Infineon Technologies CY7C1370DV25-250AXC

Overview

CY7C1370DV25-250AXC from Cypress Semiconductor is a 18-Mbit (512 K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom infrastructure. It supports true back-to-back read/write operations at 250 MHz with zero wait states, features 2.5 V core (VDD) and I/O (VDDQ) supplies, and delivers 2.6 ns clock-to-output timing. Used in packet buffer and cache applications requiring deterministic latency and burst data transfer.

For engineers reviewing the CY7C1370DV25-250AXC datasheet, CY7C1370DV25-250AXC pinout, CY7C1370DV25-250AXC application, or CY7C1370DV25-250AXC equivalent, key selection criteria include pipelined burst capability (linear/interleaved), byte-write control via BWa–BWd, synchronous self-timed writes, JTAG boundary scan compliance, and TQFP-100 package compatibility with ZBT™-legacy systems.

Technical Context

The device implements fully registered synchronous interfaces: all address, control, and data inputs pass through input registers on CLK rising edge; all outputs are latched by output registers on the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without pipeline stalls.

Internal self-timed output buffer control removes dependency on asynchronous OE for three-state management, while synchronous CEN allows cycle extension without deselection. Burst addressing is determined by MODE strap (interleaved when floating/high, linear when grounded), and write coherency is maintained via on-chip registry and steering logic across four 9-bit data groups (DQa–DQd + DQPa–DQPd).

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch). Pin functions validated per Cypress Document 38-05558 Rev. *G.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V251L15PF and IS61WV102436B, CY7C1370DV25-250AXC uniquely delivers 250 MHz zero-wait-state operation with integrated JTAG and ZZ sleep-making it optimal for next-generation telecom line cards where timing determinism, test coverage, and dynamic power scaling are mandatory.

Availability

CY7C1370DV25-250AXC is available at Aetrix Electronics and suitable for packet buffering in Ethernet switches, cache memory in telecom line cards, and backplane interface memory requiring stable component supply across long-lifecycle deployments.

Supply support for CY7C1370DV25-250AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC, and connectivity solutions for industrial and communications markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-bandwidth memory subsystems in networking silicon where bus latency directly impacts system throughput.

FAQ

What is the function of the MODE pin on CY7C1370DV25-250AXC?

The MODE pin selects burst address sequencing: when left floating or tied HIGH, it configures interleaved burst order; when pulled LOW, it selects linear burst order. This setting must remain static during operation and is sampled at power-up or reset. It directly maps to the burst counter logic in the address steering block and cannot be changed dynamically.

How does the ZZ (deep sleep) mode reduce power consumption?

Asserting ZZ asynchronously places the SRAM into deep sleep, disabling internal clocks, array refresh, and I/O drivers. This reduces CMOS standby current to under 100 µA - a 70% reduction versus normal standby - while preserving data in the memory array. Exit is synchronous to the next valid CLK edge after ZZ deassertion.

Can CY7C1370DV25-250AXC operate with only VDD powered and VDDQ unpowered?

No. Both VDD (2.5 V core) and VDDQ (2.5 V I/O) must be within specification before applying CLK or any input signals. Powering only VDD risks latch-up or undefined I/O behavior because DQ/DQP drivers require VDDQ for proper termination and level translation. The datasheet specifies simultaneous ramping and monotonic power sequencing.

Is the ADV/LD pin required for non-burst operations?

ADV/LD is only active during burst sequences. For single-address accesses, it may be held HIGH or LOW with no functional impact. During burst reads/writes, it advances the internal counter when HIGH; when LOW, it loads a new base address - essential for wrapping or restarting bursts after interrupt events.