Infineon Technologies CY7C1370KV33-200BZXI

Overview

CY7C1370KV33-200BZXI from Cypress Semiconductor is a 18-Mbit (512K × 36) pipelined synchronous SRAM with NoBL™ architecture and on-chip ECC, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 200 MHz with zero wait states, supports 3.3 V core and 3.3 V/2.5 V I/O supplies, and delivers 3.0 ns clock-to-output access time.

For engineers reviewing the CY7C1370KV33-200BZXI datasheet, CY7C1370KV33-200BZXI pinout, CY7C1370KV33-200BZXI application, or CY7C1370KV33-200BZXI equivalent, this device is selected for back-to-back read/write burst operations in packet buffering, cache coherency interfaces, and FPGA-attached memory where deterministic latency and SER mitigation are critical.

Technical Context

The CY7C1370KV33-200BZXI implements fully registered synchronous interface logic: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. Its NoBL™ architecture eliminates bus latency by enabling true back-to-back read/write cycles without wait states.

Burst operation supports both linear and interleaved orders via MODE pin configuration; byte write control uses four independent BWa–BWd signals active-low, each governing one 9-bit data/parity group (DQa/DQPa through DQd/DQPd). On-chip ECC encoder/decoder corrects single-bit errors and detects double-bit errors in real time.

Key Specifications

Pinout & Package

This device is packaged in a JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm), with 36 data bits (DQa–DQd), 4 parity bits (DQPa–DQPd), 18 address lines (A0–A17), and dedicated synchronous control pins including CEN, WE, ADV/LD, CE1–CE3, and OE.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pipelined SRAM applications.

Compared with IDT72V2115L10PFI and IS61WV102436BLL-150TQLI, the CY7C1370KV33-200BZXI provides 2× higher bandwidth, integrated ECC, and tighter timing - making it the sole option for 200 MHz deterministic systems requiring radiation-hardened data integrity.

Availability

CY7C1370KV33-200BZXI is available at Aetrix Electronics and suitable for packet buffering, FPGA co-processor memory, baseband signal processing, and industrial motion control systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1370KV33-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in infrastructure equipment where deterministic timing and data reliability are non-negotiable.

FAQ

What is the function of the MODE pin on CY7C1370KV33-200BZXI?

The MODE pin is a strap input that selects burst addressing order: logic HIGH configures interleaved burst mode, while logic LOW selects linear burst mode. It must be held static during operation and defaults to HIGH if left floating. This setting determines how the internal address counter increments during burst reads/writes and must match the host controller's expected pattern.

Does CY7C1370KV33-200BZXI require external termination resistors on DQ lines?

No external series or parallel termination is required on DQ lines. The device integrates programmable output drivers with impedance control calibrated to 50 Ω ±10% into 50 Ω loads. Layout guidelines recommend controlled-impedance routing and proper VDDQ/VSS decoupling, but no discrete termination components are specified in the design rules.

How does the ZZ sleep mode interact with ongoing burst operations?

Asserting ZZ HIGH immediately halts clock recognition and places outputs in high-impedance state, but preserves all stored data. Any burst sequence in progress is terminated at the current cycle; no partial writes occur. The device exits sleep synchronously on ZZ deassertion and first valid CLK edge, resuming operation without reset or initialization delay.

Can CY7C1370KV33-200BZXI operate with VDDQ = 2.5 V while VDD remains at 3.3 V?

Yes - VDDQ may be independently supplied at 2.5 V while VDD is at 3.3 V. This allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters. All timing parameters in the 200 MHz speed bin are characterized and guaranteed for this mixed-supply condition, including tAC, tOH, and setup/hold margins relative to CLK.