Infineon Technologies CY7C1371KVE33-100AXI

Overview

CY7C1371KVE33-100AXI from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM (512K × 36 or 1M × 18) with NoBL™ architecture and on-chip ECC, designed for high-throughput memory buffering in networking and telecom data paths. It supports 100 MHz zero-wait-state operation, delivers 6.5 ns clock-to-output delay, and features registered inputs, byte-write capability, and three chip enables for depth expansion.

For engineers reviewing the CY7C1371KVE33-100AXI datasheet, CY7C1371KVE33-100AXI pinout, CY7C1371KVE33-100AXI application, or CY7C1371KVE33-100AXI equivalent, key selection criteria include burst order configuration (linear/interleaved), VDDQ voltage tolerance (2.5 V/3.3 V), ZZ sleep mode behavior, and ECC correction coverage for soft error mitigation in mission-critical systems.

Technical Context

This SRAM implements a synchronous, clocked interface with all address, control, and data inputs registered on the rising edge of CLK. Its NoBL™ architecture eliminates bus latency by enabling true back-to-back read/write cycles without dead cycles - data transfers occur on every clock edge.

The device integrates on-chip ECC encoding/decoding for single-bit error correction and double-bit error detection, uses internal self-timed write circuitry, and supports both linear and interleaved burst orders via the MODE strap pin. Output drivers are synchronously tristated during write data phases to prevent bus contention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm, JEDEC-standard Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with AS7C331025B-100BIN and IS61WV102432BLL-100BLI, CY7C1371KVE33-100AXI uniquely combines NoBL™ zero-latency operation, integrated SEC-DED ECC, and flexible burst ordering - making it optimal for telecom infrastructure where both throughput and data integrity are non-negotiable.

Availability

CY7C1371KVE33-100AXI is available at Aetrix Electronics and suitable for high-reliability networking equipment, telecom line cards, and radar signal processing systems requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1371KVE33-100AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.

CY7C1371KVE33-100AXI belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, low-latency memory buffering in packet-switched and time-sensitive signal processing systems.

FAQ

What is the function of the MODE pin on CY7C1371KVE33-100AXI?

The MODE pin selects burst addressing order: tied to GND for linear burst (sequential increment), or to VDD/floating for interleaved burst (bit-swapped increment). This setting is sampled at power-up and remains fixed until reset. It directly determines how the internal burst counter generates successive addresses during burst accesses, aligning with CPU cache or DMA controller expectations.

Does CY7C1371KVE33-100AXI require an external clock buffer for 100 MHz operation?

No external clock buffer is required. The device accepts a clean, single-ended CMOS clock signal directly on the CLK pin, provided setup/hold times (≥1.5 ns) and jitter (<0.15 UI) specifications are met. Input clock conditioning is handled internally via synchronous register sampling, and CEN provides precise clock gating without introducing skew.

How does the ZZ sleep mode interact with ongoing burst operations?

Asserting ZZ HIGH during an active burst sequence completes the current access but places the device in sleep mode immediately afterward. Data integrity is preserved, and no refresh is needed. All outputs go high-impedance, and internal clocks halt. Resuming operation requires deasserting ZZ and waiting one clock cycle before issuing new commands - no initialization sequence is required.

Can CY7C1371KVE33-100AXI operate with VDD = 3.3 V and VDDQ = 2.5 V simultaneously?

Yes. VDD powers the core logic (3.3 V nominal), while VDDQ independently supplies the I/O buffers (2.5 V or 3.3 V). This dual-supply design allows direct interfacing with 2.5 V FPGAs or ASICs while maintaining full 3.3 V core performance. Both supplies must be ramped monotonically during power-up, with VDDQ reaching regulation before or concurrently with VDD.