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Infineon Technologies CY7C1370DV25-250AXCT

Part No.:
CY7C1370DV25-250AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1370DV25-250AXCT.pdf
Description:
IC SRAM 18MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,378

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Product details

Overview

CY7C1370DV25-250AXCT from Cypress Semiconductor is a 18-Mbit (512 K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom infrastructure. It operates at 250 MHz with zero wait states, delivers 2.6 ns clock-to-output time, supports byte-write via four BW inputs, and uses dual 2.5 V supplies (VDD core, VDDQ I/O).

For engineers reviewing the CY7C1370DV25-250AXCT datasheet, CY7C1370DV25-250AXCT pinout, CY7C1370DV25-250AXCT application, or CY7C1370DV25-250AXCT equivalent, key selection criteria include pipelined burst timing, synchronous self-timed write control, JTAG boundary scan support, and compatibility with ZBT™-based system designs requiring back-to-back read/write transitions.

Technical Context

The device implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, while outputs pass through output registers also clocked by CLK. Its NoBL™ logic eliminates bus latency by enabling true back-to-back read/write operations without wait states, sustaining full 250 MHz throughput across consecutive cycles.

Burst addressing is configurable via the MODE pin (interleaved or linear), and write operations are controlled synchronously using WE and four byte-write selects (BWa–BWd). Output drivers are automatically three-stated during write data phases to prevent bus contention, independent of OE state.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512 K × 36 organization)
Max Clock Frequency 250 MHz - enables zero-wait-state operation in high-speed packet buffering
Access Time 2.6 ns - defines minimum clock-to-output delay for timing-critical read paths
Supply Voltages VDD = 2.5 V ±0.2 V (core), VDDQ = 2.5 V ±0.2 V (I/O) - requires separate low-noise regulation
Byte Write Control Four independent BW inputs (BWa–BWd) - allows selective 9-bit writes to DQa–DQd banks
Burst Capability Linear or interleaved burst order - selected by MODE pin strap, fixed per power-up
JTAG Support IEEE 1149.1-compliant boundary scan - enables production test and interconnect verification

Pinout & Package

Package: 100-pin TQFP (JEDEC-standard Pb-free), 14 × 14 mm body, 0.5 mm pitch. Pin layout optimized for signal integrity in high-speed memory buses with dedicated VDDQ/VSS pairs adjacent to DQ groups.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Synchronous address input 18-bit address bus sampled on rising CLK edge; supports full 512K depth addressing
BWa–BWd Synchronous byte write enable Active-low controls 9-bit write masking for DQa/DQPa through DQd/DQPd groups
CLK Primary synchronous clock Rising-edge-triggered master clock; qualified by CEN; drives all internal registers
CEN Clock enable Active-low gate for CLK; suspends operation without deselecting device or losing state
CE1/CE2/CE3 Chip enable group Three-input decode for bank selection; CE1/CE3 active-low, CE2 active-high
DQa–DQd, DQPa–DQPd Bidirectional data I/O 36-bit data + 4-bit parity interface; direction controlled by OE and internal write sequencing
OE Asynchronous output enable Active-low; masked during write data phase to enforce automatic three-state behavior
MODE Burst order configuration Strap pin: HIGH = interleaved burst, LOW = linear burst; must be stable before initialization
ADV/LD Burst counter control HIGH advances internal address counter; LOW loads new address from A[17:0]
ZZ Deep sleep mode Active-low entry into low-power standby; reduces ICC to ≤70 mA typical

Key Features

Feature Design Value
No Bus Latency™ architecture Enables unlimited back-to-back read/write cycles with no wait states at 250 MHz
Fully registered I/O All inputs and outputs synchronized to CLK rising edge - simplifies timing closure in FPGA-ASIC interfaces
Synchronous self-timed writes On-chip write timing control eliminates external write pulse width constraints
Configurable burst order Interleaved or linear burst via MODE pin - matches legacy ZBT or modern cache-line access patterns
IEEE 1149.1 JTAG Full boundary-scan support with TCK/TMS/TDI/TDO - enables automated PCB test and debug

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switch fabric buffers.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as primary packet buffer with deterministic 2.6 ns read access.

Use Value: Enables full 250 MHz back-to-back read/write without arbitration stalls, increasing switch throughput by >30% vs. asynchronous SRAM.

Use Scenario: Serving as descriptor and payload memory in OC-192/STM-64 line cards handling SONET/SDH frame processing.

IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly with SerDes MAC controllers for frame header and payload storage.

Use Value: Byte-write capability (BWa–BWd) allows efficient partial updates of frame descriptors without full-word overwrites.

Baseband Processing Cache Industrial Real-Time Controller

Use Scenario: Acting as L2 cache for DSP-based LTE/5G baseband processors performing FFT, channel estimation, and modulation.

IC Role / Device Role / Timing Role: Pipelined SRAM providing zero-wait-state instruction/data fetch to multi-core baseband engines.

Use Value: Fully registered interface ensures setup/hold compliance with 4 ns clock period, eliminating external timing margining.

Use Scenario: Supporting deterministic memory access in safety-critical PLCs and motion controllers requiring sub-microsecond response.

IC Role / Device Role / Timing Role: Deterministic-access SRAM used for real-time task stacks, I/O mapping, and interrupt vector tables.

Use Value: ZZ sleep mode reduces standby current to ≤70 mA, meeting industrial temperature-grade power budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L15PF 16-Mbit (512 K × 32), 150 MHz max, 3.3 V I/O only, no parity pins Lacks DQP parity I/O and MODE-configurable burst; limited to 32-bit data path Choose when parity checking is unnecessary and system voltage is strictly 3.3 V.
ISSI IS61WV102436B 36-Mbit (1 M × 36), 166 MHz max, 3.3 V core/I/O, no JTAG or ZZ mode Higher density but lower speed; lacks IEEE 1149.1 scan and deep-sleep control Choose for cost-sensitive applications where 250 MHz timing and testability are not required.

Compared with IDT72V2115L15PF and IS61WV102436B, the CY7C1370DV25-250AXCT uniquely combines 250 MHz operation, 36-bit + parity I/O, JTAG testability, and configurable burst modes-making it optimal for next-generation telecom and networking systems demanding both performance and production test coverage.

Availability

CY7C1370DV25-250AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial real-time controller applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1370DV25-250AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory subsystems in packet-switched infrastructure where deterministic timing and burst efficiency are critical.

FAQ

What is the function of the MODE pin on CY7C1370DV25-250AXCT?

The MODE pin is a static configuration input that selects burst addressing order: tied HIGH (or left floating) enables interleaved burst, while pulled LOW selects linear burst. It must remain stable during device operation and is sampled at power-up initialization. This setting determines how the internal address counter increments during burst reads/writes and cannot be changed dynamically.

How does the ZZ pin reduce power consumption?

The ZZ pin places the device into deep sleep mode when asserted LOW, reducing core supply current (ICC) to ≤70 mA typical while retaining memory contents. In this state, CLK, CEN, and all control inputs are ignored except ZZ itself. Exit from ZZ mode requires ZZ HIGH followed by two valid CLK cycles before normal operation resumes.

Can CY7C1370DV25-250AXCT operate with only one power supply?

No. The device requires two independent 2.5 V supplies: VDD (core logic) and VDDQ (I/O interface). These must be decoupled separately per JEDEC TQFP layout guidelines. Mixing or sharing supplies violates absolute maximum ratings and causes timing violations or data corruption due to I/O-to-core voltage mismatch.

Is the ADV/LD pin required for non-burst operation?

Yes. Even in single-access mode, ADV/LD must be driven LOW before each new address load to ensure correct address capture. During burst sequences, ADV/LD is held HIGH to auto-increment the internal counter. Leaving ADV/LD unconnected or floating risks metastability and unpredictable address behavior on the first access after deselect.

CY7C1370DV25-250AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
2.6 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1370DV25-250AXCT FAQ

1.How can I place an order for CY7C1370DV25-250AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1370DV25-250AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1370DV25-250AXCT reliable?

The price and inventory of CY7C1370DV25-250AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370DV25-250AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1370DV25-250AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1370DV25-250AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1370DV25-250AXCT?

CY7C1370DV25-250AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1370DV25-250AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1370DV25-250AXCT?

For technical support, including CY7C1370DV25-250AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370DV25-250AXCT requirements.

6.How does Aetrix verify that CY7C1370DV25-250AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1370DV25-250AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370DV25-250AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1370DV25-250AXCT?

All CY7C1370DV25-250AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370DV25-250AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1370DV25-250AXCT part is unused and in its original packaging.

Return procedure for CY7C1370DV25-250AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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