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Infineon Technologies CY7C1372D-167BGC

Part No.:
CY7C1372D-167BGC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
119-BGA
Datasheet:
AetrixCY7C1372D-167BGC.pdf
Description:
IC SRAM 18MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,119

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Product details

Overview

CY7C1372D-167BGC from Cypress Semiconductor is a 1M × 18 (18-Mbit), 3.3V synchronous pipelined SRAM with NoBL™ architecture, supporting 167 MHz bus operation (3.4 ns access time), fully registered I/O, and byte-write capability. It delivers zero-wait-state back-to-back read/write transitions in high-throughput networking packet buffers and telecom line-card memory subsystems.

For engineers reviewing the CY7C1372D-167BGC datasheet, CY7C1372D-167BGC pinout, CY7C1372D-167BGC application, or CY7C1372D-167BGC equivalent, key selection criteria include synchronous burst order (linear/interleaved via MODE pin), VDDQ voltage flexibility (3.3V/2.5V), JTAG boundary-scan support, and 119-ball BGA package compatibility with legacy ZBT designs.

Technical Context

The CY7C1372D-167BGC implements a fully synchronous, rising-edge-triggered pipeline: all address, control, and data inputs are registered on CLK's rising edge, and all outputs are driven from output registers synchronized to the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write operations without wait states.

Burst addressing is controlled by the ADV/LD pin and configured via the MODE strap pin for linear or interleaved order; write operations use synchronous self-timed circuitry qualified by WE and four byte-write selects (BWa–BWb), while tristate control combines asynchronous OE with automatic output disable during write cycles.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (1M × 18 organization) - supports 18-bit wide data paths in packet forwarding engines and DSP co-processor buffers.
Max Clock Frequency 167 MHz - enables sustained 167 MT/s throughput with deterministic timing for real-time traffic shaping.
Access Time 3.4 ns - defines minimum clock-to-output delay for timing closure in 6-layer PCB layouts with ≤50 ps skew.
VDD / VDDQ 3.3 V core / 3.3 V or 2.5 V I/O - allows direct interfacing with 2.5 V ASICs or FPGAs without level shifters.
Byte Write Pins BWa, BWb - enable independent 9-bit writes to upper/lower half of 18-bit word, reducing bus contention in multi-threaded buffer management.
Power Consumption 275 mA max operating current - sets thermal budget for dense 119-ball BGA placement in fanless telecom modules.
Sleep Mode ZZ pin - reduces standby current to <10 µA, enabling low-power idle states in battery-backed control plane processors.

Pinout & Package

Package: 119-ball fine-pitch BGA (12 mm × 12 mm, 0.8 mm pitch), JEDEC-standard, Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Synchronous Address Input Sampled on rising CLK edge; selects one of 1M addresses; A18–A19 used only in 1M×18 mode.
BWa, BWb Synchronous Byte Write Select Active-low controls write enable for DQa/DQPa (BWA) and DQb/DQPb (BWB); qualified by WE and CEN.
CLK Primary Synchronous Clock Rising-edge-triggered master clock; gated by CEN; drives all input/output registers and burst counter.
CEN Clock Enable Active-low; suspends clock recognition without deselecting device-enables cycle extension for timing margining.
CE1, CE2, CE3 Chip Enable Group Three-input decode (CE1=L, CE2=H, CE3=L) enables bank selection in multi-SRAM memory systems.
OE Asynchronous Output Enable Active-low; overrides synchronous logic to force tristate during debug or bus arbitration; masked during writes.
MODE Burst Order Strap Static input: HIGH = interleaved burst, LOW = linear burst; must be stable before initialization; floating defaults HIGH.
ZZ Deep Sleep Control Active-low entry into ultra-low-power state; disables internal clocks and I/O drivers; exit requires CLK restart.
DQa–DQb, DQPa–DQPb Bidirectional Data I/O 18-bit data + 2-bit parity; direction controlled by OE and internal logic; automatically tristated during write data phase.
TCK/TMS/TDI/TDO JTAG Boundary Scan IEEE 1149.1 compliant; enables in-system test and interconnect verification without physical probe access.

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables true back-to-back read/write operations at full 167 MHz - eliminates pipeline stalls in burst-intensive packet buffering.
Full Input/Output Registration All signals synchronized to CLK rising edge - simplifies timing analysis and eliminates setup/hold violations in high-speed FPGA interfaces.
Synchronous Self-timed Writes On-chip write timing control removes external write-pulse generation - reduces PCB routing complexity and jitter sensitivity.
Flexible I/O Voltage (VDDQ) Supports 3.3 V or 2.5 V operation - allows seamless integration with mixed-voltage SoCs and avoids level-shifter components.
JTAG Boundary Scan (IEEE 1149.1) 119-ball BGA pin integrity verification without X-ray or flying probe - critical for high-reliability telecom board manufacturing.

Applications

Networking Packet Buffer Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with cut-through switching.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for ingress/egress queues with concurrent read/write access.

Use Value: 167 MHz zero-wait-state operation sustains 3 Gbps aggregate throughput across 18-bit data path, matching 10G MAC interface rates.

Use Scenario: Buffering TDM voice channels and control signaling in carrier-grade DSLAM line cards.

IC Role / Device Role / Timing Role: Synchronous burst SRAM serving as frame assembly/disassembly (FAD) memory with deterministic latency.

Use Value: Fully registered I/O and 3.4 ns access ensure sub-10 ns jitter tolerance required for E1/T1 synchronization compliance.

DSP Co-processor Cache Industrial PLC Data Log Buffer

Use Scenario: Offloading FFT and filtering tasks from main CPU in radar signal processing modules.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for coefficient storage and intermediate result buffering.

Use Value: Byte-write capability (BWA/BWB) enables efficient 9-bit-aligned updates to filter taps without full-word overwrites.

Use Scenario: Capturing sensor timestamped events in deterministic industrial automation controllers.

IC Role / Device Role / Timing Role: Nonvolatile-buffered memory holding cyclic process data during brownout conditions.

Use Value: ZZ sleep mode draws <10 µA, extending backup capacitor hold-up time to >200 ms for safe state retention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L16PF 1M × 18, 166 MHz, 3.3 V only (no VDDQ flexibility), no ZZ sleep mode Lacks deep-sleep capability; requires external power gating for ultra-low-power modes Select when JTAG scan is unnecessary and system-level power sequencing already handles standby control.
ISSI IS61WV102418B 1M × 18, 166 MHz, 3.3 V core/I/O, no MODE pin (fixed linear burst), no JTAG Fixed burst order limits interoperability with legacy ZBT-based firmware; no boundary-scan test support Select for cost-sensitive industrial control where burst configuration is static and test coverage is handled externally.

Compared with IDT72V2115L16PF and ISSI IS61WV102418B, the CY7C1372D-167BGC uniquely combines VDDQ voltage flexibility, programmable burst order, and IEEE 1149.1 JTAG - making it optimal for field-upgradable telecom hardware requiring mixed-voltage ASIC interfacing and production testability.

Availability

CY7C1372D-167BGC is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card memory, DSP co-processor caches, and industrial PLC data log buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1372D-167BGC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC, and USB solutions for industrial, automotive, and communications markets.

The CY7C1372D belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in packet-switched infrastructure and real-time signal processing equipment.

FAQ

What is the function of the MODE pin on CY7C1372D-167BGC?

The MODE pin is a static strap input that configures burst addressing order: pulled HIGH (or left floating) selects interleaved burst, while pulled LOW selects linear burst. It must remain stable during device operation and is sampled at power-up or reset. This setting directly affects how ADV/LD increments the internal address counter during burst reads/writes.

Does CY7C1372D-167BGC support 2.5 V I/O operation?

Yes - VDDQ supports either 3.3 V or 2.5 V operation, allowing direct interface with 2.5 V FPGAs or ASICs without level shifters. The core VDD remains fixed at 3.3 V. I/O voltage must be applied before CLK and maintained during all active and standby states per datasheet Section "DC Electrical Characteristics".

How does the ZZ (Sleep) pin reduce power consumption?

Asserting ZZ LOW places the device in deep sleep mode, disabling internal clocks, output drivers, and memory array biasing. This reduces ICC to <10 µA (typical), preserving data while minimizing standby power. Exit requires deasserting ZZ and applying at least one valid CLK cycle before resuming normal operation.

Can CY7C1372D-167BGC be used as a drop-in replacement for ZBT SRAMs?

Yes - it is pin-compatible and functionally equivalent to ZBT devices such as the IDT72V2115, sharing identical pinout, timing behavior, and control protocol. However, CY7C1372D adds enhancements including MODE-selectable burst order, ZZ sleep, and JTAG boundary scan - requiring firmware validation but no PCB redesign.

CY7C1372D-167BGC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
119-BGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.4 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

CY7C1372D-167BGC FAQ

1.How can I place an order for CY7C1372D-167BGC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1372D-167BGC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1372D-167BGC reliable?

The price and inventory of CY7C1372D-167BGC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1372D-167BGC is usually 5 days.

3.What payment methods are accepted for CY7C1372D-167BGC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1372D-167BGC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1372D-167BGC?

CY7C1372D-167BGC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1372D-167BGC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1372D-167BGC?

For technical support, including CY7C1372D-167BGC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1372D-167BGC requirements.

6.How does Aetrix verify that CY7C1372D-167BGC is sourced from the original manufacturer or authorized distributors?

All CY7C1372D-167BGC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1372D-167BGC meets industry standards.

7.What is the process for return or replacement of CY7C1372D-167BGC?

All CY7C1372D-167BGC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1372D-167BGC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1372D-167BGC part is unused and in its original packaging.

Return procedure for CY7C1372D-167BGC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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