Infineon Technologies CY7C1371KV33-133AXCT
- Part No.:
- CY7C1371KV33-133AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1371KV33-133AXCT.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:4,154
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1371KV33-133AXCT from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with NoBL™ architecture and on-chip ECC, configured as 512K × 36 or 1M × 18. It supports true back-to-back read/write operations at 133 MHz with zero wait states, 6.5 ns clock-to-output delay, and 3.3 V/2.5 V I/O (VDDQ). Used in high-throughput packet buffering and network switching ASIC interfaces.
For engineers reviewing the CY7C1371KV33-133AXCT datasheet, CY7C1371KV33-133AXCT pinout, CY7C1371KV33-133AXCT application, or CY7C1371KV33-133AXCT equivalent, key selection criteria include burst order control (linear/interleaved), synchronous byte write capability (BWA–BWD), three chip enables for depth expansion, and ZZ sleep mode for low-power standby.
Technical Context
This SRAM implements a synchronous, clocked interface with registered address, data, and control inputs sampled on the rising edge of CLK, qualified by CEN. The NoBL™ architecture eliminates bus latency by enabling consecutive read/write cycles without dead cycles - data transfers occur on every clock edge.
It integrates on-chip ECC encoding/decoding to reduce soft error rate, supports linear or interleaved burst orders via MODE pin strapping, and uses internal self-timed output buffer control to eliminate external OE timing constraints. Synchronous writes are controlled by WE and four byte-write enables (BWA–BWD), while asynchronous OE provides tristate control independent of clock timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 or 1M × 18 configuration) |
| Max Clock Frequency | 133 MHz - enables zero-wait-state operation in high-speed bus systems |
| Access Time (tAC) | 6.5 ns - defines minimum clock-to-valid-output delay for timing budgeting |
| I/O Voltage Support | 3.3 V / 2.5 V (VDDQ) - allows interoperability with mixed-voltage system buses |
| ECC Capability | On-chip single-bit error correction / double-bit error detection - reduces SER in neutron-rich environments |
| Burst Order Control | MODE pin strapping selects linear or interleaved addressing - matches CPU or ASIC burst protocol requirements |
| Power-Down Mode | ZZ pin activates non-time-critical sleep with data retention - cuts standby current significantly |
Pinout & Package
Package: 100-pin JEDEC-standard Pb-free TQFP (14 × 20 × 1.4 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | Synchronous address bus; A[1:0] feed internal 2-bit burst counter |
| BWA–BWD | Byte Write Enable | Active-low synchronous signals controlling 4×9-bit write granularity in ×36 mode |
| CLK / CEN | Clock & Enable | Rising-edge-triggered clock qualified by active-low CEN; suspends clock recognition when deasserted |
| CE1/CE3 / CE2 | Chip Enable | Three synchronous enables (CE1/CE3 active-low, CE2 active-high) for bank selection and depth expansion |
| DQ[0:35] / DQP[A:D] | Data I/O & Parity | 36-bit bidirectional data bus + 4-bit parity; direction controlled by OE and automatic write tristate logic |
| OE / ZZ / MODE | Control Inputs | Asynchronous OE enables output drivers; ZZ enters low-power sleep; MODE selects burst order (GND = linear, VDD = interleaved) |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency (NoBL™) Architecture | Enables unlimited true back-to-back read/write cycles with no dead cycles - critical for packet-forwarding throughput |
| Synchronous Self-Timed Writes | Eliminates external write pulse timing constraints; internal logic manages write completion within one clock cycle |
| Registered Inputs with Clock Enable | All control/address/data inputs registered on CLK rising edge; CEN extends previous cycle without clock gating side effects |
| Three Chip Enables with Mixed Polarity | CE1/CE3 (active-low) and CE2 (active-high) allow flexible decoding for multi-bank memory subsystems |
| Automatic Output Tristate During Write | Prevents bus contention without external logic - outputs disable synchronously during data portion of write sequence |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packets in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as primary packet buffer between MAC and switch fabric. Use Value: 133 MHz zero-wait-state operation and NoBL™ architecture sustain >2 Gbps sustained throughput under mixed read/write loads. | Use Scenario: Buffering voice and data frames in carrier-grade DSLAM or OLT line cards. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with ATM or GPON framer ASICs requiring interleaved burst support. Use Value: MODE-strapped interleaved burst order matches framer DMA engine addressing, reducing address setup overhead by 30%. |
| Radar Signal Processing Cache | Industrial PLC Data Logging |
Use Scenario: Temporary storage of digitized RF samples before FFT processing in phased-array radar systems. IC Role / Device Role / Timing Role: ECC-protected SRAM holding time-critical intermediate results where soft errors could corrupt beamforming calculations. Use Value: On-chip ECC reduces uncorrectable bit errors by 10⁴× compared to standard SRAM - meets DO-254 airborne reliability targets. | Use Scenario: High-integrity logging of sensor events and control state transitions in safety-critical PLCs. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM used for cyclic data capture with deterministic access timing and power-fail write protection. Use Value: ZZ sleep mode reduces standby current to <50 µA while preserving data - extends battery backup runtime by 4× over non-sleep alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C361024B-133BIN | No on-chip ECC; 100-pin TQFP but lacks ZZ sleep and MODE-selectable burst order | Suitable for cost-sensitive telecom buffers where SER immunity is not required | Select when ECC and low-power sleep are unnecessary and BOM simplification is prioritized |
| IS61WV102432BLL-133TQLI | Supports 133 MHz but uses pipeline burst (not flow-through); no byte-write granularity (only full-word) | Better for CPU cache-like applications with predictable sequential access patterns | Choose only if system design accommodates pipeline latency and does not require per-byte write control |
Compared with AS7C361024B-133BIN and IS61WV102432BLL-133TQLI, the CY7C1371KV33-133AXCT uniquely delivers ECC + NoBL™ + configurable burst order + synchronous byte write in a single 100-pin package - essential for radiation-aware, latency-constrained networking systems.
Availability
CY7C1371KV33-133AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, radar signal processing cache, and industrial PLC data logging requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1371KV33-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.
The CY7C1371KV33 series belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in networking ASIC and FPGA co-processing subsystems.
FAQ
What is the function of the MODE pin on CY7C1371KV33-133AXCT?
The MODE pin is a static strap input that determines burst addressing sequence: tied to GND it configures linear burst order (0,1,2,3…), while tied to VDD or left floating selects interleaved burst (0,2,4,6…,1,3,5,7…). This setting is latched at power-up and cannot be changed dynamically during operation.
Does CY7C1371KV33-133AXCT support asynchronous reads?
No - all accesses are strictly synchronous to the rising edge of CLK. Even OE is asynchronous for tristate control, but data output timing remains clock-aligned with tAC = 6.5 ns. There is no asynchronous read mode; the device requires continuous clocking for valid output generation.
How does the ZZ pin affect power consumption and data retention?
When ZZ is driven HIGH, the device enters a non-time-critical sleep mode with core clocks gated and I/O drivers disabled, reducing ICC to ≤5 mA (typical). Data integrity is fully preserved; no refresh or reinitialization is needed upon wake-up. The internal pull-down ensures safe default LOW state if left unconnected.
Can CY7C1371KV33-133AXCT operate with 2.5 V VDDQ while using 3.3 V VDD?
Yes - VDD (core) must be 3.3 V ±0.3 V, while VDDQ (I/O) is independently configurable for 3.3 V or 2.5 V operation. This dual-supply flexibility allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, provided VDDQ stability and decoupling meet datasheet AC specifications.
CY7C1371KV33-133AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1371KV33-133AXCT FAQ
1.How can I place an order for CY7C1371KV33-133AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1371KV33-133AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1371KV33-133AXCT reliable?
The price and inventory of CY7C1371KV33-133AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1371KV33-133AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1371KV33-133AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1371KV33-133AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1371KV33-133AXCT?
CY7C1371KV33-133AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1371KV33-133AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1371KV33-133AXCT?
For technical support, including CY7C1371KV33-133AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1371KV33-133AXCT requirements.
6.How does Aetrix verify that CY7C1371KV33-133AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1371KV33-133AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1371KV33-133AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1371KV33-133AXCT?
All CY7C1371KV33-133AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1371KV33-133AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1371KV33-133AXCT part is unused and in its original packaging.
Return procedure for CY7C1371KV33-133AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1371KV33-133AXCT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

