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Infineon Technologies CY7C1370KV25-200AXC

Part No.:
CY7C1370KV25-200AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1370KV25-200AXC.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,247

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Product details

Overview

CY7C1370KV25 from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with zero wait states, features 2.5 V core (VDD) and I/O (VDDQ) supplies, and delivers 3.2 ns clock-to-output delay. Its byte-write capability, JTAG boundary scan, and interleaved/linear burst modes support deterministic latency in back-to-back read/write transitions.

For engineers reviewing the CY7C1370KV25 datasheet, CY7C1370KV25 pinout, CY7C1370KV25 application, or CY7C1370KV25 equivalent, key selection criteria include its 512K × 36 organization, TQFP-100 or FBGA-165 packaging, synchronous self-timed write control, ZZ sleep mode, and compatibility with ZBT™-based system designs requiring sustained 200-MHz bus throughput.

Technical Context

The CY7C1370KV25 implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. Its NoBL™ logic eliminates bus latency by enabling true back-to-back read/write cycles without wait states.

It supports synchronous burst reads/writes (linear or interleaved), byte-selectable writes via four BWx signals controlling DQa–DQd and corresponding parity lines DQPa–DQPd, and low-power management via CEN-gated clocking and ZZ sleep mode. The device integrates IEEE 1149.1 JTAG boundary scan for production testability.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 36 bits - provides 18-Mbit capacity with 36-bit wide data bus for high-bandwidth interfacing to 36-bit processors or ASICs.
Maximum Clock Frequency 200 MHz - enables sustained 200 million transfers per second with zero wait states in pipelined operation.
Clock-to-Output Delay (tCO) 3.2 ns - guarantees deterministic 3.2 ns maximum delay from CLK rise to valid DQ output, critical for timing-closure in high-speed systems.
Core & I/O Supply 2.5 V VDD / 2.5 V VDDQ - dual 2.5 V supplies simplify power delivery and ensure compatibility with 2.5 V logic families while minimizing noise coupling.
Package Options JEDEC-standard Pb-free 100-pin TQFP (14 × 20 mm) and 165-ball FBGA (13 × 15 mm) - supports both legacy PCB assembly and high-density routing.
Burst Mode Control MODE pin strapping - selects linear or interleaved burst order; floating defaults to interleaved, enabling flexible cache-line or DMA access patterns.
Power Management ZZ sleep mode + CEN clock gating - reduces active and standby current; CEN extends previous cycle without deselection, preserving pipeline state.

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (13 × 15 × 1.4 mm) packages. Pin functions are synchronous unless noted; OE is asynchronous.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Input Synchronous address bus; sampled on rising CLK edge to select one of 512K locations in 36-bit words.
BWa–BWd Byte Write Select Active-low synchronous controls for DQa/DQPa, DQb/DQPb, DQc/DQPc, DQd/DQPd - enables granular 8-bit writes within 36-bit word.
CLK Clock Input Rising-edge-triggered master clock; qualified by CEN - defines timing reference for all synchronous operations.
CEN Clock Enable Active-low synchronous gate for CLK - suspends internal clocking without deselecting device, extending previous cycle.
CE1, CE2, CE3 Chip Enable Synchronous 3-signal decode (CE1/CE3 active-low, CE2 active-high) - enables depth expansion and bank selection with precise timing control.
OE Output Enable Asynchronous active-low control - three-states DQ/DQP outputs during writes or deselect, preventing bus contention.
DQa–DQd, DQPa–DQPd Data I/O 36-bit data + 4-bit parity bidirectional bus - DQa–DQd carry data; DQPa–DQPd carry parity; direction controlled by OE and internal logic.
ADV/LD Address Counter Control Synchronous advance/load signal - HIGH advances internal burst counter; LOW loads new address from A[18:0] after deselect.
MODE Burst Order Select Strap pin - HIGH = interleaved burst (e.g., for cache); LOW = linear burst (e.g., for sequential DMA); must be stable during operation.
ZZ Deep Sleep Active-low input - places device in ultra-low-power sleep mode; retains data but disables clocks and I/O drivers.

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) Architecture Enables unlimited true back-to-back read/write operations with zero wait states - eliminates pipeline stalls in burst-intensive applications like packet buffering.
Fully Registered Pipelined Interface All inputs and outputs synchronized to CLK rising edge - ensures predictable setup/hold timing and simplifies FPGA/ASIC interface design.
Synchronous Self-Timed Writes On-chip write timing control eliminates external write pulse width constraints - removes need for precise WE assertion timing in controller logic.
IEEE 1149.1 JTAG Boundary Scan Integrated TAP controller with TDI/TDO/TCK/TMS pins - supports automated PCB test, interconnect verification, and in-system programming validation.
Byte-Write and Parity Support Four independent BWx signals control 8-bit segments across 36-bit data + 4-bit parity - enables error-resilient partial-word updates without read-modify-write overhead.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switches and routers.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer SRAM interfacing directly to packet processor ASICs via 36-bit parallel bus.

Use Value: 200-MHz zero-wait-state operation sustains full line-rate throughput; NoBL™ architecture prevents packet loss during rapid read/write alternation.

Use Scenario: Frame buffering and header processing in OC-192/STM-64 SONET/SDH line cards.

IC Role / Device Role / Timing Role: Synchronous burst memory for time-critical frame alignment and payload extraction logic.

Use Value: 3.2 ns tCO and pipelined addressing meet sub-5 ns timing budgets; ZZ sleep mode reduces power during idle intervals between frames.

Baseband Processing in Wireless Infrastructure High-Performance Test Equipment Memory

Use Scenario: Real-time symbol buffering and FFT window storage in LTE/5G baseband units.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM for cyclic data movement between DSP cores and RF front-end interfaces.

Use Value: Interleaved burst mode (via MODE pin) matches FFT memory access patterns; 2.5 V supplies reduce switching noise near sensitive analog sections.

Use Scenario: Pattern generation and response capture memory in high-speed digital logic analyzers and ATE systems.

IC Role / Device Role / Timing Role: High-fidelity waveform storage with precise clock-aligned sampling and playback.

Use Value: Fully registered interface ensures jitter-free data capture at 200 MHz; JTAG boundary scan validates interconnect integrity on dense test board layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L15PF 16-Mbit (512K × 32), 15 ns access, 3.3 V only, no parity, no JTAG Lacks parity and boundary scan; lower speed limits use in 200-MHz systems Select when 32-bit bus width suffices and JTAG/testability is not required.
ISSI IS61WV102436B 36-Mbit (1M × 36), 2.5 V, 250 MHz max, no ZZ mode, no MODE-controlled burst Higher density but lacks deep sleep and configurable burst order - less suitable for power-constrained or cache-like usage Select when higher capacity is primary need and burst flexibility/power management are secondary.

Compared with IDT72V2115L15PF and IS61WV102436B, the CY7C1370KV25 uniquely combines 512K × 36 organization, 200-MHz zero-wait performance, integrated parity, JTAG testability, and dual-mode burst control - making it optimal for latency-sensitive, testable, and power-aware telecom and networking designs.

Availability

CY7C1370KV25 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing in wireless infrastructure, and high-performance test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CY7C1370KV25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

The CY7C1370KV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace ZBT™ SRAMs in systems demanding deterministic, zero-latency burst memory access for real-time packet and signal processing.

FAQ

What is the function of the MODE pin on CY7C1370KV25?

The MODE pin selects burst address order: tied HIGH for interleaved burst (e.g., cache line access), pulled LOW for linear burst (e.g., sequential DMA). It is a strap pin - must be stable during operation and defaults to HIGH if left floating. This configuration determines how ADV/LD increments the internal address counter during burst sequences.

How does the ZZ pin differ from CEN in power management?

CEN gates the clock synchronously to extend the previous cycle without changing device state, while ZZ asserts deep sleep mode asynchronously - disabling clocks, I/O drivers, and internal logic to minimize standby current. ZZ retains memory contents but requires reinitialization of timing upon wake-up; CEN preserves full pipeline state for immediate resumption.

Can CY7C1370KV25 operate with only VDD powered and VDDQ unpowered?

No. Both VDD (2.5 V core) and VDDQ (2.5 V I/O) must be powered within specification before applying CLK or any input signals. Operating with VDDQ unpowered violates absolute maximum ratings and risks latch-up or I/O damage, as DQ/DQP pins are not 5-V tolerant and require VDDQ for proper driver biasing.

Is the CY7C1370KV25 pin-compatible with ZBT™ SRAMs?

Yes - it is explicitly designed as pin-compatible and functionally equivalent to ZBT™ SRAMs (e.g., IDT72V2115 series). Identical pinout, timing behavior, and control protocol allow drop-in replacement in existing ZBT-based designs, provided VDD/VDDQ voltage compliance and layout parasitics meet 2.5 V requirements.

CY7C1370KV25-200AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1370KV25-200AXC FAQ

1.How can I place an order for CY7C1370KV25-200AXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1370KV25-200AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1370KV25-200AXC reliable?

The price and inventory of CY7C1370KV25-200AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370KV25-200AXC is usually 5 days.

3.What payment methods are accepted for CY7C1370KV25-200AXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1370KV25-200AXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1370KV25-200AXC?

CY7C1370KV25-200AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1370KV25-200AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1370KV25-200AXC?

For technical support, including CY7C1370KV25-200AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370KV25-200AXC requirements.

6.How does Aetrix verify that CY7C1370KV25-200AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1370KV25-200AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370KV25-200AXC meets industry standards.

7.What is the process for return or replacement of CY7C1370KV25-200AXC?

All CY7C1370KV25-200AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370KV25-200AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1370KV25-200AXC part is unused and in its original packaging.

Return procedure for CY7C1370KV25-200AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1370KV25-200AXC Tags

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