Infineon Technologies CY7C1370BV25-167AC

Overview

CY7C1370BV25 from Cypress Semiconductor is a 512K × 36-bit synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory interfaces in network packet buffers and telecom line cards. It operates at 167 MHz clock speed, delivers 3.4 ns access time, supports 4-word burst (linear or interleaved), and features individual byte write control (BWSa–BWSd) and three chip enables (CE1/CE2/CE3) for depth expansion.

For engineers reviewing the CY7C1370BV25 datasheet, CY7C1370BV25 pinout, CY7C1370BV25 application, or CY7C1370BV25 equivalent, this device is selected for zero-bus-latency buffering where deterministic timing, burst efficiency, and 2.5V I/O compatibility are critical - especially in FPGA-attached data-path subsystems requiring sustained 100% bus utilization.

Technical Context

The CY7C1370BV25 implements a fully registered synchronous interface: all address, data, and control signals (including ADV/LD, WE, BWSx, CE1–CE3, CEN) are latched on the positive edge of CLK. Its internal 2-bit burst counter generates four sequential addresses per ADV/LD assertion, with MODE pin selecting linear (MODE = LOW) or interleaved (MODE = HIGH) order.

It integrates pipelined read/write paths with registered outputs - eliminating OE timing constraints - and supports automatic power-down via ZZ (asynchronous sleep) or CE deselection. The device uses separate VDD (2.5V ±5%) and VDDQ (2.5V ±5%) supplies, with DQa–DQd as 8-bit bidirectional data buses and DPa–DPd as 1-bit parity I/O lines.

Key Specifications

Pinout & Package

Available in 100-pin TQFP (JEDEC MO-145AA) and 119-ball BGA (7×17 array) packages. Pin functions are synchronized to CLK except OE, MODE, and ZZ.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61LV51236A-167TQLI and MT55LSD25636P-167B, the CY7C1370BV25 uniquely combines 2.5V operation, individual byte write, ZZ sleep, and JTAG in a mature NoBL™ architecture - making it optimal for legacy telecom and instrumentation upgrades where reliability and pin compatibility outweigh raw bandwidth gains.

Availability

CY7C1370BV25 is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, FPGA-based protocol accelerators, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1370BV25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1370BV25 belongs to Cypress's NoBL™ synchronous SRAM product line, engineered specifically for zero-wait-state memory subsystems in high-speed data-path applications such as networking infrastructure and real-time signal processing.

FAQ

What is the function of the MODE pin, and can it be left unconnected?

The MODE pin selects burst sequence order: HIGH enables interleaved burst, LOW enables linear burst. It must remain static during operation. If left floating, internal pull-up defaults MODE to HIGH (interleaved). For guaranteed behavior, tie MODE to VDD (interleaved) or VSS (linear) - do not leave floating in production designs.

How does the CY7C1370BV25 handle simultaneous read and write to the same address?

The device follows standard synchronous SRAM protocol: if WE is LOW (write) and OE is LOW (output enabled) on the same cycle, the output drivers enter high-impedance state during the write data window. No bus contention occurs - write data is latched and stored, while outputs are three-stated regardless of OE state during write execution.

Is the ZZ pin compatible with automatic power-down during idle periods?

Yes - asserting ZZ HIGH places the device in non-time-critical sleep mode with data retention. All internal states are preserved, and wake-up occurs within one clock cycle after ZZ returns LOW. This feature is fully asynchronous and independent of CEN or CE status, enabling precise power-gating control in burst-idle intervals.

Can CE2 be used as an active-LOW enable like CE1 and CE3?

No - CE2 is defined as active-HIGH per datasheet pin definition. Using it as active-LOW would invert its logical function and break depth-expansion timing. For consistent active-LOW control across all chip enables, use CE1 and CE3 only, and tie CE2 HIGH (or route via inverter if board-level logic requires uniform polarity).