Infineon Technologies CY7C1370KV33-167AXIT

Overview

CY7C1370KV33-167AXIT from Cypress Semiconductor is a 18-Mbit (512K × 36) pipelined synchronous SRAM with NoBL™ architecture and on-chip ECC, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with 3.4 ns maximum access time, supports zero-wait-state back-to-back read/write cycles, and uses 3.3 V core (VDD) and 3.3 V/2.5 V I/O (VDDQ) supplies.

For engineers reviewing the CY7C1370KV33-167AXIT datasheet, CY7C1370KV33-167AXIT pinout, CY7C1370KV33-167AXIT application, or CY7C1370KV33-167AXIT equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select mapping to DQ/DQP groups, synchronous self-timed write timing, JTAG boundary-scan support, and ECC-enabled soft error mitigation in mission-critical buffers.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven through output registers synchronized to CLK. The internal burst logic supports linear or interleaved addressing based on the MODE strap pin state.

It integrates on-chip ECC encoding/decoding for single-bit error correction and double-bit error detection, reducing soft error rate in radiation-sensitive environments. Synchronous self-timed writes eliminate external write pulse width constraints, while CEN enables clock gating without chip deselection.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pipelined SRAM applications.

Compared with IDT72V285L15PF and IS61WV102436B, CY7C1370KV33-167AXIT uniquely delivers ECC-protected 167 MT/s operation in pin-compatible TQFP packaging - making it the sole option for drop-in replacement in existing ZBT-based designs requiring SER mitigation.

Availability

CY7C1370KV33-167AXIT is available at Aetrix Electronics and suitable for packet buffering, switch fabric lookup tables, and baseband processing caches requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for CY7C1370KV33-167AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1370KV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, ECC-enhanced memory subsystems in carrier-grade networking and defense electronics where deterministic timing and data integrity are non-negotiable.

FAQ

What is the function of the MODE pin on CY7C1370KV33-167AXIT?

The MODE pin is a static configuration strap that determines burst address ordering: pulled HIGH (or left floating) selects interleaved burst mode, while pulled LOW selects linear burst mode. It must be held stable during device operation and is sampled only at power-up or reset. This pin directly maps to JEDEC-standard burst behavior and cannot be changed dynamically during runtime.

Does CY7C1370KV33-167AXIT support 2.5 V I/O operation?

Yes - the VDDQ supply accepts either 3.3 V or 2.5 V, enabling direct interface with 2.5 V logic families without level shifters. When VDDQ = 2.5 V, AC timing parameters such as tAC and tOH are adjusted per datasheet specifications, and DC characteristics like VOH/VOL comply with 2.5 V LVTTL levels. Core VDD remains fixed at 3.3 V.

How does the ZZ pin affect power consumption and data retention?

Asserting ZZ HIGH places the device in asynchronous sleep mode, disabling internal clocks and I/O drivers while retaining all stored data in the SRAM array. Typical standby current drops to <50 µA. Data retention is guaranteed over the full industrial temperature range (–40°C to +85°C) as long as VDD and VDDQ remain within specification - no refresh or external intervention is required.

Can CY7C1370KV33-167AXIT be used as a direct replacement for ZBT SRAMs?

Yes - it is pin-compatible and functionally equivalent to ZBT devices (e.g., IDT72V285), supporting identical control protocols, burst orders, and timing conventions. Key differentiators include integrated ECC, NoBL™ zero-latency architecture, and dual-voltage VDDQ. No PCB or firmware changes are needed beyond verifying VDDQ compatibility and enabling ECC handling in the memory controller.