Infineon Technologies CY7C1370KV25-167BZC

Overview

CY7C1370KV25-167BZC from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with 3.4 ns clock-to-output delay, supports byte-write via four BW inputs, uses dual 2.5 V supplies (VDD core / VDDQ I/O), and delivers true back-to-back read/write with zero wait states.

For engineers reviewing the CY7C1370KV25-167BZC datasheet, CY7C1370KV25-167BZC pinout, CY7C1370KV25-167BZC application, or CY7C1370KV25-167BZC equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), synchronous self-timed write timing, JTAG boundary-scan support, and TQFP-100 package compatibility with ZBT™-legacy systems.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to the same edge. Internal burst logic supports linear or interleaved addressing based on the MODE strap pin.

The device integrates synchronous self-timed write circuitry, eliminating external write pulse timing constraints; byte write select signals (BWa–BWd) independently gate DQa–DQd and corresponding parity lines (DQPa–DQPd); OE is asynchronous but masked during write-data cycles to prevent bus contention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1370DV25-167BZI, the -167BZC offers lower cost and smaller thermal envelope for commercial environments; versus IDT72V2135L16PF, it provides hardware parity support and pin-for-pin ZBT™ compatibility at the expense of DDR bandwidth.

Availability

CY7C1370KV25-167BZC is available at Aetrix Electronics and suitable for telecom line card buffering, network processor interface memory, and industrial real-time Ethernet switch designs requiring stable component supply across multi-year production cycles.

Supply support for CY7C1370KV25-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable SoCs for industrial, automotive, and communications markets.

The CY7C1370KV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT™ SRAMs in systems demanding zero-wait-state burst throughput and deterministic timing under mixed read/write workloads.

FAQ

What is the function of the MODE pin, and can it be changed dynamically?

The MODE pin selects burst order: HIGH enables interleaved burst, LOW enables linear burst. It is a static strap pin - not sampled dynamically during operation. Changing MODE mid-operation violates timing and may cause address misalignment or data corruption. It must be set at power-up and held stable thereafter, with pull-up/pull-down resistors used for default configuration.

How does the device handle bus contention during write cycles?

During the data portion of a write sequence, the output drivers are automatically three-stated regardless of OE state - preventing bus contention. This behavior is hardwired in the NoBL™ logic and requires no external control. OE remains effective for reads and during idle/deselected states, but is overridden internally during write-data phases.

Is the ZZ (sleep) mode supported on this specific speed grade?

Yes, the CY7C1370KV25-167BZC supports ZZ sleep mode as specified in the datasheet. When ZZ is asserted LOW and CEN is HIGH, the device enters low-power sleep with typical ICC(sleep) ≤ 50 µA. All internal states are retained, and exit time is one clock cycle after ZZ deassertion - confirmed for both 167 MHz and 200 MHz speed grades.

Can CE2 be used as an active-LOW signal like CE1 and CE3?

No - CE2 is defined as active-HIGH per the datasheet pin definition and truth tables. Using it as active-LOW would violate functional operation: CE1 (active-LOW), CE2 (active-HIGH), and CE3 (active-LOW) together form a 3-signal decode enabling flexible memory banking. Inverting CE2 externally breaks the intended chip-select logic and may cause unintended device activation or deselection.