Infineon Technologies CY7C1370DV25-167AXCT
- Part No.:
- CY7C1370DV25-167AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1370DV25-167AXCT.pdf
- Description:
- IC SRAM 18MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:4,763
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Product details
Overview
CY7C1370DV25-167AXCT from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with 3.4 ns clock-to-output time, supports zero-wait-state burst reads/writes, and uses dual power supplies (2.5 V core VDD, 2.5 V I/O VDDQ).
For engineers reviewing the CY7C1370DV25-167AXCT datasheet, CY7C1370DV25-167AXCT pinout, CY7C1370DV25-167AXCT application, or CY7C1370DV25-167AXCT equivalent, key selection criteria include pipelined read/write coherency, byte-write select control (BWa–BWd), synchronous self-timed write timing, and JEDEC-standard 100-pin TQFP packaging with ZZ sleep mode support.
Technical Context
The device implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. Its NoBL™ logic eliminates bus latency by enabling true back-to-back read/write operations without wait states.
Burst operation supports both linear and interleaved orders via the MODE strap pin; write cycles use on-chip self-timed circuitry with byte-level granularity controlled by four independent BW signals and WE. Three chip enables (CE1/CE2/CE3) and asynchronous OE provide flexible bank selection and output three-state control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 organization) |
| Max Clock Frequency | 167 MHz - enables sustained 167 MT/s throughput with no wait states |
| Access Time | 3.4 ns - clock-to-output delay under 167 MHz conditions |
| Power Supplies | VDD = 2.5 V ± 0.2 V (core); VDDQ = 2.5 V ± 0.2 V (I/O) - decoupled domains reduce noise coupling |
| Operating Current | 275 mA max - measured at 167 MHz, full-burst operation |
| Standby Current | 70 mA max - CMOS standby current with CEN HIGH and CE1/CE2/CE3 inactive |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm) - JEDEC-standard Pb-free, RoHS-compliant |
Pinout & Package
Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm), lead-free, RoHS-compliant, JEDEC MO-145AC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | Synchronous address bus; sampled on rising CLK edge to select one of 512K locations |
| BWa–BWd | Byte Write Select | Active-low synchronous controls for DQa/DQPa, DQb/DQPb, DQc/DQPc, DQd/DQPd respectively |
| CLK | Clock Input | Rising-edge-triggered master clock; qualified by CEN to enable/disable recognition |
| CEN | Clock Enable | Active-low synchronous signal that gates CLK; deassertion extends previous cycle without deselection |
| CE1, CE3 | Chip Enable | Active-low synchronous enables; CE2 is active-high - used jointly for multi-bank decoding |
| OE | Output Enable | Asynchronous, active-low control for I/O direction; masked during write data phase to prevent bus contention |
| ZZ | Sleep Mode | Asynchronous input that places device in low-power sleep; requires external tie to GND per errata (Pin 64) |
| DQa–DQd, DQPa–DQPd | Data I/O | 36-bit bidirectional data bus with parity; each byte pair driven by corresponding BW signal |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited consecutive read/write transitions with zero wait states - critical for packet buffering in switch fabric designs |
| Fully Registered Interface | All inputs and outputs synchronized to CLK rising edge - eliminates setup/hold violations in high-speed PCB layouts |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse generation - simplifies controller interface logic |
| Byte-Write Select Granularity | Four independent BW lines allow partial-word writes without read-modify-write cycles - reduces bus traffic in protocol processing |
| Interleaved/Linear Burst Mode | MODE pin selects burst order at power-up - supports legacy ZBT™ system compatibility or optimized cache-line access patterns |
Applications
| Telecom Line Cards | Network Switch Buffers |
|---|---|
|
Use Scenario: High-speed packet buffering in OC-192/STM-64 line interface units requiring deterministic latency and burst coherency. IC Role / Device Role / Timing Role: Primary pipeline SRAM for ingress/egress FIFOs, interfacing directly with SerDes PHYs and traffic manager ASICs. Use Value: 167 MHz zero-wait-state operation sustains 6 Gbps aggregate bandwidth across 36-bit bus - matches OC-192 line rate requirements. |
Use Scenario: Shared buffer memory in Layer 2/L3 Ethernet switches handling 10G/40G port aggregation. IC Role / Device Role / Timing Role: Backplane-facing SRAM providing non-blocking read/write access for packet classification and forwarding engines. Use Value: Byte-write capability enables efficient header modification without full-word overwrites - reduces memory bandwidth pressure by up to 40%. |
| Baseband Processing Units | Radar Signal Processors |
|
Use Scenario: Real-time channel coding/decoding buffers in LTE/5G macro base stations with strict jitter tolerance. IC Role / Device Role / Timing Role: Synchronous memory for turbo decoder interleavers and Viterbi traceback buffers. Use Value: Fully registered interface ensures sub-100 ps clock skew tolerance - meets 3GPP TS 36.104 timing stability requirements. |
Use Scenario: Pulse-Doppler processing memory in airborne AESA radar systems requiring radiation-tolerant, deterministic access. IC Role / Device Role / Timing Role: Pipeline SRAM for FFT windowing and CFAR detection stages operating under tight real-time deadlines. Use Value: ZZ sleep mode reduces standby power to <1 mW during inter-pulse intervals - extends thermal margin in conduction-cooled modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L16PF | 16-Mbit (512K × 32), 167 MHz, 3.5 ns tCO, 3.3 V only (VDD/VDDQ) | Lacks parity bits (DQPx) and ZZ sleep mode; requires level-shifting for 2.5 V systems | Select when parity checking is unnecessary and 3.3 V I/O compatibility is required. |
| ISSI IS61WV102436BLL-167TQLI | 18-Mbit (512K × 36), 167 MHz, 3.4 ns tCO, 2.5 V core/I/O, but no MODE pin or interleaved burst | Fixed linear burst only; no hardware-selectable burst order - limits ZBT™ migration path | Select when burst order is fixed and JTAG boundary scan is not required. |
Compared with IDT72V2115L16PF and IS61WV102436BLL-167TQLI, CY7C1370DV25-167AXCT uniquely combines 2.5 V dual-supply operation, hardware-configurable burst order, parity I/O, and integrated ZZ sleep - making it optimal for upgrade paths from ZBT™-based telecom infrastructure.
Availability
CY7C1370DV25-167AXCT is available at Aetrix Electronics and suitable for telecom line card design, network switch buffer implementation, and radar signal processor development requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1370DV25-167AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in packet-switched infrastructure where deterministic timing and burst coherency are mandatory.
FAQ
What is the function of the MODE pin on CY7C1370DV25-167AXCT?
The MODE pin is a strap input that selects burst address order: pulled HIGH (or left floating) enables interleaved burst mode; pulled LOW enables linear burst mode. It must be held static during operation and is sampled at power-up/reset. This allows hardware-level compatibility with either ZBT™-legacy (interleaved) or cache-optimized (linear) system architectures without firmware changes.
How does the ZZ pin operate, and what is the errata requirement?
The ZZ pin places the device into ultra-low-power sleep mode when asserted LOW. Per documented errata (page 30), Pin 64 (ZZ) must be externally tied to ground - it is not internally terminated and will not function correctly if left floating or pulled high. This external connection is mandatory for reliable sleep entry/exit behavior.
Can CY7C1370DV25-167AXCT operate with only VDD powered and VDDQ unpowered?
No. Both VDD (2.5 V core) and VDDQ (2.5 V I/O) must be powered within specification before applying CLK or any input signals. The device lacks I/O isolation circuitry between VDDQ and internal logic; unpowered VDDQ risks latch-up or undefined I/O states, violating Absolute Maximum Ratings in Section 21 of the datasheet.
Is JTAG boundary scan functional on this device?
JTAG (IEEE 1149.1) is physically implemented but not guaranteed for production testing. Per errata (page 30), JTAG must be used only in BYPASS mode - TAP functionality is not characterized or validated. For debug or test, rely on functional I/O verification rather than scan-chain diagnostics.
CY7C1370DV25-167AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1370DV25-167AXCT FAQ
1.How can I place an order for CY7C1370DV25-167AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1370DV25-167AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1370DV25-167AXCT reliable?
The price and inventory of CY7C1370DV25-167AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370DV25-167AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1370DV25-167AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1370DV25-167AXCT transactions.
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CY7C1370DV25-167AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1370DV25-167AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1370DV25-167AXCT?
For technical support, including CY7C1370DV25-167AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370DV25-167AXCT requirements.
6.How does Aetrix verify that CY7C1370DV25-167AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1370DV25-167AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370DV25-167AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1370DV25-167AXCT?
All CY7C1370DV25-167AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370DV25-167AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1370DV25-167AXCT part is unused and in its original packaging.
Return procedure for CY7C1370DV25-167AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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