Infineon Technologies CY7C1371KV33-100AXCT

Overview

CY7C1371KV33-100AXCT from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with NoBL™ architecture and on-chip ECC, configured as 512K × 36 or 1M × 18. It supports 100 MHz bus operation (8.5 ns access), delivers zero wait-state back-to-back read/write cycles, and features registered inputs, byte write capability, and three chip enables for depth expansion. Used in high-throughput packet buffering and network switch data planes.

For engineers reviewing the CY7C1371KV33-100AXCT datasheet, CY7C1371KV33-100AXCT pinout, CY7C1371KV33-100AXCT application, or CY7C1371KV33-100AXCT equivalent, key selection criteria include burst order control (linear/interleaved), synchronous self-timed writes, ZZ sleep mode, VDDQ voltage flexibility (2.5 V/3.3 V), and ECC-enabled soft error mitigation in telecom infrastructure.

Technical Context

The device implements a synchronous flow-through architecture where all address, control, and data inputs are registered on the rising edge of CLK, with CEN qualifying clock recognition. Burst addressing is controlled by ADV/LD and MODE pins, supporting linear or interleaved sequences per JEDEC standard.

Write operations use synchronous self-timed circuitry with BWA–BWD and WE; output drivers are synchronously tristated during write data phases to prevent bus contention. ECC encoding/decoding occurs on-chip, correcting single-bit errors and detecting double-bit errors without external logic.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm), JEDEC-standard Pb-free, with exposed pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with CY7C1371KV33-100AXCT, AS7C331025B-10JIN omits ECC and requires external error handling, while IS61WV102436BLL-10MLI lacks configurable burst order and ZZ sleep-making the Cypress device uniquely suited for ECC-dependent, power-aware, and burst-flexible applications.

Availability

CY7C1371KV33-100AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and radar signal processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1371KV33-100AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in networking and real-time signal processing systems.

FAQ

What is the function of the MODE pin on CY7C1371KV33-100AXCT?

The MODE pin selects burst addressing sequence: tied to GND for linear burst order, or to VDD/floating for interleaved burst order per JEDEC JESD8-8. This setting is sampled at power-up and remains static during operation unless reconfigured externally. It directly affects how consecutive addresses increment during burst reads/writes and must match the host controller's burst protocol.

Does CY7C1371KV33-100AXCT require an external clock buffer for 100 MHz operation?

No external clock buffer is required. The device accepts a clean, single-ended CMOS-level clock directly at the CLK pin, with setup/hold timing referenced to the rising edge. Input register synchronization and internal clock qualification via CEN ensure robust operation at 100 MHz without added buffering, provided PCB layout follows controlled-impedance routing and proper decoupling near VDD/VDDQ pins.

How does the ZZ sleep mode interact with chip enable signals?

ZZ is asynchronous and overrides CE states: when ZZ = HIGH, the device enters sleep regardless of CE1/CE2/CE3 status, reducing ICC to ≤ 50 µA while preserving data. CE signals remain functional upon wake-up (ZZ = LOW), but the device requires one full clock cycle after ZZ deassertion before accepting new commands. CE deselection alone does not achieve equivalent power savings.

Can CY7C1371KV33-100AXCT operate with VDD = 3.3 V and VDDQ = 2.5 V simultaneously?

Yes - VDD (core) and VDDQ (I/O) are independently powered. The device supports VDD = 3.3 V ± 0.3 V and VDDQ = 2.5 V ± 0.2 V concurrently, enabling direct interfacing with 2.5 V FPGAs or ASICs while maintaining 3.3 V core logic integrity. This dual-supply capability is validated in the DC characteristics table and requires separate decoupling for each rail.