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Infineon Technologies CY7C1370KV33-167AXI

Part No.:
CY7C1370KV33-167AXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1370KV33-167AXI.pdf
Description:
IC SRAM 18MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:332

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Product details

Overview

CY7C1370KV33-167AXI from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture and on-chip ECC, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with 3.4 ns max access time, supports zero-wait-state back-to-back read/write cycles, and uses 3.3 V core / 2.5 V I/O supplies in a 100-pin TQFP package.

For engineers reviewing the CY7C1370KV33-167AXI datasheet, CY7C1370KV33-167AXI pinout, CY7C1370KV33-167AXI application, or CY7C1370KV33-167AXI equivalent, key selection criteria include burst mode compatibility (linear/interleaved), byte-write granularity (BWa–BWd), synchronous self-timed write control, JTAG boundary scan support, and ECC-enabled soft error resilience in mission-critical buffer applications.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and outputs are driven through output registers synchronized to CLK. The internal NoBL™ logic eliminates bus latency by enabling consecutive read/write operations without wait states.

It integrates on-chip ECC encoding/decoding for single-bit error correction and double-bit error detection, reducing soft error rate in radiation-sensitive environments. Burst addressing is controlled via ADV/LD and MODE pins, supporting both linear and interleaved orders, while ZZ enables asynchronous sleep mode to reduce standby power.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512K × 36 configuration)
Max Clock Frequency 167 MHz - enables sustained 167 MT/s throughput with zero wait states
Access Time 3.4 ns - defines minimum clock-to-output delay for timing budgeting
VDD / VDDQ 3.3 V core / 2.5 V I/O - separates core logic and interface voltage domains for noise isolation
ECC Support On-chip SEC-DED - corrects single-bit errors and detects double-bit errors in real time
Burst Mode Configurable linear or interleaved via MODE pin - matches CPU or ASIC bus protocol requirements
Package 100-pin TQFP (14 × 20 × 1.4 mm) - JEDEC-standard, Pb-free, surface-mount compatible

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-compliant, with exposed thermal pad (not electrically connected).

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Input Synchronous address bus; sampled on rising CLK edge to select one of 512K locations
BWa–BWd Byte Write Select Active-low synchronous controls for DQa/DQPa, DQb/DQPb, DQc/DQPc, DQd/DQPd - enables 8-bit granularity writes
CLK Clock Input Rising-edge-triggered master clock; qualified by CEN to gate clock recognition
CEN Clock Enable Active-low synchronous signal that suspends CLK sampling without deselecting device - extends previous cycle
CE1, CE3 Chip Enable Active-low synchronous enables; CE2 is active-high - three-signal bank decode for multi-SRAM systems
OE Output Enable Asynchronous, active-low; masked during write data phase to prevent bus contention
ZZ Sleep Control Asynchronous, active-high; places device in low-power sleep mode independent of clock state
MODE Burst Order Select Strap pin: HIGH = interleaved burst, LOW = linear burst - sets address increment pattern
DQa–DQd, DQPa–DQPd Data I/O 36-bit data + 4-bit parity bidirectional bus; direction controlled by OE and internal write/read state
TCK/TMS/TDI/TDO JTAG Interface IEEE 1149.1-compliant boundary scan signals for test and debug

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables unlimited true back-to-back read/write operations with no wait states - maximizes memory bandwidth utilization
Synchronous Self-Timed Writes Eliminates external write pulse timing constraints - internal logic determines write completion based on clock and control signals
Byte-Write Capability Four independent BW signals allow selective 8-bit writes within 36-bit word - reduces unnecessary data transfers and bus traffic
On-Chip ECC (SEC-DED) Corrects single-bit errors and detects double-bit errors in real time - improves system reliability without software overhead
Flexible Burst Ordering MODE pin selects linear or interleaved burst - aligns with x86, PowerPC, or custom ASIC memory controller requirements

Applications

Telecom Line Card Buffers Network Processor Data Caches

Use Scenario: High-speed packet buffering in OC-192/STM-64 line cards where deterministic latency and error resilience are critical.

IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as ingress/egress FIFO with ECC protection against cosmic-ray-induced bit flips.

Use Value: 167 MHz zero-wait-state operation sustains 6 Gbps sustained throughput; on-chip ECC eliminates need for external error-handling logic.

Use Scenario: L2 cache for multi-core network processors handling deep packet inspection and classification.

IC Role / Device Role / Timing Role: Pipelined SRAM providing low-latency, high-bandwidth data storage between processor cores and packet engines.

Use Value: Fully registered I/O and NoBL™ architecture ensure timing closure at 167 MHz; byte-write capability optimizes partial updates during metadata processing.

Industrial Control Backplane Memory Avionics Data Acquisition Buffers

Use Scenario: Real-time deterministic memory for PLC backplanes requiring guaranteed response times under electromagnetic interference.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as shared register file between motion controllers and I/O modules.

Use Value: Asynchronous ZZ sleep mode reduces idle power by >90%; JTAG boundary scan enables in-system testability per IEC 61508 SIL-3 requirements.

Use Scenario: Radiation-tolerant data capture buffer in flight data recorders and sensor fusion units operating in high-altitude environments.

IC Role / Device Role / Timing Role: ECC-protected SRAM storing time-stamped telemetry and health-monitoring data before flash transfer.

Use Value: On-chip SEC-DED reduces soft error rate by 10⁴× vs. standard SRAM; 3.3 V/2.5 V dual-rail supply improves noise immunity in mixed-signal avionics stacks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L16PF 16-Mbit (512K × 32), no on-chip ECC, 167 MHz, 3.3 V only (no VDDQ separation) Lacks parity/ECC; requires external error detection logic for safety-critical use Select when cost sensitivity outweighs ECC requirement and 32-bit bus width suffices
ISSI IS61WV102436BLL-167TQLI 36-Mbit (1M × 36), no ECC, 167 MHz, 3.3 V core/I/O, same 100-pin TQFP footprint Double density but no error correction; higher static current (175 mA vs. 163 mA) Select when capacity expansion is primary need and system-level ECC is implemented externally

Compared with IDT72V2115L16PF and IS61WV102436BLL-167TQLI, CY7C1370KV33-167AXI uniquely delivers integrated SEC-DED ECC in a 512K × 36 configuration at 167 MHz, enabling simpler, more reliable designs in telecom and avionics where soft error mitigation is mandatory.

Availability

CY7C1370KV33-167AXI is available at Aetrix Electronics and suitable for telecom line cards, network processor caches, industrial control backplanes, and avionics data acquisition systems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for CY7C1370KV33-167AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital solutions for industrial, automotive, and communications markets.

CY7C1370KV33-167AXI belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in infrastructure equipment where deterministic timing and data integrity are non-negotiable.

FAQ

What is the function of the MODE pin on CY7C1370KV33-167AXI?

The MODE pin is a strap input that configures burst address order: tied HIGH selects interleaved burst mode, pulled LOW selects linear burst mode. It must be held stable during operation; floating defaults to HIGH (interleaved). This setting directly determines how the internal address counter increments during burst reads/writes and must match the memory controller's expected sequence.

Does CY7C1370KV33-167AXI support 2.5 V-only I/O operation?

Yes - VDDQ is independently supplied and rated for 2.5 V ±0.2 V, while VDD is fixed at 3.3 V ±0.3 V. This dual-supply architecture isolates I/O signaling from core logic, reducing switching noise and enabling direct interfacing with 2.5 V ASICs or FPGAs without level shifters, provided VDDQ remains within specification during all operational modes including ZZ sleep.

How does the ZZ pin interact with clock enable (CEN) and chip enables?

ZZ is asynchronous and overrides all synchronous controls: asserting ZZ HIGH forces immediate entry into low-power sleep mode regardless of CEN, CE1/CE2/CE3, or CLK state. Upon deassertion (LOW), the device exits sleep and resumes normal operation after a tZZEX (100 ns typical) recovery delay - during which CEN and CE signals must be valid before next CLK edge.

Can CY7C1370KV33-167AXI perform partial writes without affecting adjacent bytes?

Yes - using BWa–BWd with WE active, any combination of the four 8-bit byte lanes (DQa/DQPa through DQd/DQPd) can be written independently. Unselected bytes retain their prior values; the synchronous self-timed write circuitry ensures atomicity per enabled byte group, eliminating read-modify-write cycles and preserving data coherency across partial updates.

CY7C1370KV33-167AXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.4 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1370KV33-167AXI FAQ

1.How can I place an order for CY7C1370KV33-167AXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1370KV33-167AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1370KV33-167AXI reliable?

The price and inventory of CY7C1370KV33-167AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370KV33-167AXI is usually 5 days.

3.What payment methods are accepted for CY7C1370KV33-167AXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1370KV33-167AXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1370KV33-167AXI?

CY7C1370KV33-167AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1370KV33-167AXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1370KV33-167AXI?

For technical support, including CY7C1370KV33-167AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370KV33-167AXI requirements.

6.How does Aetrix verify that CY7C1370KV33-167AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1370KV33-167AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370KV33-167AXI meets industry standards.

7.What is the process for return or replacement of CY7C1370KV33-167AXI?

All CY7C1370KV33-167AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370KV33-167AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1370KV33-167AXI part is unused and in its original packaging.

Return procedure for CY7C1370KV33-167AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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