Infineon Technologies CY7C1370KV33-200AXC
- Part No.:
- CY7C1370KV33-200AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1370KV33-200AXC.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1370KV33-200AXC from Cypress Semiconductor is a 18-Mbit (512K × 36) pipelined synchronous SRAM with NoBL™ architecture and integrated ECC, designed for high-throughput memory subsystems in network switches, telecom line cards, and packet buffering applications. It operates at 200 MHz with zero wait states, supports 3.3 V core and 3.3 V/2.5 V I/O supplies, and delivers 3.0 ns clock-to-output access time.
For engineers reviewing the CY7C1370KV33-200AXC datasheet, CY7C1370KV33-200AXC pinout, CY7C1370KV33-200AXC application, or CY7C1370KV33-200AXC equivalent, key selection criteria include burst mode configuration (linear/interleaved), byte-write granularity across four 9-bit data groups, synchronous self-timed write timing, JTAG boundary-scan support, and ECC-enabled soft error mitigation in radiation-sensitive environments.
Technical Context
This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven through output registers synchronized to the same edge. The internal NoBL™ logic eliminates bus latency by enabling true back-to-back read/write cycles without wait states.
Burst addressing is controlled by ADV/LD and MODE pins, supporting both linear and interleaved orders; byte write enables (BWa–BWd) independently gate four 9-bit data/parity groups (DQa/DQPa through DQd/DQPd); ECC encoding/decoding occurs on-chip with dedicated parity I/O lines and automatic correction of single-bit errors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 organization), enabling 36-bit wide data paths for high-bandwidth packet processing. |
| Max Clock Frequency | 200 MHz - supports sustained 200 MT/s throughput with no cycle penalties between consecutive accesses. |
| Access Time | 3.0 ns - defines minimum clock-to-output delay for timing-critical burst reads in switch fabric interfaces. |
| VDD / VDDQ | 3.3 V core / 3.3 V or 2.5 V I/O - allows interoperability with both LVTTL and SSTL-2 signaling domains. |
| ECC Support | On-die SEC-DED (Single Error Correction, Double Error Detection) - reduces soft error rate in terrestrial and aerospace systems without external logic. |
| Burst Capability | Linear or interleaved burst order - selectable via MODE pin; matches legacy ZBT™ protocol requirements for seamless migration. |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free - compatible with standard SMT reflow profiles and board-level test fixtures. |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | 19-bit synchronous address bus sampled on CLK rising edge; selects one of 524,288 locations in 512K × 36 array. |
| BWa–BWd | Byte Write Select | Four independent active-low controls for 9-bit data/parity groups (DQa/DQPa to DQd/DQPd); enables partial writes without read-modify-write. |
| CLK, CEN | Clock & Enable | CLK qualified by CEN (active LOW); CEN suspends clock recognition while preserving internal state - critical for power-gated operation. |
| DQa–DQd / DQPa–DQPd | Data I/O & Parity I/O | 36-bit bidirectional data + 4-bit parity bus; each DQX pair shares BWx control and supports synchronous tristate during write data phase. |
| CE1, CE2, CE3 | Chip Enable Group | Three-level synchronous chip select (CE1/CE3 active LOW, CE2 active HIGH); enables hierarchical bank decoding in multi-SRAM systems. |
| OE | Asynchronous Output Enable | Active-LOW OE overrides synchronous control to force I/O tristate - used for bus arbitration and hot-swap isolation. |
| ZZ | Asynchronous Sleep | Active-HIGH ZZ input places device in low-power sleep mode (< 50 µA ICC), retaining data without external refresh. |
| MODE | Burst Order Strap | Static input selecting linear (MODE = LOW) or interleaved (MODE = HIGH) burst sequence - must be stable during operation. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited back-to-back read/write operations with zero wait states - eliminates pipeline stalls in high-speed packet forwarding engines. |
| Synchronous Self-Timed Writes | Internal write timing control ensures deterministic setup/hold margins regardless of clock skew - simplifies PCB layout and timing closure. |
| IEEE 1149.1 JTAG Boundary Scan | Full scan chain support (TCK/TMS/TDI/TDO) enables in-system testability and interconnect verification without physical probe access. |
| Flexible I/O Voltage | VDDQ configurable for 3.3 V or 2.5 V operation - permits direct interface to FPGA I/O banks or ASIC SerDes PHYs with mixed-voltage signaling. |
| ZZ Sleep Mode | Reduces standby current to < 50 µA while maintaining full data retention - extends uptime in battery-backed or thermally constrained modules. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet switch ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to MAC and traffic manager logic via 36-bit parallel bus. Use Value: 200 MHz zero-wait-state operation sustains 7.2 GB/s aggregate bandwidth; ECC prevents silent corruption in multi-million-packet-per-second flows. |
Use Scenario: Frame buffering in OC-192 SONET/SDH line cards requiring deterministic access timing and long-term data integrity. IC Role / Device Role / Timing Role: Dual-port-capable SRAM acting as ping-pong buffer for ATM cell assembly/disassembly with burst-mode DMA transfers. Use Value: Interleaved burst mode aligns with SONET payload structure; ZZ sleep mode cuts power during idle intervals without data loss. |
| FPGA Co-Processor Cache | Radar Signal Processing Buffer |
|
Use Scenario: Off-chip instruction/data cache for Xilinx Virtex or Intel Stratix FPGAs running real-time control firmware. IC Role / Device Role / Timing Role: Pipelined memory extension providing low-jitter, register-aligned read/write responses synchronized to FPGA clock domain. Use Value: Fully registered I/O eliminates external timing constraints; MODE pin allows runtime burst-order adaptation to algorithmic access patterns. |
Use Scenario: Intermediate storage for digitized RF samples in airborne phased-array radar front-ends exposed to neutron flux. IC Role / Device Role / Timing Role: Radiation-hardened-by-design buffer holding ADC output streams prior to FFT computation in DSP clusters. Use Value: On-chip SEC-DED ECC reduces SER by >10⁴× vs. standard SRAM; 3.0 ns access enables real-time sample-to-result latency under 500 ns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PFI | 10 ns access at 100 MHz; no on-die ECC; 2.5 V only I/O; 165-ball FBGA only | Lacks ECC and 200 MHz performance; suited for cost-sensitive, non-radiation environments | Select when system-level ECC is implemented externally and bandwidth demand ≤ 3.6 GB/s. |
| ISSI IS61WV102436BLL-150TQLI | 150 MHz max; 3.5 ns access; no JTAG; no ZZ sleep; supports 1M × 36 but not 512K × 36 | Lower speed grade; no boundary scan or deep-sleep mode; limited testability in dense PCB layouts | Choose for simpler designs where JTAG test coverage and ultra-low standby power are not required. |
Compared with IDT72V2115L10PFI and IS61WV102436BLL-150TQLI, CY7C1370KV33-200AXC uniquely combines 200 MHz operation, on-die SEC-DED ECC, JTAG testability, and ZZ sleep - making it optimal for mission-critical infrastructure where reliability, bandwidth, and debuggability are co-constrained.
Availability
CY7C1370KV33-200AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA co-processor cache, and radar signal processing applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1370KV33-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.
CY7C1370KV33-200AXC belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-reliability memory subsystems in carrier-grade networking and defense electronics.
FAQ
What is the function of the MODE pin on CY7C1370KV33-200AXC?
The MODE pin is a static strap input that selects burst addressing order: logic HIGH configures interleaved burst mode, while logic LOW selects linear burst mode. It must remain stable during device operation and defaults to HIGH if left floating. This pin directly maps to the internal burst counter logic and determines how consecutive addresses increment during burst transfers.
Does CY7C1370KV33-200AXC require external ECC circuitry?
No. CY7C1370KV33-200AXC integrates full SEC-DED (Single Error Correction, Double Error Detection) ECC logic on-die, including dedicated parity I/O pins (DQPa–DQPd) and automatic encoding/decoding. External ECC components are unnecessary, reducing BOM count and PCB area while guaranteeing bit-level error resilience per access.
Can CY7C1370KV33-200AXC operate with 2.5 V I/O voltage while using 3.3 V core supply?
Yes. The device supports independent VDD (3.3 V) and VDDQ (2.5 V or 3.3 V) supplies. When VDDQ = 2.5 V, all I/Os meet SSTL-2 specifications, enabling direct connection to 2.5 V FPGA I/O banks or ASIC interfaces without level shifters - verified in the AC switching characteristics table of the official datasheet.
How does the ZZ pin interact with clock enable (CEN) during low-power operation?
ZZ (asynchronous sleep) and CEN (synchronous clock enable) operate independently: ZZ forces deep sleep with sub-50 µA ICC and full data retention, disabling all internal clocks and I/O drivers; CEN only gates CLK recognition while preserving register state and allowing fast wake-up. Using ZZ avoids clock tree power loss; using CEN enables cycle-accurate pause/resume for deterministic timing control.
CY7C1370KV33-200AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1370KV33-200AXC FAQ
1.How can I place an order for CY7C1370KV33-200AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1370KV33-200AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1370KV33-200AXC reliable?
The price and inventory of CY7C1370KV33-200AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370KV33-200AXC is usually 5 days.
3.What payment methods are accepted for CY7C1370KV33-200AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1370KV33-200AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1370KV33-200AXC?
CY7C1370KV33-200AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1370KV33-200AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1370KV33-200AXC?
For technical support, including CY7C1370KV33-200AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370KV33-200AXC requirements.
6.How does Aetrix verify that CY7C1370KV33-200AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1370KV33-200AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370KV33-200AXC meets industry standards.
7.What is the process for return or replacement of CY7C1370KV33-200AXC?
All CY7C1370KV33-200AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370KV33-200AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1370KV33-200AXC part is unused and in its original packaging.
Return procedure for CY7C1370KV33-200AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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