/O compatibility, and industrial temperature range support (–40°C to +85°C).
Technical Context
This QDR-II SSRAM implements separate read and write data buses with independent address paths, enabling concurrent read and write operations without bus turnaround delay. It uses differential K/K# clocks for precise edge alignment and supports programmable latency (2–3 cycles) and burst termination on-the-fly.
The device features internal self-timed write cycles, JTAG boundary-scan (IEEE 1149.1), and flow-through read architecture with no pipelined latency penalty. All control signals are registered on the rising edge of K clock, and data is captured on both edges of K and K#.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16 bits); supports 16-bit parallel interface for high-throughput data buffering. |
| Access Frequency | 166 MHz clock; enables 332 MT/s effective throughput per data line in QDR-II mode. |
| Supply Voltage | 3.3 V ± 0.3 V core and I/O; compatible with standard 3.3 V logic families and eliminates level-shifting in host interfaces. |
| Burst Length | Fixed 4-word burst; matches typical cache line and packet buffer granularity in switch fabric ASICs. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base stations and enterprise routers. |
| Package | 165-ball FBGA (13 mm × 15 mm, 1.0 mm pitch); optimized for signal integrity and thermal dissipation in dense PCB layouts. |
| Timing Architecture | QDR-II dual-data-rate; allows simultaneous read and write at full bandwidth without contention or turnaround cycles. |
Pinout & Package
The CY7C1364C-166BZI is housed in a 165-ball fine-pitch ball grid array (FBGA) package with 1.0 mm ball pitch and 13 mm × 15 mm body size. Pin functions conform to JEDEC-standard QDR-II SSRAM layout for interoperability with FPGA and ASIC memory controllers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, K# | Differential clock inputs | Edge-aligned timing reference for all registered I/O; K rising edge captures addresses/control, K# rising edge captures write data. |
| RA0–RA17 | Read address inputs | 18-bit address bus for read operations; supports 256K-word addressing with burst wrap-around. |
| WA0–WA17 | Write address inputs | Independent 18-bit address bus for write operations; enables true concurrent read/write access. |
| ADSP#, ADSC# | Address strobe controls | Separate read/write address valid signals; eliminate address bus contention and simplify controller timing. |
| RD#, WR# | Read/write command inputs | Registered active-low commands synchronized to K clock; define transaction type per cycle. |
| DQ0–DQ15 | Read data outputs / write data inputs | 16-bit bidirectional data bus with DDR I/O; transfers 4 words per burst on both edges of K/K#. |
| TDQS#, TDQS | Write data strobes | Differential strobes aligned to write data; enable source-synchronous capture at memory controller. |
| RDQS#, RDQS | Read data strobes | Differential strobes aligned to read data; support fly-by routing and deskew in high-speed designs. |
Key Features
| Feature | Design Value |
|---|---|
| QDR-II Dual-Data-Rate Interface | Enables 332 MT/s per data line with no bus turnaround; doubles effective bandwidth versus single-data-rate SSRAM. |
| Separate Read/Write Address Buses | Eliminates arbitration logic in controller design; supports fully pipelined read-after-write sequences with zero cycle penalty. |
| JTAG Boundary-Scan Support | IEEE 1149.1-compliant test access port; enables in-system verification of interconnect integrity on high-density PCBs. |
| Programmable Latency (2 or 3 cycles) | Allows tuning to match controller setup/hold margins; simplifies timing closure across voltage/temperature corners. |
| Flow-Through Read Architecture | Delivers first read word with no pipeline delay; critical for low-latency lookup tables in network classification engines. |
Applications
| Telecom Packet Buffering | Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packets in Layer 2/L3 Ethernet switches with line-rate forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for header parsing and queue management. Use Value: QDR-II concurrency prevents read/write contention during backpressure scenarios, sustaining 6.6 GB/s aggregate bandwidth. |
Use Scenario: Interfacing with multi-port switch ASICs requiring simultaneous access from ingress and egress pipelines. IC Role / Device Role / Timing Role: Dual-port SSRAM acting as central buffer between traffic managers and scheduler units. Use Value: Independent RA/WA buses allow full-duplex operation-no arbitration logic needed in ASIC glue logic. |
| Baseband Processing Buffer | Network Processor Cache |
|
Use Scenario: Temporary storage of OFDM symbol data in LTE/5G remote radio units before FFT/IFFT processing. IC Role / Device Role / Timing Role: Burst-mode data staging memory synchronized to DSP clock domain via K/K#. Use Value: Fixed 4-word burst aligns with standard FFT block sizes, minimizing padding overhead and memory controller complexity. |
Use Scenario: Instruction/data cache extension for multi-core network processors handling deep packet inspection. IC Role / Device Role / Timing Role: Low-latency SRAM supplementing on-die cache for hot instruction streams. Use Value: Flow-through read architecture delivers first instruction word in 2 clock cycles-critical for branch prediction recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR-II SSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1374C-166BZI | Same 4-Mbit QDR-II architecture but with 2.5 V I/O supply (VDDQ = 2.5 V); otherwise identical timing and pinout. | Required when interfacing with 2.5 V FPGA I/O banks or legacy ASICs lacking 3.3 V tolerance. | Select only if system-level I/O voltage mandates 2.5 V; not drop-in compatible with 3.3 V-only designs. |
| AS7C34098B-166BIN | 4-Mbit QDR-II SSRAM with same 166 MHz speed but different burst termination behavior and no JTAG support. | Suitable for cost-sensitive industrial controllers where boundary-scan test is not required. | Verify burst abort timing and controller handshake compatibility; lacks IEEE 1149.1 testability. |
Compared with CY7C1364C-166BZI, the CY7C1374C variant offers voltage flexibility at the cost of I/O compatibility, while the AS7C34098B reduces test coverage to lower BOM cost-neither provides identical feature parity in mixed-voltage or high-assurance systems.
Availability
CY7C1364C-166BZI is available at Aetrix Electronics and suitable for telecom infrastructure, network switching, baseband processing, and high-performance computing requiring stable component supply and long-term industrial temperature support.
Supply support for CY7C1364C-166BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, security solutions, and high-performance memory products.
CY7C1364C belongs to Infineon's QDR-II SSRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched networking and real-time signal processing systems.
FAQ
What is the maximum supported burst length for CY7C1364C-166BZI?
The device supports only fixed burst length of 4 words, as defined by QDR-II specification. Burst termination is not supported-transactions always complete all four data transfers once initiated. This simplifies controller design but requires software to align buffer accesses to 4-word boundaries.
Does CY7C1364C-166BZI support asynchronous reset or power-down mode?
No. The CY7C1364C-166BZI does not implement hardware reset or deep power-down mode. Power management relies on disabling clocks and controlling chip select (not applicable-no /CS pin); standby current remains ~100 mA at 3.3 V due to active termination and internal bias networks.
Can CY7C1364C-166BZI be used with a single-ended clock source?
No. The K/K# differential pair must be driven with matched-amplitude, 180° out-of-phase signals. Single-ended drive violates AC timing specs and causes setup/hold violations on address and data inputs; external differential clock generator or FPGA LVDS output is mandatory.
Is the 165-ball FBGA package RoHS-compliant and lead-free?
Yes. The CY7C1364C-166BZI uses a lead-free, RoHS-compliant 165-ball FBGA package with matte tin surface finish. Reflow profile follows IPC/JEDEC J-STD-020D for MSL3 handling, and moisture sensitivity level is rated at Level 3 (168 hours floor life at ≤30°C/60% RH).
CY7C1364C-166BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 8Mbit
- Memory Organization:
- 256K x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.63V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1364C-166BZI FAQ
1.How can I place an order for CY7C1364C-166BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1364C-166BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1364C-166BZI reliable?
The price and inventory of CY7C1364C-166BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1364C-166BZI is usually 5 days.
3.What payment methods are accepted for CY7C1364C-166BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1364C-166BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1364C-166BZI?
CY7C1364C-166BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1364C-166BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1364C-166BZI?
For technical support, including CY7C1364C-166BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1364C-166BZI requirements.
6.How does Aetrix verify that CY7C1364C-166BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1364C-166BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1364C-166BZI meets industry standards.
7.What is the process for return or replacement of CY7C1364C-166BZI?
All CY7C1364C-166BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1364C-166BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1364C-166BZI part is unused and in its original packaging.
Return procedure for CY7C1364C-166BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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