Infineon Technologies CY7C1370KV33-250AXC

Overview

CY7C1370KV33-250AXC from Cypress Semiconductor is a 18-Mbit (512K × 36) pipelined synchronous SRAM with NoBL™ architecture, ECC support, and 250 MHz operation. It delivers zero-wait-state back-to-back read/write throughput, 2.5 ns clock-to-output delay, and operates on 3.3 V core / 3.3 V or 2.5 V I/O supplies. Used in high-speed networking line cards and packet buffering subsystems requiring deterministic latency and soft-error resilience.

For engineers reviewing the CY7C1370KV33-250AXC datasheet, CY7C1370KV33-250AXC pinout, CY7C1370KV33-250AXC application, or CY7C1370KV33-250AXC equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write granularity (4 × 9-bit groups), JTAG boundary-scan compliance, ZZ sleep mode timing, and ECC correction capability for SER reduction in radiation-prone environments.

Technical Context

This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. Internal self-timed output buffer control eliminates asynchronous OE timing constraints, while synchronous self-timed write circuitry ensures deterministic write completion independent of clock skew.

The device supports two memory configurations - 512K × 36 (CY7C1370KV33) and 1M × 18 (CY7C1372KV33) - selectable via MODE pin. Burst logic enables linear or interleaved addressing, and on-chip ECC encoder/decoder corrects single-bit errors and detects double-bit errors in real time during read cycles.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, with exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102432BLL-15BLI, CY7C1370KV33-250AXC uniquely combines 250 MHz operation, on-die ECC, and TQFP packaging - making it the only option meeting simultaneous requirements for radiation-resilient, low-latency, and surface-mount-compatible high-speed buffering.

Availability

CY7C1370KV33-250AXC is available at Aetrix Electronics and suitable for telecom infrastructure, avionics data recorders, and industrial test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CY7C1370KV33-250AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

This device belongs to Cypress's NoBL™ SRAM product line - engineered specifically for zero-latency, burst-capable buffering in network processors, FPGAs, and real-time control systems where deterministic timing and data integrity are mandatory.

FAQ

What is the function of the MODE pin, and how does it affect burst behavior?

The MODE pin is a static strap that selects burst address order: HIGH enables interleaved burst (e.g., 0, 2, 4, 6… then 1, 3, 5, 7…), LOW enables linear burst (0, 1, 2, 3…). It must remain stable during operation; floating defaults to HIGH. This setting directly determines how ADV/LD increments the internal counter during burst reads/writes and affects compatibility with memory controllers expecting specific address sequencing.

How does the ZZ sleep mode interact with data retention and wake-up timing?

When ZZ is asserted HIGH, the device enters low-power sleep mode with ICC reduced to ≤ 50 µA while retaining all stored data. Wake-up occurs synchronously on the next rising CLK edge after ZZ returns LOW, with full functionality restored within one clock cycle. No initialization or refresh is required, and all internal registers retain their state across sleep/wake transitions.

Can the CY7C1370KV33-250AXC operate with 2.5 V I/O while maintaining 3.3 V core voltage?

Yes - VDDQ may be independently supplied at 2.5 V while VDD remains at 3.3 V. This is explicitly supported per datasheet AC/DC specifications and allows direct interfacing with 2.5 V FPGA I/O banks. All timing parameters (including tAC, tOH, tSU, tH) are guaranteed under this mixed-voltage condition, and no level-shifting circuitry is needed.

What happens to the DQ bus during a write cycle when OE is asserted LOW?

During the data portion of a write sequence, the DQ bus is automatically forced into high-impedance regardless of OE state - preventing bus contention between driving source and SRAM output drivers. This behavior is hardwired in the output register control logic and requires no external timing coordination. OE only governs output enable outside of write data windows and during read cycles.