Infineon Technologies CY7C1365C-133BZI

Overview

CY7C1365C-133BZI from Cypress Semiconductor is a 9-Mbit (256 K × 32) flow-through synchronous SRAM with 3.3 V core supply, 2.5/3.3 V I/O supply, and 6.5 ns clock-to-output delay at 133 MHz. It serves as a secondary cache RAM for high-speed microprocessors such as Intel Pentium and i486, supporting both interleaved and linear burst sequences via MODE pin selection, and features synchronous self-timed write and asynchronous output enable.

For engineers reviewing the CY7C1365C-133BZI datasheet, CY7C1365C-133BZI pinout, CY7C1365C-133BZI application, or CY7C1365C-133BZI equivalent, key selection criteria include burst mode flexibility (interleaved vs. linear), dual-voltage I/O support (2.5 V/3.3 V), JTAG boundary scan compliance, synchronous address strobes (ADSP/ADSC), and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

The device implements a 2-bit on-chip wraparound burst counter that latches A[1:0] at the first clock edge of a burst and auto-increments addresses for subsequent beats. All synchronous inputs-including address, data, CE1/CE2/CE3, ADSP/ADSC/ADV, BW[A:D], BWE, and GW-are registered on the rising edge of CLK.

Asynchronous controls OE and ZZ operate independently of CLK: OE enables tri-state output control during reads, while ZZ places the device in low-power sleep mode with data retention. The memory array uses common I/O architecture with byte-write granularity controlled by four independent BW pins and BWE qualification.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm, 0.8 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous cache SRAM applications.

Compared with IS61WV25632ALL-133BLI and AS7C3256A-133JCIN, the CY7C1365C-133BZI uniquely delivers dual-voltage I/O, JTAG testability, and hardware-selectable burst modes - critical for legacy x86 cache designs requiring field-programmable behavior and production test coverage.

Availability

CY7C1365C-133BZI is available at Aetrix Electronics and suitable for Intel Pentium-based cache subsystems, i486-compatible embedded controllers, and multi-processor shared memory buffers requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1365C-133BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and programmable solutions for industrial, automotive, and computing applications.

The CY7C1365C belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for secondary cache implementations in x86-compatible processors and real-time embedded systems requiring deterministic burst timing and low-latency access.

FAQ

What is the function of the MODE pin on CY7C1365C-133BZI?

The MODE pin selects burst address sequencing: when tied to GND, it enables linear burst mode; when tied to VDD or left floating, it enables interleaved burst mode. This is a static strap pin-its state must be fixed before device operation begins and cannot be changed dynamically during burst cycles. Internal pull-up ensures safe default to interleaved mode if unconnected.

Can CY7C1365C-133BZI operate with only 2.5 V on VDDQ while VDD remains at 3.3 V?

Yes. The device is specified for 3.3 V core supply (VDD) and independent 2.5 V or 3.3 V I/O supply (VDDQ). This dual-voltage capability allows direct interfacing with 2.5 V logic families while maintaining full 3.3 V core performance. VDDQ must be stable before VDD during power-up, and both supplies must meet JEDEC JESD8-5 voltage tolerance requirements.

How does the ZZ pin affect power consumption and data retention?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode with typical standby current reduced to 40 mA maximum while preserving all stored data. The internal pull-down ensures ZZ defaults to LOW (active) if left unconnected. During sleep, synchronous inputs (CLK, ADSP, etc.) are ignored, but asynchronous OE and ZZ remain functional for wake-up control.

Is JTAG boundary scan mandatory for normal operation of CY7C1365C-133BZI?

No. JTAG is optional and disabled by default. If unused, TCK must be tied to VSS; TMS and TDI may be left floating or pulled to VDD; TDO should remain unconnected. Boundary scan functionality requires external JTAG controller and is only needed for production test or debug-not for runtime memory operation.