Infineon Technologies CY7C1370KV25-167BZI
- Part No.:
- CY7C1370KV25-167BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1370KV25-167BZI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1370KV25 from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 167 MHz with 3.4 ns clock-to-output delay, uses single 2.5 V core (VDD) and I/O (VDDQ) supplies, and supports byte write via four BW inputs for 36-bit data width.
For engineers reviewing the CY7C1370KV25 datasheet, CY7C1370KV25 pinout, CY7C1370KV25 application, or CY7C1370KV25 equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous self-timed write timing, JTAG boundary-scan support, and compatibility with ZBT™-based system designs requiring deterministic latency and full pipelining.
Technical Context
The device implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to CLK. Burst addressing is controlled by ADV/LD and MODE pins, enabling linear or interleaved sequences without external counters.
NoBL™ logic eliminates bus latency by internally managing output buffer timing-removing dependency on asynchronous OE-and enables true consecutive read/write transitions. Write operations use on-chip self-timed circuitry, ensuring consistent tWRL and tSDQZ timing across voltage/temperature, while three chip enables (CE1/CE2/CE3) and asynchronous OE support flexible bank expansion and output control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 organization) |
| Max Clock Frequency | 167 MHz - supports sustained burst transfers without wait states |
| Access Time (tCO) | 3.4 ns - guaranteed clock-to-output delay at 167 MHz operation |
| Supply Voltages | VDD = 2.5 V ±0.2 V (core); VDDQ = 2.5 V ±0.2 V (I/O) - dual-rail low-voltage interface |
| Burst Capability | Linear or interleaved - selected by MODE pin strap, no external logic required |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing in dense PCB layouts |
| Byte Write Control | Four independent BWa–BWd inputs - enable selective 9-bit writes within 36-bit word |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | Synchronous address bus latched on CLK rise; defines 512K-word location |
| BWa–BWd | Byte Write Select | Active-low synchronous controls for 9-bit subword writes (DQa/DQPa through DQd/DQPd) |
| CLK, CEN | Clock & Enable | CLK qualified by CEN: deasserting CEN extends previous cycle without deselecting device |
| CE1, CE2, CE3 | Chip Enable Group | Three-signal synchronous decode (CE1/CE3 active-low, CE2 active-high) for depth expansion |
| DQa–DQd, DQPa–DQPd | Data I/O with Parity | 36-bit bidirectional data + 4-bit parity; direction controlled by OE and internal write state |
| MODE | Burst Order Strap | Static input selecting linear (LOW) or interleaved (HIGH) burst sequence; no runtime change allowed |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Eliminates bus latency by synchronizing output enable internally-no external OE timing constraints |
| Zero Wait-State Pipelining | Enables unlimited consecutive read/write cycles with data valid every clock edge at 167 MHz |
| Synchronous Self-Timed Writes | On-chip write timing control ensures fixed tWRL and tSDQZ, removing board-level timing margin uncertainty |
| IEEE 1149.1 Boundary Scan | Full JTAG test access for interconnect verification in high-density routing environments |
| Flexible Burst Configuration | Hardware-mode selectable burst order (linear/interleaved) avoids firmware or register programming overhead |
Applications
| Telecom Line Cards | Network Packet Buffers |
|---|---|
Use Scenario: High-speed packet buffering in 10G Ethernet line cards where deterministic latency and burst throughput are critical. IC Role / Device Role / Timing Role: Primary data buffer between MAC and switch fabric, handling interleaved bursts of variable-length packets. Use Value: 3.4 ns tCO and zero-wait-state pipelining ensure sub-6 ns round-trip access for back-to-back packet reads/writes. | Use Scenario: Deep packet inspection engines requiring rapid context switching between multiple flow tables. IC Role / Device Role / Timing Role: Dual-port-accessible SRAM used as lookup table cache with simultaneous read-modify-write capability. Use Value: Byte-write select (BWa–BWd) enables atomic 9-bit updates to flow metadata without disturbing adjacent entries. |
| Avionics Data Recorders | Industrial Motion Controllers |
Use Scenario: Real-time flight data acquisition systems capturing sensor streams at >50 MB/s with error detection. IC Role / Device Role / Timing Role: Buffered memory with integrated parity (DQPa–DQPd) for ECC-capable logging under DO-254 compliance. Use Value: Synchronous parity I/O and JTAG boundary scan support hardware-level fault coverage validation. | Use Scenario: Multi-axis servo drive controllers synchronizing position, velocity, and torque updates across 8+ axes. IC Role / Device Role / Timing Role: Shared memory for real-time motion profile exchange between FPGA and ARM-based host processor. Use Value: 167 MHz clock rate and pipelined operation meet <100 ns jitter budget for deterministic axis coordination. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1370DV25-167BZI | Same 512K × 36 organization and NoBL™ architecture but uses 2.5 V only (no separate VDDQ rail) | Eliminates need for dual 2.5 V supplies; lower power in cost-sensitive industrial designs | Select when board power design lacks dedicated VDDQ regulation or thermal budget restricts VDDQ current draw |
| IDT72V2115L16PF | 16-Mbit (512K × 32) QDR-II+ SRAM with differential clocks and 200 MHz max frequency | Supports concurrent read/write ports; higher bandwidth but requires differential signaling and layout complexity | Select when system demands true dual-port behavior and can accommodate LVDS-level routing and termination |
Compared with CY7C1370DV25-167BZI, this part adds VDDQ separation for improved signal integrity on wide buses; versus IDT72V2115L16PF, it trades dual-port concurrency for simpler single-ended interface and deterministic NoBL™ latency.
Availability
CY7C1370KV25 is available at Aetrix Electronics and suitable for telecom infrastructure, avionics data recorders, industrial motion controllers, and network packet buffers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1370KV25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.
The CY7C1370KV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for systems demanding deterministic, zero-latency memory access in high-clock-rate synchronous bus architectures.
FAQ
What is the function of the MODE pin, and can it be changed during operation?
The MODE pin is a static strap that selects burst order: HIGH enables interleaved burst, LOW enables linear burst. It must be set before initialization and held stable during operation-changing it mid-operation causes undefined address sequencing and potential data corruption. The pin has an internal pull-up, so floating defaults to interleaved mode.
How does the device handle output enable (OE) during write cycles?
OE is masked during the data portion of write sequences, meaning outputs are automatically three-stated regardless of OE state. This prevents bus contention when DQ lines transition from input (write data) to output (subsequent read). OE remains effective only during read cycles and idle states, and its asynchronous nature allows fast output disable outside clock domain constraints.
Is the CY7C1370KV25 pin-compatible with ZBT™ SRAMs?
Yes-the CY7C1370KV25 is explicitly designed as pin-compatible and functionally equivalent to ZBT™ devices such as the IDT72V2113. Signal mapping (address, data, control), package footprint (100-pin TQFP), and AC timing parameters align per JEDEC ZBT specifications, enabling drop-in replacement in legacy ZBT-based designs without PCB redesign.
What is the role of ADV/LD in burst and single-access modes?
In burst mode, ADV/LD HIGH advances the internal address counter; LOW loads a new starting address. In single-access mode, ADV/LD must be LOW to latch the address on the next CLK rise. After deselection, ADV/LD must be driven LOW before re-enabling to ensure correct address capture-failure to do so may cause address aliasing or skipped locations.
CY7C1370KV25-167BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1370KV25-167BZI FAQ
1.How can I place an order for CY7C1370KV25-167BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1370KV25-167BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1370KV25-167BZI reliable?
The price and inventory of CY7C1370KV25-167BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370KV25-167BZI is usually 5 days.
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Once your CY7C1370KV25-167BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1370KV25-167BZI?
For technical support, including CY7C1370KV25-167BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370KV25-167BZI requirements.
6.How does Aetrix verify that CY7C1370KV25-167BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1370KV25-167BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370KV25-167BZI meets industry standards.
7.What is the process for return or replacement of CY7C1370KV25-167BZI?
All CY7C1370KV25-167BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370KV25-167BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1370KV25-167BZI part is unused and in its original packaging.
Return procedure for CY7C1370KV25-167BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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