Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1370KV33-200AXCT

Part No.:
CY7C1370KV33-200AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1370KV33-200AXCT.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,945

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1370KV33-200AXCT from Cypress Semiconductor is a 18-Mbit (512K × 36) pipelined synchronous SRAM with NoBL™ architecture, ECC support, and 3.3 V core/2.5 V I/O operation. It delivers zero-wait-state 200 MHz bus performance (3.0 ns clock-to-output), fully registered I/O, byte-write capability, and on-chip ECC for soft error mitigation - deployed in high-throughput network packet buffers and telecom line cards.

For engineers reviewing the CY7C1370KV33-200AXCT datasheet, CY7C1370KV33-200AXCT pinout, CY7C1370KV33-200AXCT application, or CY7C1370KV33-200AXCT equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), synchronous self-timed write timing, JTAG boundary-scan compliance, and TQFP-100 package thermal and routing constraints.

Technical Context

This SRAM implements a fully synchronous, pipelined read/write interface with all inputs and outputs registered to the rising edge of CLK, and internal self-timed output buffer control eliminating asynchronous OE dependency. The device supports linear or interleaved burst orders selected by the MODE strap pin and includes IEEE 1149.1-compliant JTAG boundary scan for system-level testability.

It integrates on-chip ECC encoding/decoding logic to detect and correct single-bit errors, reducing soft error rate in radiation-sensitive environments. Write operations are controlled by four byte-write enables (BWa–BWd), WE, and CEN, with synchronous tri-state control of DQ/DQP lines during write data cycles to prevent bus contention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512K × 36 organization)
Max Clock Frequency 200 MHz - enables zero-wait-state back-to-back read/write at 5 ns cycle time
Access Time 3.0 ns - defines minimum clock-to-output delay for timing-critical burst reads
VDD / VDDQ 3.3 V core / 2.5 V I/O - separates power domains for noise isolation and signal integrity
ECC Support On-chip encoder/decoder - corrects single-bit errors per 36-bit word, critical for telecom reliability
Burst Capability Linear or interleaved - configured by MODE pin; determines address increment pattern during burst sequences
Package 100-pin TQFP (14 × 20 × 1.4 mm) - JEDEC-standard, Pb-free, surface-mount compatible

Pinout & Package

Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm), JEDEC-standard Pb-free, with exposed thermal pad (not electrically connected).

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Input Synchronous address bus sampled on CLK rising edge; selects one of 512K locations
BWa–BWd Byte Write Select Active-low synchronous controls for DQa/DQPa through DQd/DQPd; enables partial-word writes
CLK, CEN Clock & Enable CLK qualified by active-low CEN; deasserting CEN extends previous cycle without deselection
DQa–DQd, DQPa–DQPd Data I/O & Parity I/O 36-bit bidirectional data + 4-bit parity; direction controlled by OE and internal write state
CE1, CE2, CE3 Chip Enable Three synchronous enables (active LOW/HIGH/LOW) for multi-bank memory mapping and bank isolation
MODE Burst Order Strap Static input setting burst sequence: HIGH = interleaved, LOW = linear; must be stable during operation
ZZ Asynchronous Sleep Active-HIGH entry into low-power sleep mode; retains data while reducing standby current

Key Features

Feature Design Value
NoBL™ Architecture Enables true back-to-back read/write with no bus latency - eliminates pipeline stalls in burst-intensive systems
Synchronous Self-Timed Writes Removes external write pulse timing constraints; internal logic guarantees setup/hold compliance across voltage/temp
On-Chip ECC Single-bit error correction per 36-bit word reduces SER in telecom infrastructure exposed to cosmic radiation
IEEE 1149.1 JTAG Full boundary-scan support enables board-level interconnect testing without physical probe access
Flexible I/O Voltage VDDQ = 2.5 V allows direct interfacing with 2.5 V logic families while maintaining 3.3 V core stability

Applications

Network Packet Buffer Telecom Line Card

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as dual-port FIFO buffer between ingress/egress MACs and switching fabric.

Use Value: 200 MHz zero-wait-state operation ensures deterministic 5 ns read/write turnaround, enabling full-line-rate packet processing at 10 Gbps.

Use Scenario: Buffering TDM voice channels and control plane messages in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: ECC-protected memory for real-time signaling and payload storage where bit errors could cause call drops or misrouting.

Use Value: On-chip ECC reduces uncorrectable error rate by >99% vs. non-ECC SRAM, meeting Telcordia GR-474 reliability requirements.

Radar Signal Processing Industrial PLC Motion Control

Use Scenario: Capturing and buffering high-speed ADC samples from phased-array radar receivers before FFT processing.

IC Role / Device Role / Timing Role: Burst-mode SRAM serving as ping-pong buffer between ADC interface and DSP subsystem, synchronized to system clock domain.

Use Value: Interleaved burst mode (via MODE pin) matches radar chirp timing patterns, minimizing address overhead and maximizing throughput.

Use Scenario: Storing motion trajectory tables and real-time I/O status in CNC controllers requiring deterministic microsecond response.

IC Role / Device Role / Timing Role: Deterministic-access memory for servo loop look-up tables and encoder position history, accessed under hard real-time deadlines.

Use Value: Fully registered I/O and 3.0 ns access time guarantee sub-50 ns read latency, enabling 20 kHz servo update rates with jitter < 100 ns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L10PFI 10 ns access, 100 MHz max, 512K × 36, no ECC, LVDS-compatible I/O Lacks on-chip ECC and NoBL architecture; requires external timing control for burst sequencing Preferred where LVDS signaling or lower power at reduced speed suffices, but not for ECC-critical telecom use
ISSI IS61WV102436BLL-150TQLI 150 MHz, 3.3 V only (no VDDQ separation), no JTAG, no MODE-selectable burst order Fixed linear burst only; no boundary-scan test support; higher VDDQ noise coupling risk in mixed-signal systems Cost-optimized for industrial control where JTAG and ECC are non-mandatory, but not suitable for telecom certification paths

Compared with IDT72V2115L10PFI and IS61WV102436BLL-150TQLI, CY7C1370KV33-200AXCT uniquely combines 200 MHz zero-wait-state operation, configurable burst order, on-chip ECC, and JTAG - making it the only option meeting simultaneous requirements for telecom packet buffering, radiation tolerance, and production testability.

Availability

CY7C1370KV33-200AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card design, radar signal capture, and industrial motion control applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1370KV33-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and communications markets.

CY7C1370KV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-throughput data buffering in telecom infrastructure and real-time embedded systems demanding ECC and JTAG testability.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin is a static strap input that selects burst address order: HIGH enables interleaved burst, LOW enables linear burst. It must be held stable before initialization and remain unchanged during operation. Floating defaults to HIGH (interleaved). This pin is not sampled dynamically - its state sets the burst counter behavior at power-up and cannot be altered mid-operation without reset.

Does CY7C1370KV33-200AXCT support true dual-port operation?

No - it is a synchronous single-port SRAM with pipelined read/write capability. While it supports back-to-back reads and writes with zero wait states, it lacks independent read and write ports. Data contention is prevented by synchronous tri-state control of DQ/DQP lines during write cycles, not by physical port separation.

How does the ZZ pin interact with the CEN pin during low-power operation?

ZZ is asynchronous and forces immediate entry into sleep mode, halting internal clocks and reducing ICC to ~50 µA. CEN is synchronous and only gates CLK recognition - the device remains selected and retains state. Using ZZ provides deeper power savings; using CEN alone maintains readiness for immediate wake-up but draws higher standby current (~12 mA).

Can the ECC functionality be disabled for non-critical applications?

No - ECC is hardwired and always active on CY7C1370KV33-200AXCT. All 36-bit data words include 4 parity bits (DQPa–DQPd), and the encoder/decoder operates transparently. There is no register or pin control to bypass ECC; attempting to ignore parity bits violates the device's functional specification and risks undetected multi-bit errors.

CY7C1370KV33-200AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1370KV33-200AXCT FAQ

1.How can I place an order for CY7C1370KV33-200AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1370KV33-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1370KV33-200AXCT reliable?

The price and inventory of CY7C1370KV33-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1370KV33-200AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1370KV33-200AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1370KV33-200AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1370KV33-200AXCT?

CY7C1370KV33-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1370KV33-200AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1370KV33-200AXCT?

For technical support, including CY7C1370KV33-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1370KV33-200AXCT requirements.

6.How does Aetrix verify that CY7C1370KV33-200AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1370KV33-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1370KV33-200AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1370KV33-200AXCT?

All CY7C1370KV33-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1370KV33-200AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1370KV33-200AXCT part is unused and in its original packaging.

Return procedure for CY7C1370KV33-200AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1370KV33-200AXCT Tags

  • CY7C1370KV33-200AXCT
  • CY7C1370KV33-200AXCT PDF
  • CY7C1370KV33-200AXCT Datasheet
  • CY7C1370KV33-200AXCT Specifications
  • CY7C1370KV33-200AXCT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1370KV33-200AXCT
  • Buy CY7C1370KV33-200AXCT
  • CY7C1370KV33-200AXCT Price
  • CY7C1370KV33-200AXCT Distributor
  • CY7C1370KV33-200AXCT Supplier
  • CY7C1370KV33-200AXCT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER