Infineon Technologies CY7C1370KVE33-167AXI

Overview

CY7C1370KVE33-167AXI from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, ECC support, and 167 MHz maximum bus operation. It delivers zero-wait-state back-to-back read/write throughput in high-bandwidth memory subsystems, features 3.3 V core / 2.5 V I/O power supplies, and implements synchronous self-timed writes with byte-level write control via four BW pins.

For engineers reviewing the CY7C1370KVE33-167AXI datasheet, CY7C1370KVE33-167AXI pinout, CY7C1370KVE33-167AXI application, or CY7C1370KVE33-167AXI equivalent, key selection criteria include its 100-pin TQFP package, 3.4 ns max access time at 167 MHz, on-chip ECC for SER reduction, burst mode flexibility (linear/interleaved), and JTAG boundary-scan compliance for system testability.

Technical Context

This SRAM uses fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers clocked by the same edge. Its NoBL™ logic eliminates bus latency by enabling true consecutive read/write cycles without wait states, supported by internal self-timed output buffer control that removes dependency on asynchronous OE timing.

The device integrates on-chip ECC encoding/decoding for single-bit error correction and double-bit error detection, reducing soft error rate in radiation-sensitive environments. Burst addressing is controlled by ADV/LD and MODE pins, selecting between linear or interleaved sequences, while CEN enables clock gating without chip deselection.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with AS7C331025B-167JCIN and IS61WV102432BLL-167TQLI, the CY7C1370KVE33-167AXI uniquely combines ECC, dual-burst-mode flexibility, and JTAG testability in a pin-compatible ZBT-equivalent package-critical for aerospace, telecom, and high-reliability embedded systems.

Availability

CY7C1370KVE33-167AXI is available at Aetrix Electronics and suitable for high-speed network switching, telecom line cards, radar signal processing, and industrial PLC motion control requiring stable component supply across extended product lifecycles.

Supply support for CY7C1370KVE33-167AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C1370KVE33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in networking infrastructure and real-time signal processing equipment.

FAQ

What is the function of the MODE pin on CY7C1370KVE33-167AXI?

The MODE pin is a strap input that selects burst addressing order: pulled HIGH for interleaved burst, LOW for linear burst. It must be set before initialization and held static during operation. Floating defaults to HIGH (interleaved). This allows hardware-level compatibility with different memory controller burst protocols without firmware changes.

Does CY7C1370KVE33-167AXI require external termination resistors on DQ lines?

No external termination is required on DQ lines because the device incorporates programmable output drive strength and on-die impedance control compatible with standard 50 Ω transmission lines. The 2.5 V VDDQ supply and registered I/O architecture inherently support clean signal integrity at 167 MHz without added board-level components.

How does the ZZ sleep mode affect data retention and wake-up latency?

In ZZ mode (pin driven HIGH), core power is reduced and internal clocks halted, but data is retained in the SRAM array as long as VDD remains ≥ 2.7 V. Wake-up latency is one clock cycle after ZZ returns LOW and CEN is asserted - no refresh or reload sequence is needed, preserving deterministic real-time response.

Can CY7C1370KVE33-167AXI operate with mixed VDDQ voltages across DQ groups?

No - all VDDQ pins must be tied to the same 2.5 V supply. The device does not support split I/O voltage domains. DQa–DQd and DQPa–DQPd share a common VDDQ rail; applying differing voltages risks latch-up or undefined I/O behavior per JEDEC TQFP specifications and Cypress AC characterization.