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Infineon Technologies CY7C1371DV33-133AXI

Part No.:
CY7C1371DV33-133AXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1371DV33-133AXI.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,770

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Product details

Overview

CY7C1371DV33-133AXI from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state back-to-back read/write operations in high-speed memory subsystems. It operates at 133 MHz with 6.5 ns clock-to-output delay, supports byte write via four BWx inputs, and uses 3.3 V core and 2.5/3.3 V I/O supplies (VDDQ). Used in network packet buffers and telecom line cards requiring deterministic latency.

For engineers reviewing the CY7C1371DV33-133AXI datasheet, CY7C1371DV33-133AXI pinout, CY7C1371DV33-133AXI application, or CY7C1371DV33-133AXI equivalent, key selection criteria include burst mode control (MODE pin), synchronous self-timed writes, three chip enables for depth expansion, ZZ sleep mode power management, and JTAG boundary-scan testability.

Technical Context

The device implements a synchronous flow-through architecture where all address, control, and data inputs are registered on the rising edge of CLK, qualified by CEN. Internal burst logic-linear or interleaved per MODE strap-uses A[1:0] to generate sequential addresses without external counter logic.

NoBL™ eliminates bus latency by enabling immediate read-after-write transitions: output drivers are synchronously tristated during write data capture, and OE is masked during write cycles to prevent contention. Write operations use on-chip self-timed circuitry, decoupling write completion from clock timing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory density18 Mbit (512K × 36 bits), supporting wide-data-path buffering in packet-switching ASIC interfaces
Max clock frequency133 MHz - enables sustained 133 MT/s throughput with no wait states
Access time (tCDV)6.5 ns - defines minimum clock-to-valid-output delay for timing closure in FPGA-attached memory systems
VDD/VDDQ supply3.3 V core / 2.5 V or 3.3 V I/O - allows interfacing with mixed-voltage SoCs while maintaining signal integrity
Burst capabilityLinear or interleaved 4-word burst - reduces address bus traffic and simplifies controller design
Power-down modeZZ sleep mode with data retention - cuts standby current to ≤70 mA for thermal/power-constrained telecom modules
JTAG supportIEEE 1149.1 compliant - enables in-system test and debug without additional test fixtures

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (13 × 15 × 1.4 mm) packages. Both variants support identical pin functions and timing.

Pin/TerminalCircuit RoleDesign Meaning
A[1:0]Address inputsSampled on CLK rise; feed 2-bit burst counter for linear/interleaved sequences
BWA–BWDByte write enablesActive-low synchronous controls for selective 8-bit writes within 36-bit word
CE1, CE2, CE3Chip enablesSynchronous (CE1/CE3 low, CE2 high) for flexible bank decoding and depth expansion
CLK, CENClock & enableCEN masks CLK; suspends operation without cycle extension or state loss
OEOutput enableAsynchronous control; masked during write data phase to prevent bus contention
ZZSleep inputAsynchronous high-active entry into low-power mode with full data retention
MODEBurst order strapStatic configuration pin: GND = linear, VDD/floating = interleaved burst sequence
DQ[A:D], DQP[A:D]Data I/O & parity36-bit bidirectional data + 4-bit parity; direction controlled by OE and internal write sequencing

Key Features

FeatureDesign Value
No Bus Latency (NoBL™) architectureEliminates dead cycles between consecutive read/write operations, enabling true back-to-back transfers at full 133 MHz
Synchronous self-timed writesRemoves external write-strobe timing constraints; internal logic guarantees write completion before next clock edge
Registered ADV/LD inputControls burst counter advance vs. new address load - critical for burst-mode flexibility in streaming applications
Three independent chip enablesSupports seamless depth expansion across multiple devices without external decode logic
Automatic output tristate during writesPrevents bus contention without software coordination - essential for reliable multi-master memory sharing

Applications

Network Packet BufferTelecom Line Card Memory

Use Scenario: Storing variable-length Ethernet frames in ingress/egress queues of Layer 2/3 switches.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as primary frame buffer with deterministic 6.5 ns access.

Use Value: Enables full-line-rate forwarding at 10 Gbps by sustaining back-to-back reads/writes without pipeline stalls.

Use Scenario: Holding ATM cell headers and payload fragments in OC-192 SONET interface modules.

IC Role / Device Role / Timing Role: Synchronous burst SRAM providing 36-bit-wide data path aligned to cell-based processing clocks.

Use Value: Reduces external address generation logic via on-chip burst counter, lowering FPGA resource usage.

Radar Signal Processing BufferIndustrial PLC Data Log

Use Scenario: Capturing high-speed ADC samples from phased-array radar receivers before FFT computation.

IC Role / Device Role / Timing Role: Flow-through SRAM serving as ping-pong buffer between sampling and processing engines.

Use Value: ZZ sleep mode cuts idle power by >60% during inter-pulse intervals while preserving captured data.

Use Scenario: Logging sensor timestamps and analog values in real-time control systems with deterministic jitter limits.

IC Role / Device Role / Timing Role: Deterministic-access memory ensuring sub-microsecond timestamp resolution under worst-case interrupt load.

Use Value: Byte-write capability allows efficient storage of mixed-size data (e.g., 16-bit counters + 8-bit status flags) without read-modify-write overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72V2115L133PFISame density (512K × 36), 133 MHz, but uses QDR-II+ architecture with separate read/write portsRequires dual-port controller logic; not pin-compatible; higher peak bandwidth but less flexible burst controlSelect when system demands simultaneous read/write concurrency over strict pin compatibility
ISSI IS61WV102436BLL-133TQLIFunctionally identical NoBL™ architecture, same pinout, but rated for industrial temp only (−40°C to +85°C vs. −40°C to +105°C)Lacks extended temperature grade; no ZZ sleep mode; lower max operating current (180 mA vs. 210 mA)Choose for cost-sensitive industrial designs where extended temp and ultra-low standby are non-critical

Compared with IDT72V2115L133PFI and IS61WV102436BLL-133TQLI, the CY7C1371DV33-133AXI uniquely combines extended temperature operation, ZZ sleep mode, and JTAG testability in a pin-compatible NoBL™ package-making it optimal for telecom infrastructure and defense-grade embedded systems requiring field reliability and debug access.

Availability

CY7C1371DV33-133AXI is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, radar signal processing buffers, and industrial PLC data log applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1371DV33-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in programmable system-on-chip (PSoC), memory, and USB solutions for embedded systems.

The CY7C1371DV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking, telecommunications, and real-time signal processing equipment.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin is a static strap that selects burst order: tied to GND for linear burst sequence, or to VDD/floating for interleaved burst. It is sampled only at power-up or reset; reconfiguration requires cycling VDD. Incorrect strapping causes invalid burst addressing and data corruption during burst reads/writes.

How does the ZZ sleep mode interact with data retention and wake-up timing?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode with full data retention and standby current ≤70 mA. Wake-up occurs synchronously on the first valid CLK edge after ZZ returns LOW, with no additional latency beyond standard access time (6.5 ns). The internal state-including burst counter and register contents-is preserved.

Can CE2 be used as an active-low enable like CE1 and CE3?

No - CE2 is defined as active HIGH per the datasheet and pin definition table. Using it as active LOW violates timing and functional specifications. Correct operation requires CE1 and CE3 asserted LOW while CE2 is asserted HIGH; mixing polarities causes undefined chip select behavior and potential bus contention.

Is the JTAG interface enabled by default, and can it be disabled?

Yes, IEEE 1149.1 JTAG is enabled by default and cannot be permanently disabled. However, the TAP controller can be held in Test-Logic-Reset state via TMS/TCK sequencing, effectively disabling scan operations. Boundary-scan functionality remains fully accessible for production testing and field diagnostics without firmware intervention.

CY7C1371DV33-133AXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1371DV33-133AXI FAQ

1.How can I place an order for CY7C1371DV33-133AXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1371DV33-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1371DV33-133AXI reliable?

The price and inventory of CY7C1371DV33-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1371DV33-133AXI is usually 5 days.

3.What payment methods are accepted for CY7C1371DV33-133AXI?

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CY7C1371DV33-133AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1371DV33-133AXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1371DV33-133AXI?

For technical support, including CY7C1371DV33-133AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1371DV33-133AXI requirements.

6.How does Aetrix verify that CY7C1371DV33-133AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1371DV33-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1371DV33-133AXI meets industry standards.

7.What is the process for return or replacement of CY7C1371DV33-133AXI?

All CY7C1371DV33-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1371DV33-133AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1371DV33-133AXI part is unused and in its original packaging.

Return procedure for CY7C1371DV33-133AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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