Infineon Technologies CY7C1370KV25-167AXCT
- Part No.:
- CY7C1370KV25-167AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1370KV25-167AXCT.pdf
- Description:
- IC SRAM 18MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:2,318
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Product details
Overview
CY7C1370KV25-167AXCT from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 167 MHz with 3.4 ns clock-to-output delay, uses dual 2.5 V supplies (VDD core, VDDQ I/O), and supports byte write via four BW inputs - deployed in networking packet buffers and telecom line cards.
For engineers reviewing the CY7C1370KV25-167AXCT datasheet, CY7C1370KV25-167AXCT pinout, CY7C1370KV25-167AXCT application, or CY7C1370KV25-167AXCT equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous self-timed write timing, JTAG boundary-scan support, and TQFP-100 package compatibility with ZBT™-legacy designs.
Technical Context
This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to the same edge. The internal NoBL™ logic eliminates bus latency by enabling true consecutive read/write cycles without wait states.
Burst access is configurable via MODE pin (interleaved or linear), while ADV/LD controls address counter advancement or new address loading. Write operations use synchronous self-timed circuitry qualified by WE and BWa–BWd, and output drivers are synchronously three-stated during write data phases to prevent bus contention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 organization) |
| Max Clock Frequency | 167 MHz - enables sustained 167 MT/s throughput with no wait states |
| Access Time (tCO) | 3.4 ns - guaranteed clock-to-output delay for timing-critical synchronous interfaces |
| Supply Voltages | VDD = 2.5 V ±0.2 V (core); VDDQ = 2.5 V ±0.2 V (I/O) - decoupled power domains reduce noise coupling |
| Burst Capability | Linear or interleaved - selected by MODE pin strap; determines address increment pattern during burst reads/writes |
| Byte Write Control | Four independent BWa–BWd inputs - enable selective 9-bit writes to DQa/DQPa through DQd/DQPd groups |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing in dense PCB assemblies |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | Synchronous address bus; latched on rising CLK edge when CEN active |
| BWa–BWd | Byte Write Select | Active-low synchronous controls for 9-bit write masking per data group (DQa/DQPa to DQd/DQPd) |
| CLK | Clock Input | Rising-edge-triggered master clock; gated by CEN to suspend operation without deselection |
| CE1, CE2, CE3 | Chip Enable | Three-input synchronous decode (CE1/CE3 active low, CE2 active high) for bank selection and depth expansion |
| OE | Output Enable | Asynchronous control - overrides internal logic to three-state outputs, but masked during write data phase |
| ADV/LD | Address Counter Control | High = advance internal burst counter; Low = load new address - required LOW after deselect to initialize next access |
| MODE | Burst Order Strap | Static input - HIGH = interleaved burst; LOW = linear burst; must remain stable during operation |
| DQa–DQd, DQPa–DQPd | Data I/O | 36-bit bidirectional data bus + 4 parity bits; direction controlled by OE and internal state machine |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited true back-to-back read/write cycles with zero wait states - critical for packet buffering in switching fabric |
| Synchronous Self-Timed Writes | On-chip write timing eliminates external write pulse width constraints and simplifies controller design |
| Configurable Burst Order | Hardware-selectable linear or interleaved addressing via MODE pin - matches legacy ASIC or FPGA memory controller requirements |
| IEEE 1149.1 Boundary Scan | Full JTAG testability with TCK/TMS/TDI/TDO pins - supports automated PCB test and interconnect validation |
| Dual-Supply Operation | Independent 2.5 V core (VDD) and I/O (VDDQ) rails - allows interface voltage matching without core voltage compromise |
Applications
| Telecom Line Card Buffering | Network Switch Packet Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly to switch fabric ASICs via synchronous parallel bus. Use Value: 167 MHz pipelined operation ensures deterministic 6 ns cycle time, eliminating arbitration delays between ingress/egress traffic paths. | Use Scenario: Temporary storage of control-plane packets in carrier-grade routers during route table updates. IC Role / Device Role / Timing Role: Synchronous SRAM acting as a non-blocking, zero-wait-state scratchpad for microcode-executing network processors. Use Value: Byte-write capability (BWa–BWd) enables efficient partial-word updates without read-modify-write overhead, reducing bus occupancy. |
| Radar Signal Processing FIFO | Industrial PLC Real-Time Data Cache |
Use Scenario: Capturing high-rate ADC samples from phased-array radar receivers before FFT processing. IC Role / Device Role / Timing Role: Pipelined memory stage synchronizing ADC sampling clock to DSP processing clock domain. Use Value: 3.4 ns tCO and full registration ensure setup/hold compliance across clock domain boundaries with minimal skew management. | Use Scenario: Holding real-time I/O status and motion control parameters in modular automation controllers. IC Role / Device Role / Timing Role: Deterministic-access local memory for safety-critical cyclic executive tasks running on ARM Cortex-R cores. Use Value: ZZ sleep mode and stop-clock option reduce dynamic power during idle cycles while preserving data integrity - meeting IEC 61508 SIL-3 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L167PF | Same 512K × 36 organization and 167 MHz speed grade, but uses single 3.3 V supply and lacks JTAG | Targeted at cost-sensitive industrial control where boundary scan is not required | Select if 3.3 V system integration and lower BOM count outweigh need for IEEE 1149.1 testability |
| ISSI IS61WV102436B-167TQLI | Pin-compatible 512K × 36 device with identical 167 MHz rating, but no ZZ sleep mode or MODE-configurable burst order | Suitable for fixed-burst-order systems where interleaved/linear flexibility is unnecessary | Choose when simplified configuration and extended temperature range (–40°C to +85°C) are prioritized over programmable burst control |
Compared with IDT72V2115L167PF and IS61WV102436B-167TQLI, the CY7C1370KV25-167AXCT uniquely combines JTAG testability, dual-supply operation, hardware-selectable burst order, and low-power ZZ sleep - making it optimal for telecom and aerospace applications demanding traceability, signal integrity, and flexible memory controller integration.
Availability
CY7C1370KV25-167AXCT is available at Aetrix Electronics and suitable for telecom line card buffering, network switch packet memory, and radar signal processing FIFOs requiring stable component supply across multi-year production cycles.
Supply support for CY7C1370KV25-167AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The CY7C1370KV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT™ SRAMs in bandwidth-constrained systems requiring deterministic, zero-latency memory access for real-time data flow.
FAQ
What is the function of the MODE pin on CY7C1370KV25-167AXCT?
The MODE pin is a static strap input that selects burst address order: logic HIGH configures interleaved burst mode, while logic LOW selects linear burst mode. It must be held stable during operation and defaults to HIGH (interleaved) if left floating. This setting directly determines how the internal address counter increments during burst accesses and must match the memory controller's expected sequence.
Does CY7C1370KV25-167AXCT support power-down modes?
Yes - it supports two low-power states: "stop clock" mode (CEN = HIGH while CE1/CE2/CE3 remain asserted) and "ZZ" sleep mode (CE1 = HIGH, CE2 = LOW, CE3 = HIGH, and ZZ = LOW). In ZZ mode, core current drops to ≤100 µA while retaining data, and wake-up latency is one clock cycle after exit conditions are met.
How does the ADV/LD pin affect address loading behavior?
ADV/LD controls the internal address counter: when LOW at the rising edge of CLK (with CEN active), it loads a new address from A0–A18; when HIGH, it advances the counter for burst operations. After device deselection, ADV/LD must be driven LOW before the next access to ensure correct address initialization - failure to do so may cause invalid burst sequences or data corruption.
Can CY7C1370KV25-167AXCT be used with a 3.3 V interface?
No - it requires VDDQ = 2.5 V ±0.2 V for I/O signaling and is not 3.3 V tolerant. Driving address/control inputs above 2.625 V violates absolute maximum ratings. Interfacing with 3.3 V systems requires level-shifting circuitry or a compatible 2.5 V logic family (e.g., LVTTL or SSTL_2).
CY7C1370KV25-167AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1370KV25-167AXCT FAQ
1.How can I place an order for CY7C1370KV25-167AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1370KV25-167AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1370KV25-167AXCT reliable?
The price and inventory of CY7C1370KV25-167AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370KV25-167AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1370KV25-167AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1370KV25-167AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1370KV25-167AXCT?
CY7C1370KV25-167AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1370KV25-167AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1370KV25-167AXCT?
For technical support, including CY7C1370KV25-167AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370KV25-167AXCT requirements.
6.How does Aetrix verify that CY7C1370KV25-167AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1370KV25-167AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370KV25-167AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1370KV25-167AXCT?
All CY7C1370KV25-167AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370KV25-167AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1370KV25-167AXCT part is unused and in its original packaging.
Return procedure for CY7C1370KV25-167AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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