Infineon Technologies CY7C1370KV25-200BZC

Overview

CY7C1370KV25-200BZC from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom ASIC/FPGA interfaces. It supports true back-to-back read/write operations at 200 MHz with zero wait states, features 3.2 ns clock-to-output delay, single 2.5 V core supply (VDD), and 2.5 V I/O supply (VDDQ), and operates in JEDEC-standard Pb-free 100-pin TQFP.

For engineers reviewing the CY7C1370KV25-200BZC datasheet, CY7C1370KV25-200BZC pinout, CY7C1370KV25-200BZC application, or CY7C1370KV25-200BZC equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), byte-write select granularity (BWa–BWd), synchronous self-timed write control, JTAG boundary-scan support, and ZZ sleep mode capability.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to the same edge. The internal NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without inter-cycle gaps.

It supports two burst modes-linear and interleaved-selected by the MODE strap pin, and integrates synchronous self-timed write circuitry that removes external write timing constraints. Byte write control (BWa–BWd) enables selective 9-bit writes per DQ group, while three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) provide flexible bank decoding for depth expansion.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102436B, CY7C1370KV25-200BZC delivers higher bandwidth (200 MHz vs. ≤167 MHz), lower voltage operation (2.5 V), and integrated test/sleep features-making it optimal for new designs prioritizing power efficiency, timing predictability, and production testability.

Availability

CY7C1370KV25-200BZC is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, high-speed FPGA co-processor memory, and telecom line card buffering requiring stable component supply across extended production lifecycles.

Supply support for CY7C1370KV25-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT SRAMs in bandwidth-constrained systems where deterministic zero-wait-state operation is mandatory.

FAQ

What is the function of the MODE pin on CY7C1370KV25-200BZC?

The MODE pin is a static configuration input that selects burst address order: pulled HIGH (or left floating) enables interleaved burst mode; pulled LOW selects linear burst mode. It must remain stable during device operation, as changing it mid-burst causes undefined address sequencing and potential data corruption. This pin directly maps to the internal burst counter logic and cannot be dynamically toggled.

How does the ZZ sleep mode affect data retention and wake-up timing?

In ZZ mode, core power current drops to ≤10 µA while retaining full memory contents. Wake-up is synchronous: the device exits ZZ on the first rising CLK edge after ZZ is deasserted HIGH, with tHZ = 15 ns maximum from ZZ deassertion to valid output enable. No refresh or reinitialization is required-data integrity is guaranteed across sleep/wake cycles per JEDEC JESD22-A102 reliability testing.

Can CY7C1370KV25-200BZC operate with only two chip enables asserted?

No. All three chip enables-CE1 (active-low), CE2 (active-high), and CE3 (active-low)-must be simultaneously asserted at the rising edge of CLK to initiate any access. If any one is inactive, the device enters deselected state, forcing outputs to high-impedance and blocking internal address/data transfers. This triple-enable scheme prevents partial selection errors in multi-SRAM bank configurations.

Is the ADV/LD pin required for single-cycle read operations?

Yes. For every single read access, ADV/LD must be driven LOW at the same rising CLK edge where CE1–CE3 are asserted and WE is HIGH. This loads the address from A0–A18 into the internal register. If ADV/LD is HIGH during that cycle, the device advances the internal burst counter instead-resulting in an incorrect address and invalid data output. ADV/LD state is sampled synchronously and is not optional for non-burst reads.