Infineon Technologies CY7C1370DV25-200BZCT
- Part No.:
- CY7C1370DV25-200BZCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1370DV25-200BZCT.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1370DV25-200BZCT from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in network packet buffers, telecom line cards, and FPGA co-processor caches. It operates at 200 MHz with zero wait states, features 2.5 V core (VDD) and I/O (VDDQ) supplies, 3.0 ns clock-to-output time, and supports linear/interleaved burst reads/writes.
For engineers reviewing the CY7C1370DV25-200BZCT datasheet, CY7C1370DV25-200BZCT pinout, CY7C1370DV25-200BZCT application, or CY7C1370DV25-200BZCT equivalent, this page delivers verified timing behavior, byte-write control logic, ZZ sleep mode implementation, and JEDEC-compliant 100-pin TQFP package integration details.
Technical Context
The device implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. Its NoBL™ logic enables true back-to-back read/write operations without bus latency, eliminating pipeline stalls during mixed-access patterns.
Burst addressing is controlled by ADV/LD and MODE pins-linear or interleaved order selected at power-up-and write operations use synchronous self-timed circuitry qualified by WE and four byte-write selects (BWa–BWd), each governing a 9-bit data/parity group (DQa/DQPa through DQd/DQPd).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 organization), enabling single-chip replacement for dual 9-Mbit ZBT SRAMs in 36-bit data paths. |
| Max Clock Frequency | 200 MHz - supports sustained 400 MT/s throughput with no wait states in pipelined burst mode. |
| Access Time | 3.0 ns clock-to-output - ensures deterministic timing closure in high-speed FPGA or ASIC memory interfaces. |
| Supply Voltages | VDD = 2.5 V ±0.2 V (core), VDDQ = 2.5 V ±0.2 V (I/O) - requires separate low-noise regulation for signal integrity. |
| Power Consumption | 300 mA max operating current - defines thermal budget for dense PCB layouts in telecom line cards. |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm, Pb-free) - JEDEC-standard footprint compatible with automated SMT assembly. |
| Sleep Mode | ZZ pin (Pin 64) must be externally tied to GND - enables low-power standby with CMOS standby current ≤70 mA. |
Pinout & Package
Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm, Pb-free, JEDEC MO-145AC).
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | 19-bit synchronous address bus sampled on rising CLK edge; selects one of 512K locations in 36-bit word space. |
| BWa–BWd | Byte Write Select | Four active-LOW synchronous controls - BWa governs DQa/DQPa (bits 0–8), BWb governs DQb/DQPb (9–17), etc. |
| CLK | Clock Input | Rising-edge-triggered master clock; qualified by CEN - no internal clock division or PLL required. |
| CE1, CE2, CE3 | Chip Enable Group | Three-level synchronous enable: CE1/CE3 active LOW, CE2 active HIGH - enables multi-bank memory decoding. |
| DQa–DQd / DQPa–DQPd | Data I/O + Parity | 36-bit bidirectional data bus + 4-bit parity (9-bit groups); direction controlled by OE and internal write detection. |
| ZZ | Sleep Control | Asynchronous sleep input - must be hard-wired to GND per errata (Page 30); disables outputs and reduces current to ≤70 mA. |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Enables unlimited consecutive read/write cycles with zero bus latency - eliminates pipeline bubbles in burst-intensive traffic shaping. |
| Internally Self-Timed Output Buffer | Removes need for external OE timing control - simplifies PCB layout and eliminates setup/hold violations on OE trace routing. |
| Synchronous Byte Write | Four independent 9-bit write masks (BWa–BWd) allow partial-word updates without read-modify-write overhead. |
| IEEE 1149.1 JTAG Support | Boundary-scan capability enabled (though JTAG testing recommended in BYPASS mode per errata - Page 30). |
| Burst Addressing Flexibility | MODE pin selects linear or interleaved burst order at power-up - matches legacy ZBT or modern cache-line access patterns. |
Applications
| Network Packet Buffer | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with real-time latency constraints. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controllers and traffic managers. Use Value: 200 MHz zero-wait-state operation sustains 400 MT/s throughput across back-to-back packet bursts without stalling the data path. |
Use Scenario: Serving as shared instruction/data cache between DSPs and FPGAs in E1/T1 framing and SONET/SDH processing modules. IC Role / Device Role / Timing Role: Pipelined burst SRAM providing deterministic 3.0 ns clock-to-output timing for tight loop execution. Use Value: Fully registered interface eliminates clock skew sensitivity, enabling reliable timing closure at 200 MHz in multi-FPGA systems. |
| FPGA Co-Processor Memory | Industrial Protocol Gateway |
|
Use Scenario: Offloading memory-intensive tasks (e.g., encryption lookup tables, motion control trajectory buffers) from main CPU to FPGA-accelerated subsystems. IC Role / Device Role / Timing Role: External high-speed memory mapped via FPGA AXI or Avalon-MM interface with burst-length optimization. Use Value: Byte-write capability (BWa–BWd) allows efficient partial updates of cryptographic keys or motion profiles without full-word overwrites. |
Use Scenario: Enabling protocol translation between Modbus TCP, PROFINET, and EtherCAT in industrial edge gateways requiring deterministic response. IC Role / Device Role / Timing Role: Dual-port-like behavior achieved via NoBL™ back-to-back reads/writes for concurrent protocol stack buffering. Use Value: ZZ sleep mode (GND-tied) reduces standby power to ≤70 mA - critical for fanless, sealed gateway enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 18-Mbit (512K × 36), 167 MHz max, 3.4 ns tCO, 2.5 V only, 100-pin TQFP - slower speed grade, identical pinout. | Limited to 167 MHz systems; suitable where 200 MHz margin is unnecessary and cost optimization is prioritized. | Select when system clock is ≤167 MHz and legacy IDT supply chain alignment is required. |
| ISSI IS61WV102436BLL-200TQLI | 18-Mbit (512K × 36), 200 MHz, 3.0 ns tCO, 2.5 V core/I/O, 100-pin TQFP - functionally equivalent but lacks JTAG and ZZ sleep mode. | No hardware sleep control; relies on CEN-only power management - higher standby current (~120 mA vs. ≤70 mA). | Choose when JTAG testability is not needed and board-level power sequencing already handles low-power states. |
Compared with IDT72V2115L15PF and IS61WV102436BLL-200TQLI, CY7C1370DV25-200BZCT uniquely combines 200 MHz performance, guaranteed ZZ sleep mode (with GND tie), and IEEE 1149.1 boundary scan - making it optimal for telecom and industrial designs demanding timing rigor, test coverage, and thermal efficiency.
Availability
CY7C1370DV25-200BZCT is available at Aetrix Electronics and suitable for network packet buffers, telecom line card caches, and FPGA co-processor memory subsystems requiring stable component supply across extended production lifecycles.
Supply support for CY7C1370DV25-200BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
This device belongs to Cypress's NoBL™ SRAM product line - engineered specifically for zero-latency, high-throughput memory subsystems in packet-switching infrastructure and real-time embedded control applications.
FAQ
What is the required connection for the ZZ pin on CY7C1370DV25-200BZCT?
The ZZ pin (Pin 64) must be externally connected to ground per documented errata (Page 30 of Rev. *P). This hard tie enables the low-power sleep mode, reducing standby current to ≤70 mA. Leaving ZZ floating or pulling it HIGH disables sleep functionality and may cause undefined behavior.
Does CY7C1370DV25-200BZCT support true dual-port operation?
No - it is a synchronous single-port SRAM with pipelined NoBL™ architecture. While it enables back-to-back reads and writes without wait states, it does not support simultaneous independent read/write access like a true dual-port RAM. Data coherency is maintained via internal write-data steering and output register synchronization.
Can the MODE pin be changed dynamically during operation?
No - the MODE pin is a strap pin sampled at power-up to configure burst order (linear or interleaved). Changing MODE during active operation violates timing and may cause unpredictable burst address generation. It must remain static after initialization.
Is JTAG boundary scan functional on CY7C1370DV25-200BZCT?
JTAG is physically implemented per IEEE 1149.1, but Cypress explicitly advises performing JTAG testing in BYPASS mode due to unguaranteed functionality (errata, Page 30). Production test should rely on functional I/O verification rather than full boundary-scan diagnostics.
CY7C1370DV25-200BZCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1370DV25-200BZCT FAQ
1.How can I place an order for CY7C1370DV25-200BZCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1370DV25-200BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1370DV25-200BZCT reliable?
The price and inventory of CY7C1370DV25-200BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370DV25-200BZCT is usually 5 days.
3.What payment methods are accepted for CY7C1370DV25-200BZCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1370DV25-200BZCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1370DV25-200BZCT?
CY7C1370DV25-200BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1370DV25-200BZCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1370DV25-200BZCT?
For technical support, including CY7C1370DV25-200BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370DV25-200BZCT requirements.
6.How does Aetrix verify that CY7C1370DV25-200BZCT is sourced from the original manufacturer or authorized distributors?
All CY7C1370DV25-200BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370DV25-200BZCT meets industry standards.
7.What is the process for return or replacement of CY7C1370DV25-200BZCT?
All CY7C1370DV25-200BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370DV25-200BZCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1370DV25-200BZCT part is unused and in its original packaging.
Return procedure for CY7C1370DV25-200BZCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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